AP9990GR-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower On-resistance
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
G
BVDSS
60V
RDS(ON)
6mΩ
ID
100A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
G
D
The TO-262 package is widely preferred for commercial-industrial
power applications and suited for low voltage applications such as
DC/DC converters.
S
TO-262(R)
Absolute Maximum Ratings
Rating
Units
VDS
Symbol
Drain-Source Voltage
Parameter
60
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Continuous Drain Current (Chip)
100
A
80
A
70
A
300
A
ID@TC=25℃
Continuous Drain Current, V GS @ 10V
ID@TC=100℃
Continuous Drain Current, V GS @ 10V
3
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
125
W
PD@TA=25℃
Total Power Dissipation
2.42
W
TSTG
Storage Temperature Range
-55 to 175
℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
1.2
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
℃/W
Data and specifications subject to change without notice
1
201210021
AP9990GR-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
60
-
-
V
VGS=10V, ID=40A
-
-
6
mΩ
BVDSS
Drain-Source Breakdown Voltage
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
5
V
gfs
Forward Transconductance
VDS=10V, ID=40A
-
55
-
S
IDSS
Drain-Source Leakage Current
VDS=48V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=40A
-
60
96
nC
Qgs
Gate-Source Charge
VDS=48V
-
14
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
30
-
nC
td(on)
Turn-on Delay Time
VDS=30V
-
14
-
ns
tr
Rise Time
ID=40A
-
76
-
ns
td(off)
Turn-off Delay Time
RG=1Ω
-
25
-
ns
tf
Fall Time
VGS=10V
-
12
-
ns
Ciss
Input Capacitance
VGS=0V
-
2320 3700
pF
Coss
Output Capacitance
VDS=25V
-
450
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
280
-
pF
Min.
Typ.
IS=40A, VGS=0V
-
-
1.3
V
2
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=10A, VGS=0V,
-
41
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
58
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 80A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9990GR-HF
300
160
ID , Drain Current (A)
250
ID , Drain Current (A)
T C =175 o C
10V
9.0V
8.0V
o
T C =25 C
200
7.0V
150
V G = 6.0V
100
10V
9.0V
8.0V
7.0V
120
V G =6.0V
80
40
50
0
0
0.0
4.0
8.0
12.0
16.0
20.0
24.0
0.0
4.0
V DS , Drain-to-Source Voltage (V)
8.0
12.0
16.0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
2.4
I D =40A
V G =10V
Normalized RDS(ON)
Normalized BVDSS (V)
2.0
1.1
1
1.6
1.2
0.9
0.8
0.4
0.8
-50
0
50
100
150
-50
200
0
Fig 3. Normalized BVDSS v.s. Junction
100
150
200
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Temperature
40
1.6
30
1.2
o
T j =175 C
Normalized VGS(th) (V)
IS(A)
50
T j , Junction Temperature ( o C)
T j , Junction Temperature ( o C)
T j =25 o C
20
10
0.8
0.4
0
0.0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
200
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9990GR-HF
f=1.0MHz
12
4000
I D =40A
3000
V DS =30V
V DS =36V
V DS =48V
8
C (pF)
VGS , Gate to Source Voltage (V)
10
6
C iss
2000
4
1000
2
C oss
C rss
0
0
0
20
40
60
80
1
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
1000
Normalized Thermal Response (Rthjc)
Duty factor = 0.5
Operation in this area
limited by RDS(ON)
100
ID (A)
100us
1ms
10
10ms
100ms
DC
T C =25 o C
Single Pulse
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1
0.1
1
10
100
1000
0.00001
0.0001
V DS ,Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4