AP99T03GP-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Ultra-low On-resistance ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free BVDSS 30V RDS(ON) 2.5mΩ ID G 200A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D TO-220(P) S The TO-220 package is widly preferred for commercial-industrial power applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Parameter Symbol Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage +20 V ID@TC=25℃ Continuous Drain Current (Chip) ID@TC=25℃ ID@TC=100℃ 200 A 3 120 A 3 120 A 800 A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation 156 W PD@TA=25℃ Total Power Dissipation 2 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value Units 0.8 ℃/W 62 ℃/W 1 201006211 AP99T03GP-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Min. Typ. Max. Units VGS=0V, ID=250uA 30 - - V VGS=10V, ID=40A - - 2.5 mΩ VGS=4.5V, ID=30A - - 4 mΩ 0.8 - 2.5 V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA gfs Forward Transconductance VDS=10V, ID=30A - 110 - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA ID=30A - 80 128 nC 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=24V - 11.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 55 - nC VDS=15V - 16 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=30A - 60 - ns td(off) Turn-off Delay Time RG=3.3Ω - 55 - ns tf Fall Time VGS=10V - 20 - ns Ciss Input Capacitance VGS=0V - 5000 8000 pF Coss Output Capacitance VDS=25V - 1060 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 850 - pF Rg Gate Resistance f=1.0MHz - 1.1 - Ω Min. Typ. IS=40A, VGS=0V - - 1.2 V IS=10A, VGS=0V - 55 - ns dI/dt=100A/µs - 80 - nC Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Max. Units Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Package limitation current is 120A. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP99T03GP-HF 320 200 ID , Drain Current (A) 240 160 10V 7.0V 6.0V 5.0V V G = 4.0V T C = 150 o C 160 ID , Drain Current (A) 10V 7.0V 6.0V 5.0V V G = 4.0V o T C = 25 C 120 80 80 40 0 0 0 2 4 6 0 8 Fig 1. Typical Output Characteristics 2 3 4 Fig 2. Typical Output Characteristics 3 2.0 I D =30A I D =40A V G =10V T C =25 o C 1.6 Normalized RDS(ON) 3 RDS(ON) (mΩ) 1 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) 2 2 1.2 0.8 2 0.4 2 4 6 8 10 -50 0 50 100 150 T j , Junction Temperature ( o C) V GS Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 40 1.6 Normalized VGS(th) (V) I D =1mA 30 T j =25 o C IS(A) T j =150 o C 20 10 1.2 0.8 0.4 0 0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j ,Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP99T03GP-HF f=1.0MHz 10 8000 V DS = 15 V V DS = 18 V V DS = 24 V 8 6000 C iss C (pF) VGS , Gate to Source Voltage (V) I D = 30 A 6 4000 4 2000 2 C oss C rss 0 0 0 40 80 120 1 160 5 9 Q G , Total Gate Charge (nC) 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 1 100 Normalized Thermal Response (Rthjc) Operation in this area limited by RDS(ON) ID (A) 100us 1ms 10ms 100ms DC 10 T C =25 o C Single Pulse Duty factor=0.5 0.2 0.1 0.1 0.05 PDM 0.02 t 0.01 T Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 1 0.1 1 10 100 0.00001 0.0001 0.001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.01 0.1 1 10 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4