AP02N60P
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
D
▼ Fast Switching Characteristics
▼ Simple Drive Requirement
G
▼ RoHS Compliant
BVDSS
600V
RDS(ON)
8Ω
ID
2A
S
Description
The TO-220 package is universally preferred for all commercialindustrial applications. The device is suited for DC-DC, DC-AC
converters for telecom, industrial and consumer environment.
G
D
TO-220
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
+30
V
ID@TC=25℃
Continuous Drain Current, V GS @ 10V
2
A
ID@TC=100℃
Continuous Drain Current, V GS @ 10V
1.26
A
6
A
39
W
0.31
W/℃
130
mJ
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
Linear Derating Factor
2
EAS
Single Pulse Avalanche Energy
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
3.2
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
℃/W
Data & specifications subject to change without notice
1
201211203
AP02N60P
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
600
-
-
V
-
0.6
-
V/℃
VGS=10V, ID=1A
-
-
8
Ω
V
VGS=0V, ID=250uA
Max. Units
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
gfs
Forward Transconductance
VDS=10V, ID=1A
-
0.2
-
S
IDSS
Drain-Source Leakage Current
3
VDS=600V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (T j=125 C) VDS=480V, VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS=+30V, VDS=0V
-
-
+100
nA
ID=2A
-
14
20
nC
o
IGSS
3
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=480V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
8.5
-
nC
3
td(on)
Turn-on Delay Time
VDD=300V
-
9.5
-
ns
tr
Rise Time
ID=2A
-
12
-
ns
td(off)
Turn-off Delay Time
RG=10Ω
-
21
-
ns
tf
Fall Time
VGS=10V
-
9
-
ns
Ciss
Input Capacitance
VGS=0V
-
155
240
pF
Coss
Output Capacitance
VDS=25V
-
27
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
14
-
pF
Min.
Typ.
-
-
2
A
-
-
6
A
-
-
1.5
V
Source-Drain Diode
Symbol
IS
ISM
VSD
Parameter
Test Conditions
Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.5V
Pulsed Source Current ( Body Diode )
Forward On Voltage
3
1
Tj=25℃, IS=2A, VGS=0V
Max. Units
Notes:
1.Pulse width limited by max. junction temperature.
o
2.Starting Tj=25 C , VDD=50V , L=50mH , RG=25Ω , IAS=1.6A.
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP02N60P
0.9
1.5
10V
6.0V
5.5V
ID , Drain Current (A)
T C =150 C
1
5.0V
0.5
10V
6.0V
5.5V
o
ID , Drain Current (A)
o
T C =25 C
0.6
5.0V
0.3
V G = 4.5 V
V G = 4.5 V
0
0
0
5
10
15
20
0
5
V DS , Drain-to-Source Voltage (V)
10
15
20
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3
1.2
I D =1A
V G =10V
Normalized RDS(ON)
Normalized BVDSS (V)
1.1
1
2
1
0.9
0
0.8
-50
0
50
100
-50
150
0
50
100
150
T j , Junction Temperature ( o C )
o
T j , Junction Temperature ( C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
100
5
VGS(th) (V)
4
IS (A)
10
T j = 150 o C
o
T j = 25 C
3
1
2
1
0.1
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP02N60P
f=1.0MHz
16
1000
VGS , Gate to Source Voltage (V)
I D =2A
12
8
C (pF)
V DS =320V
V DS =400V
V DS =480V
C iss
100
4
C oss
C rss
0
10
0
4
8
12
16
20
1
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Operation in this area
limited by RDS(ON)
Normalized Thermal Response (Rthjc)
10
1ms
10ms
ID (A)
1
100ms
1s
DC
0.1
o
T c =25 C
Single Pulse
0.01
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
0.01
1
10
100
1000
10000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4