AOTF18N65 650V,18A N-Channel MOSFET General Description Product Summary The AOTF18N65 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 750V@150℃ 18A RDS(ON) (at VGS=10V) < 0.39Ω 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOTF18N65L Top View D TO-220F G AOTF18N65 G D S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TC=25°C TC=100°C ID AOTF18N65 650 Units V ±30 V 18* 12* A Pulsed Drain Current C IDM Avalanche Current C IAR 6.3 A Repetitive avalanche energy C EAR 595 mJ 1190 5 50 mJ V/ns W 0.4 -55 to 150 W/ oC °C 300 °C AOTF18N65 65 2.5 Units °C/W °C/W Single pulsed avalanche energy G EAS Peak diode recovery dv/dt dv/dt TC=25°C PD Power Dissipation B Derate above 25oC Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering TL purpose, 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Maximum Junction-to-Ambient A,D RθJA Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev0: Jul 2011 www.aosmd.com 80 Page 1 of 5 AOTF18N65 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 650 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C 750 ID=250µA, VGS=0V 0.7 V V/ oC VDS=650V, VGS=0V 1 VDS=520V, TJ=125°C 10 IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA ±100 2.9 µA 3.5 4.5 nΑ V 0.39 Ω 1 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=9A 0.32 gFS Forward Transconductance VDS=40V, ID=9A 20 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current* 18 A ISM Maximum Body-Diode Pulsed Current 80 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge VGS=10V, VDS=520V, ID=18A Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr Body Diode Reverse Recovery Charge IF=18A,dI/dt=100A/µs,VDS=100V Body Diode Reverse Recovery Time S 0.69 2270 3027 3785 pF 170 271 370 pF 12 22 32 pF 0.7 1.4 2.1 Ω 44 56 68 nC 9 12.4 15 nC 9 19.6 30 nC VGS=10V, VDS=325V, ID=18A, RG=25Ω 54 ns 83 ns 149 ns 71 IF=18A,dI/dt=100A/µs,VDS=100V ns 520 655 790 8 10 12 ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=60mH, IAS=6.3A, VDD=150V, RG=25Ω, Starting TJ=25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0: Jul 2011 www.aosmd.com Page 2 of 5 AOTF18N65 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 40 -55°C VDS=40V 10V 30 6V ID(A) ID (A) 10 20 125°C 5.5V 1 10 VGS=5V 25°C 0 0.1 0 5 10 15 20 25 30 0 VDS (Volts) Fig 1: On-Region Characteristics 0.6 4 6 8 VGS(Volts) Figure 2: Transfer Characteristics 10 Normalized On-Resistance 3 0.5 RDS(ON) (Ω Ω) 2 VGS=10V 0.4 0.3 VGS=10V ID=9A 2.5 2 1.5 1 0.5 0 0.2 0 10 20 30 -100 40 -50 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.2 1.0E+02 40 1.0E+00 IS (A) BVDSS (Normalized) 1.0E+01 1.1 1 125°C 1.0E-01 1.0E-02 25°C 0.9 1.0E-03 0.8 1.0E-04 -100 -50 0 50 100 150 200 TJ (°C) Figure 5:Break Down vs. Junction Temparature Rev0: Jul 2011 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AOTF18N65 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 Ciss VDS=520V ID=18A Capacitance (pF) VGS (Volts) 12 9 6 1000 Coss Crss 100 3 0 10 0 20 40 60 80 Qg (nC) Figure 7: Gate-Charge Characteristics 100 0.1 100 100 20 15 10 10µs RDS(ON) limited 10 ID (Amps) Current rating ID(A) 1 10 VDS (Volts) Figure 8: Capacitance Characteristics 100µs 1ms 1 DC 5 10ms 0.1s 0.1 1s TJ(Max)=150°C TC=25°C 0 0.01 0 25 50 75 100 125 150 TCASE (°C) Figure 9: Current De-rating (Note B) 1 10 100 VDS (Volts) Figure 10: Maximum Forward Biased Safe Operating Area for AOTF18N65 (Note F) 1000 Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=2.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance for AOTF18N65 (Note F) Rev0: Jul 2011 www.aosmd.com Page 4 of 5 AOTF18N65 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev0: Jul 2011 L Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.aosmd.com Page 5 of 5