AP2762R-A-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
D
▼ Fast Switching Characteristics
▼ Simple Drive Requirement
650V
RDS(ON)
1.4Ω
ID
G
▼ RoHS Compliant
BVDSS
7A
S
Description
AP2762 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications.
G
D
S
TO-262(R)
The TO-262 package is widely preferred for commercial-industrial
applications. The device is suited for switch mode power supplies ,DC-AC
converters and high current high speed switching circuits.
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
650
V
VGS
Gate-Source Voltage
+30
V
ID@TC=25℃
Continuous Drain Current, V GS @ 10V
7
A
24
A
92.6
W
18
mJ
6
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
2
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
Unit
1.35
℃/W
62
℃/W
1
200810023
AP2762R-A-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
Drain-Source Breakdown Voltage
3
Min.
Typ.
Max. Units
VGS=0V, ID=1mA
650
-
-
V
VGS=10V, ID=3A
-
-
1.4
Ω
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=4A
-
3.5
-
S
IDSS
Drain-Source Leakage Current
VDS=480V, VGS=0V
-
-
100
uA
IGSS
Gate-Source Leakage
VGS=+30V
-
-
+100
nA
ID=6A
-
31
50
nC
3
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=200V
-
7
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
13
-
nC
3
td(on)
Turn-on Delay Time
VDD=200V
-
33
-
ns
tr
Rise Time
ID=3A
-
29
-
ns
td(off)
Turn-off Delay Time
RG=50Ω,VGS=10V
-
186
-
ns
tf
Fall Time
RD=67Ω
-
46
-
ns
Ciss
Input Capacitance
VGS=0V
-
1330 2130
pF
Coss
Output Capacitance
VDS=30V
-
100
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
8
-
pF
Min.
Typ.
IS=6A, VGS=0V
-
-
1.5
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
3
3
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=6A, VGS=0V,
-
475
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
6.4
-
uC
Notes:
1.Pulse width limited by Max. junction temperature.
o
2.Starting Tj=25 C , VDD=50V , L=1mH , RG=25Ω
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2762R-A-HF
6
12
T C =150 C
5
8
ID , Drain Current (A)
ID , Drain Current (A)
10
6
V G = 5.0 V
4
10V
8.0V
7.0V
6.0V
o
10V
8.0V
7.0V
6.0V
T C =25 o C
V G = 5 .0 V
4
3
2
1
2
0
0
0
4
8
12
16
20
0
24
4
8
12
16
20
24
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3
1.2
1.1
Normalized RDS(ON)
Normalized BVDSS (V)
I D =3A
V G =10V
1
2
1
0.9
0.8
0
-50
0
50
100
-50
150
o
0
50
100
150
T j , Junction Temperature ( o C )
T j , Junction Temperature ( C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
1.4
10
Normalized VGS(th) (V)
8
6
o
T j = 25 C
IS (A)
T j = 150 o C
4
1.2
1
0.8
2
0.6
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2762R-A-HF
f=1.0MHz
10000
10
1000
C iss
100
C oss
8
I D =6A
V DS =200V
C (pF)
VGS , Gate to Source Voltage (V)
12
6
4
10
C rss
2
1
0
0
10
20
30
1
40
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
33
Fig 8. Typical Capacitance Characteristics
100
100us
1ms
1
10ms
100ms
DC
0.1
T C =25 o C
Single Pulse
0.01
Normalized Thermal Response (Rthjc)
1
10
ID (A)
9
V DS , Drain-to-Source Voltage (V)
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4