AP02N90H/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Fast Switching Characteristics
BVDSS
RDS(ON)
ID
D
▼ RoHS Compliant & Halogen-Free
900V
7.2Ω
1.9A
G
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G D
The TO-252 package is widely preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts.
The through-hole version (AP02N90J) is available for low-profile
applications.
S
TO-252(H)
G
D S
TO-251(J)
Rating
Units
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
900
V
VGS
Gate-Source Voltage
+30
V
ID@TC=25℃
Continuous Drain Current, V GS @ 10V
1.9
A
ID@TC=100℃
Continuous Drain Current, V GS @ 10V
1.2
A
6
A
62.5
W
0.5
W/℃
2
W
18
mJ
1.9
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
Linear Derating Factor
PD@TA=25℃
Total Power Dissipation
4
2
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Parameter
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
4
Value
Units
2
℃/W
62.5
℃/W
110
℃/W
1
201008115
AP02N90H/J-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Typ.
Max. Units
900
-
0.8
-
V
V/℃
ΔBVDSS/ΔTj
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=0.85A
-
-
7.2
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=1.9A
-
2
-
S
IDSS
Drain-Source Leakage Current
BVDSS
Drain-Source Breakdown Voltage
Min.
VDS=900V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (T j=125 C) VDS=720V, VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS=+30V, VDS=0V
-
-
+100
nA
ID=1.9A
-
12
20
nC
o
IGSS
3
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=540V
-
2.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
4.7
-
nC
3
td(on)
Turn-on Delay Time
VDD=450V
-
10
-
ns
tr
Rise Time
ID=1.9A
-
5
-
ns
td(off)
Turn-off Delay Time
RG=10Ω,VGS=10V
-
18
-
ns
tf
Fall Time
RD=236Ω
-
9
-
ns
Ciss
Input Capacitance
VGS=0V
-
630
1000
pF
Coss
Output Capacitance
VDS=25V
-
40
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
4
-
pF
Min.
Typ.
IS=1.9A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
3
3
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=1.9A, VGS=0V,
-
360
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
1.8
-
µC
Notes:
1.Pulse width limited by Max. junction temperature.
o
2.Starting Tj=25 C , VDD=50V , L=10mH , RG=25Ω , IAS=1.9A.
3.Pulse test
2
4.Surface mounted on 1 in copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP02N90H/J-HF
2.0
1.25
10V
8.0V
6.0V
5.0V
T C =25 C
ID , Drain Current (A)
1.6
10V
8.0V
6.0V
5.0V
V G =4.5V
o
T C =150 C
1.00
ID , Drain Current (A)
o
1.2
0.8
V G =4.5V
0.75
0.50
0.25
0.4
0.00
0.0
0
3
6
9
12
15
18
0
V DS , Drain-to-Source Voltage (V)
3
6
9
12
15
18
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.8
1.2
I D = 0.85 A
V G =10V
2.4
Normalized RDS(ON)
Normalized BVDSS (V)
1.1
1.0
2.0
1.6
1.2
0.8
0.9
0.4
0.0
0.8
-50
0
50
100
150
-50
0
50
100
150
T j , Junction Temperature ( o C )
o
Junction Temperature ( C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
2.0
1.6
IS(A)
T j =150 o C
Normalized VGS(th) (V)
1.5
T j =25 o C
1.0
0.5
0.0
1.2
0.8
0.4
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j ,Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP02N90H/J-HF
f=1.0MHz
12
1000
C iss
I D = 1.9 A
V DS = 180 V
V DS = 360 V
V DS = 540 V
VGS , Gate to Source Voltage (V)
10
100
C (pF)
8
6
4
C oss
10
C rss
2
1
0
0
4
8
12
1
16
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
10.00
Operation in this
area limited by
RDS(ON)
Normalized Thermal Response (Rthjc)
1
100us
ID (A)
1.00
1ms
10ms
100ms
DC
0.10
T C =25 o C
Single Pulse
DUTY=0.
0.2
0.1
0.1
0.05
PDM
t
T
0.02
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
0.01
SINGLE
0.01
0.01
1
10
100
1000
10000
0.00001
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4