AP9585GM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
D
▼ Lower Gate Charge
D
D
G
SO-8
S
S
-80V
RDS(ON)
180mΩ
ID
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
BVDSS
-2.7A
S
Description
D
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters.
G
S
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
-80
V
+20
V
3
-2.7
A
3
-2.1
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
-20
A
PD@TA=25℃
Total Power Dissipation
2.5
W
Linear Derating Factor
0.02
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
50
℃/W
1
201107041
AP9585GM-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-80
-
-
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-10V, ID=-2.7A
-
-
180
mΩ
VGS=-4.5V, ID=-2.5A
-
-
200
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-2.7A
-
5
-
S
IDSS
Drain-Source Leakage Current
VDS=-80V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=70 C) VDS=-64V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=-2.7A
-
18
28
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-64V
-
5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
7
-
nC
VDS=-40V
-
10
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
67
-
ns
tf
Fall Time
RD=40Ω
-
30
-
ns
Ciss
Input Capacitance
VGS=0V
-
1790 2860
pF
Coss
Output Capacitance
VDS=-25V
-
140
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
98
-
pF
Min.
Typ.
IS=-2A, VGS=0V
-
-
-1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=-2.7A, VGS=0V,
-
80
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
320
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9585GM-HF
30
40
-10V
-6.0V
-5.0V
-4.5V
-ID , Drain Current (A)
35
30
-10V
-6.0V
-5.0V
-4.5V
TA=150oC
25
-ID , Drain Current (A)
o
T A = 25 C
25
20
15
V G = -3.0 V
20
15
V G = -3.0 V
10
10
5
5
0
0
0
4
8
12
16
20
0
Fig 1. Typical Output Characteristics
4
6
8
10
12
14
Fig 2. Typical Output Characteristics
150
2.2
2.0
I D = -2.5 A
T A =25 ℃
I D = -2.7 A
V G =-10V
1.8
Normalized RDS(ON)
145
RDS(ON) (mΩ)
2
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
140
135
1.6
1.4
1.2
1.0
0.8
130
0.6
0.4
125
3
4
5
6
7
8
9
10
-50
11
-V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3
6
2.5
2
T j =150 o C
-VGS(th) (V)
-IS(A)
4
T j =25 o C
1.5
1
2
0.5
0
0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9585GM-HF
f=1.0MHz
10000
I D = -2.7A
V DS = -64V
8
C iss
1000
6
C (pF)
-VGS , Gate to Source Voltage (V)
10
C oss
C rss
4
100
2
0
10
0
10
20
30
1
40
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (Rthja)
Duty factor=0.5
10
-ID (A)
100us
1ms
1
10ms
100ms
0.1
1s
T A =25 o C
Single Pulse
DC
0.01
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja=125 oC/W
0.001
0.1
1
10
100
1000
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4