AP02N60I-A-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G ▼ RoHS Compliant & Halogen-Free BVDSS 650V RDS(ON) 8Ω ID 2A S Description The TO-220CFM package is widely preferred for all commercialindustrial applications. The device is suited for switch mode power supplies, AC-DC converters and high current high speed switching circuits. G DS TO-220CFM(I) Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage +30 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V 2 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V 1.26 A 1 IDM Pulsed Drain Current 3.6 A PD@TC=25℃ Total Power Dissipation 22 W 0.176 W/℃ Linear Derating Factor 2 EAS Single Pulse Avalanche Energy 80 mJ IAR Avalanche Current 2 A EAR Repetitive Avalanche Energy 2 mJ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Value Unit Rthj-c Maximum Thermal Resistance, Junction-case 5.7 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 62 ℃/W Data & specifications subject to change without notice 1 201305094 AP02N60I-A-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units 650 - - V BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.6 - V/℃ RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=0.6A - - 8 Ω VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=20V, ID=1A - 0.2 - S IDSS Drain-Source Leakage Current VDS=600V, VGS=0V - - 10 uA Drain-Source Leakage Current (T j=150 C) VDS=480V, VGS=0V - - 100 uA Gate-Source Leakage VGS= +30V, VDS=0V - - +100 nA ID=2A - 14 - nC VGS=0V, ID=1mA o IGSS 3 Qg Total Gate Charge Qgs Gate-Source Charge VDS=480V - 2 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 8.5 - nC VDS=300V - 9.5 - ns 3 td(on) Turn-on Delay Time tr Rise Time ID=2A - 12 - ns td(off) Turn-off Delay Time RG=10Ω,VGS=10V - 21 - ns tf Fall Time RD=150Ω - 9 - ns Ciss Input Capacitance VGS=0V - 155 - pF Coss Output Capacitance VDS=25V - 27 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 14 - pF Min. Typ. - - 2 A - - 3.6 A - - 1.5 V Source-Drain Diode Symbol IS ISM VSD Parameter Test Conditions VD=VG=0V , VS=1.5V Continuous Source Current ( Body Diode ) Pulsed Source Current ( Body Diode ) 1 3 Forward On Voltage Tj=25℃, IS=2A, VGS=0V Max. Units Notes: 1.Pulse width limited by Max. junction temperature. 2.Starting Tj=25oC , VDD=50V , L=40mH , RG=25Ω , IAS=2A. 3.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP02N60I-A-HF 0.9 1.5 10V 6.0V 5.5V ID , Drain Current (A) o T C =150 C 1.0 5.0V 0.5 10V 0.8 ID , Drain Current (A) o T C =25 C 6.0V 0.7 5.5V 0.6 0.5 5.0V 0.4 0.3 0.2 V G =4.5V V G =4.5V 0.1 0.0 0.0 0 5 10 15 20 0 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 10 15 20 Fig 2. Typical Output Characteristics 1.2 3.2 V G =10V I D =0.6A 2.8 2.4 Normalized RDS(ON) 1.1 Normalized BVDSS (V) 5 V DS , Drain-to-Source Voltage (V) 1.0 0.9 2.0 1.6 1.2 0.8 0.4 0.8 0.0 -50 0 50 100 150 -50 o 0 50 100 150 T j , Junction Temperature ( o C ) T j , Junction Temperature ( C) Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature 10 5.0 4.5 4.0 T j =150 o C VGS(th) (V) IS (A) 1 T j =25 o C 3.5 3.0 2.5 0.1 2.0 1.5 0.01 1.0 0.01 0.21 0.41 0.61 0.81 1.01 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.21 -50 0 50 100 150 T j , Junction Temperature ( o C ) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP02N60I-A-HF f=1.0MHz 16 1000 V DS =320V V DS =400V V DS =480V 12 C (pF) VGS , Gate to Source Voltage (V) I D =2A 8 C iss 100 4 C oss C rss 0 10 0 4 8 12 16 20 1 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 1.00 Normalized Thermal Response (Rthjc) 10.00 ID (A) 10us 1ms 10ms 100ms 0.10 o T C =25 C Single Pulse 0.01 Duty factor = 0.5 0.2 0.1 0.1 0.05 PDM 0.02 t T 0.01 Single Pulse Duty Factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 1 10 100 1000 10000 0.00001 0.0001 0.001 V DS ,Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.01 0.1 1 10 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4