AP09T10GK-HF
Preliminary
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower Gate Chage
▼ Fast Switching Characteristic
100V
RDS(ON)
300mΩ
ID
G
▼ RoHS Compliant & Halogen-Free
BVDSS
2.4A
S
D
Description
Advanced
Power
MOSFETs
fromfrom
APEC
provide
thethe
designer with the
The Advanced
Power
MOSFETs
APEC
provide
best
combination
of
fast
switching,
ruggedized
device
design, low ondesigner with the best combination of fast switching,
resistance
and
cost-effectiveness.
ruggedized device design, low on-resistance and cost-effectiveness.
S
D
SOT-223
G
The SOT-223 package is designed for suface mount application, larger
heatsink than SO-8 and SOT package.
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
+20
V
ID@TA=25℃
Continuous Drain Current, V GS @ 10V
2.4
A
ID@TA=70℃
Continuous Drain Current, V GS @ 10V
1.9
A
10
A
2.78
W
IDM
Pulsed Drain Current
1
3
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
3
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Units
45
℃/W
1
20110824pre
AP09T10GK-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
100
-
-
V
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=10V, ID=2A
-
-
300
mΩ
VGS=4.5V, ID=1A
-
-
450
mΩ
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
VDS=10V, ID=2A
-
3
-
S
gfs
Forward Transconductance
IDSS
Drain-Source Leakage Current
VDS=80V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=2A
-
8
-
nC
Qgs
Gate-Source Charge
VDS=80V
-
1.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
2.5
-
nC
td(on)
Turn-on Delay Time
VDS=50V
-
5
-
ns
tr
Rise Time
ID=2A
-
12
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
12
-
ns
tf
Fall Time
VGS=10V
-
3
-
ns
Ciss
Input Capacitance
VGS=0V
-
250
-
pF
Coss
Output Capacitance
VDS=25V
-
50
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
30
-
pF
Min.
Typ.
IS=2A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=2A, VGS=0V,
-
25
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
20
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in 2 copper pad of FR4 board, t <10sec ; 120 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2