AOZ8234 Four-line TVS Diode General Description Features The AOZ8234 is a transient voltage suppressor diode array designed to protect data lines from high transient conditions and ESD. This state-of-the-art device utilizes AOS leading edge Trench Vertical Structure [TVS]2 ™ technology for superior clamping performance. z ESD protection for high-speed data lines: This device incorporates four TVS diodes in a single package. Due to the flexibility of the design, the package can be configured as a two channel bidirectional TVS array. During transient conditions, the TVS diodes direct the transient to ground. They may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 (±15 kV air, ±8 kV contact discharge). The AOZ8234 comes in an RoHS compliant DFN package and is rated over a -40 °C to +85 °C ambient temperature range. – Exceeds: IEC 61000-4-2 (ESD) ±18 kV (air), ±18 kV (contact) – Human Body Model (HBM) ±30 kV z Trench Vertical Structure [TVS]2 ™ based technology z z z z z z used to achieve excellent ESD clamping performance Small package saves board space Low insertion loss Protects four unidirectional or two bidirectional I/O lines Low clamping voltage Low operating voltage: 5.0V Green product, Pb-free Applications z Portable handheld devices The very small 1.45 mm x 1.0 mm x 0.55 mm DFN package makes it ideal for applications where PCB space is a premium. The small size and high ESD protection makes it ideal for protecting high speed video and data communication interfaces. z Keypads, data lines z Notebook computers z Digital cameras z Portable GPS z MP3 players Typical Applications Pin Configuration I/O1 CH1 1 6 CH4 VN 2 5 N/C CH2 3 4 CH3 I/O2 I/O3 I/O4 Top View Unidirection Protection of Four Lines I/O1 I/O2 3 2 1 4 5 6 Bidirection Protection of Two Lines Rev. 1.0 July 2011 www.aosmd.com Page 1 of 6 AOZ8234 Ordering Information Part Number Ambient Temperature Range Package Environmental AOZ8234DI -40 °C to +85 °C DFN 1.45 x 1.0 Green Product RoHS Compliant AOS Green Products use reduced levels of Halogens, and are also RoHS compliant. Please visit www.aosmd.com/web/quality/rohs_compliant.jsp for additional information. Absolute Maximum Ratings Exceeding the Absolute Maximum ratings may damage the device. Parameter Rating VP – VN 5V Peak Pulse Current (IPP), tP = 8/20 µs 4A Storage Temperature (TS) -65 °C to +150 °C ESD Rating per IEC61000-4-2, Contact ±18 kV Air(1) ±18 kV Model(2) ±30 kV ESD Rating per IEC61000-4-2, ESD Rating per Human Body (1) Notes: 1. IEC 61000-4-2 discharge with CDischarge = 150 pF, RDischarge = 330 Ω. 2. Human Body Discharge per MIL-STD-883, Method 3015 CDischarge = 100 pF, RDischarge = 1.5 kΩ. Maximum Operating Ratings Parameter Rating Junction Temperature (TJ) -40 °C to +125 °C Electrical Characteristics TA = 25°C unless otherwise specified. Specifications in BOLD indicate a temperature range of -40°C to +85°C. Symbol VRWM VBR Parameter Reverse Working Voltage Conditions Min. Between pin 5 and 2(3) 2(4) Reverse Breakdown Voltage IT = 1 mA, between pins 5 and IR Reverse Leakage Current VRWM = 5 V, between pins 5 and 2 VF Diode Forward Voltage IF = 15 mA VCL Channel Clamp Voltage Positive Transients Negative Transient IPP = 15 A, tp = 100 ns, any I/O pin to Ground Channel Clamp Voltage Positive Transients Negative Transient IPP = 25 A, tp = 100 ns, any I/O pin to Ground Junction Capacitance VR = 0 V, f = 1 MHz, any I/O pin to Ground Cj Typ. Max. Units 5.0 V 6.0 0.70 V 0.85 13.5 0.1 µA 1.0 V 12.0 -10.0 V V 15.0 -18.0 V V 16.0 pF Notes: 3. The working peak reverse voltage, VRWM, should be equal to or greater than the DC or continuous peak operating voltage level. 4. VBR is measured at the pulse test current IT. Rev. 1.0 July 2011 www.aosmd.com Page 2 of 6 AOZ8234 Typical Performance Characteristics Clamping Voltage vs. Peak Pulse Current Clamping Voltage vs. Current 16 20 15 18 Clamping Voltage (V) Clamping Voltage, VCL (V) (tperiod = 100ns, tr = 1ns) 14 13 12 11 10 9 8 16 14 12 10 7 6 (tperiod = 100ns, tr = 1ns) 8 6 4 2 5 10 15 20 25 0 30 5 10 15 20 25 30 Current (A) Peak Pulse Current, IPP (A) Capacitance vs. Reverse Bias 16 Capacitance (pF) 14 12 10 8 6 4 2 0 0 1 2 3 4 5 Reverse Bias (Volts) Rev. 1.0 July 2011 www.aosmd.com Page 3 of 6 AOZ8234 Applications Information Device Connection for Protection of Four Data Lines I/O1 These devices are designed to protect up to four unidirectional data lines. The device is connected as follows. I/O2 1. Unidirectional protection of four I/O lines is achieved by connecting pins 1, 3, 4, and 6 to the data lines. Connect pin 2 to ground. The ground connection should be made directly to the ground plane for best results. The path length is kept as short as possible to reduce the effects of parasitic inductance in the board traces. 1 3 4 1 6 2 5 3 4 6 I/O3 2 Circuit Diagram I/O4 Protection of Four Unidirectional Lines Device Connection for Protection of Two Bidirectional Data Lines I/O1 These devices are designed to protect up to two bidirectional data lines. The device is connected as follows. I/O2 1 3 1. Bidirectional protection of two I/O lines is achieved by connecting pins 1 and 3 to the data lines. Connect pin 4 and 6 to ground. The ground connection should be made directly to the ground plane for best results. The path length is kept as short as possible to reduce the effects of parasitic inductance in the board traces. 4 6 Circuit Diagram 1 6 2 5 3 4 Protection of Two Bidirectional Lines Circuit Board Layout Recommendations for Suppression of ESD Good circuit board layout is critical for the suppression of ESD induced transients. The following guidelines are recommended: z Place the TVS near the input terminals or connectors to restrict transient coupling. z Minimize the path length between the TVS and the protected line. z Minimize all conductive loops including power and ground loops. z The ESD transient return path to ground should be kept as short as possible. z Never run critical signals near board edges. z Use ground planes whenever possible. Rev. 1.0 July 2011 www.aosmd.com Page 4 of 6 AOZ8234 Package Dimensions, DFN 1.45 x 1.0, 6L e D b b1 L E 3 Pin #1 Dot by Marking TOP VIEW 2 1 e BOTTOM VIEW A c A1 Dimensions in millimeters SIDE VIEW RECOMMENDED LAND PATTERN 0.50 0.40 0.20 0.36 Symbols A A1 b b1 c D E e L Min. 0.50 0.00 0.20 Nom. 0.55 — 0.25 0.40 0.152 Ref. 1.40 1.45 0.95 1.00 0.50 BSC 0.33 0.38 Max. 0.60 0.05 0.30 1.50 1.05 0.43 Dimensions in inches Symbols A A1 b b1 c D E e L Min. 0.020 0.000 0.008 Nom. Max. 0.022 0.024 — 0.002 0.010 0.012 0.016 0.006 Ref. 0.055 0.057 0.059 0.037 0.039 0.041 0.020 BSC 0.013 0.015 0.017 1.20 0.24 0.72 0.48 UNIT: mm Rev. 1.0 July 2011 www.aosmd.com Page 5 of 6 AOZ8234 Part Marking AOZ8234DI (DFN 1.45 x 1.0) LWP Assembly Lot & Location Code Part Number Code Week & Year Code This data sheet contains preliminary data; supplementary data may be published at a later date. Alpha & Omega Semiconductor reserves the right to make changes at any time without notice. LIFE SUPPORT POLICY ALPHA & OMEGA SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. Rev. 1.0 July 2011 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.aosmd.com Page 6 of 6