AP09N20H/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Fast Switching Characteristics
D
▼ RoHS Compliant
BVDSS
RDS(ON)
ID
200V
380mΩ
8.6A
G
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts.
The through-hole version (AP09N20J) is available for low-profile
applications.
G
D S
TO-252(H)
G
D S
TO-251(J)
Rating
Units
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
200
V
VGS
Gate-Source Voltage
+30
V
ID@TC=25℃
Continuous Drain Current, V GS @ 10V
8.6
A
ID@TC=100℃
Continuous Drain Current, V GS @ 10V
5.5
A
36
A
69
W
0.55
W/℃
40
mJ
8.6
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
Linear Derating Factor
2
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Unit
Rthj-c
Maximum Thermal Resistance, Junction-case
1.8
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
℃/W
Data & specifications subject to change without notice
1
200809112
AP09N20H/J-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
ΔBVDSS/ΔTj
VGS=0V, ID=1mA
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
BVDSS
Drain-Source Breakdown Voltage
Min.
Typ.
Max. Units
200
-
0.24
-
V
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=5A
-
-
380
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=5A
-
3.7
-
S
IDSS
Drain-Source Leakage Current
VDS=200V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (T j=150 C) VDS=160V, VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS= +30V
-
-
+100
nA
ID=8.6A
-
23
37
nC
o
IGSS
3
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=160V
-
4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
13
-
nC
3
td(on)
Turn-on Delay Time
VDD=100V
-
12
-
ns
tr
Rise Time
ID=8.6A
-
25
-
ns
td(off)
Turn-off Delay Time
RG=10Ω,VGS=10V
-
36
-
ns
tf
Fall Time
RD=11.6Ω
-
16
-
ns
Ciss
Input Capacitance
VGS=0V
-
500
800
pF
Coss
Output Capacitance
VDS=25V
-
90
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
40
-
pF
Min.
Typ.
IS=8.6A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
Parameter
3
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=8.6A, VGS=0V,
-
225
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
2260
-
nC
Notes:
1.Pulse width limited by safe operating area.
o
2.Starting Tj=25 C , VDD=50V , L=1mH , RG=25Ω , IAS=8.6A.
3.Pulse width <300us , duty cycle <2%.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP09N20H/J-HF
18
10
T C =25 C
10V
8.0V
7.0V
T C =150 o C
8
14
12
ID , Drain Current (A)
ID , Drain Current (A)
10V
8.0V
o
16
7.0V
10
8
6
6
4
5.0V
4
2
5.0V
2
V G =4.0V
V G =4.0V
0
0
0
2
4
6
8
10
12
0
2
4
6
8
10
12
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.8
1.6
I D =5A
V GS =10V
2.4
Normalized RDS(ON)
Normalized BVDSS (V)
1.4
1.2
1
2
1.6
1.2
0.8
0.8
0.4
0.6
0
-50
0
50
100
150
-50
o
0
50
100
150
o
T j , Junction Temperature ( C)
T j , Junction Temperature ( C )
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
5
7
6
4
VGS(th) (V)
IS(A)
5
4
3
T j =150 o C
3
T j =25 o C
2
2
1
1
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP09N20H/J-HF
15
f=1.0MHz
1000
C iss
V DS =100V
V DS =120V
V DS =160V
9
C (pF)
VGS , Gate to Source Voltage (V)
I D =8.6A
12
100
C oss
6
C rss
3
0
10
0
6
12
18
24
30
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
100
100us
10
ID (A)
1ms
10ms
1
100ms
T c =25 o C
Single Pulse
DC
0
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
T
0.02
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-252
D
D1
E2
MIN
NOM
MAX
A2
1.80
2.30
2.80
A3
0.40
0.50
0.60
B1
0.40
0.70
1.00
D
6.00
6.50
7.00
D1
4.80
5.35
5.90
E3
3.50
4.00
4.50
E3
E1
B1
F1
e
Millimeters
SYMBOLS
F
2.20
2.63
3.05
F1
0.50
0.85
1.20
E1
5.10
5.70
6.30
E2
0.50
1.10
1.80
e
--
2.30
--
C
0.35
0.50
0.65
F
e
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
R : 0.127~0.381
A2
A3
(0.1mm
C
Part Marking Information & Packing : TO-252
Part
Package Code
09N20H
LOGO
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
If last "S" is numerical letter : Rohs product
If last "S" is English letter : HF & Rohs product
5
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-251
D
Millimeters
A
SYMBOLS
c1
D1
E2
E1
E
A1
B2
F
B1
c
e
MIN
NOM
MAX
A
2.20
2.30
2.40
A1
0.90
1.20
1.50
B1
0.40
0.60
0.80
B2
0.60
0.85
1.05
c
c1
0.40
0.50
0.60
0.40
0.50
0.60
D
6.40
6.60
6.80
D1
4.80
5.20
5.50
E
6.70
7.00
7.30
E1
5.40
5.60
5.80
E2
1.30
1.50
1.70
e
----
2.30
----
F
7.00
8.30
9.60
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
e
Part Marking Information & Packing : TO-251
Part Number
09N20J
YWWSSS
Package Code
LOGO
Date Code (YWWSSS)
Y ：Last Digit Of The Year
WW ：Week
SSS ：Sequence
If last "S" is numerical letter : Rohs product
If last "S" is English letter : HF & Rohs product
6