AP1332GEV-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
D
▼ Gate Pateded Diode
▼ Small Package Outline
S
▼ RoHS Compliant & Halogen-Free
SC-75
BVDSS
20V
RDS(ON)
0.9Ω
ID
450mA
G
D
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, low on-resistance and costeffectiveness.
SC-75 with 1.6x1.6mm very small footprint and suited for hand held
applications.
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Unit
20
V
+6
V
3
450
mA
3
360
mA
1
A
0.35
W
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
420
℃/W
1
201204252
AP1332GEV-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
20
-
-
V
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
RDS(ON)
Static Drain-Source On-Resistance2
VGS=4.5V, ID=400mA
-
-
0.9
Ω
VGS=2.5V, ID=300mA
-
-
2
Ω
VGS=1.8V, ID=200mA
-
-
3
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
0.25
-
1
V
gfs
Forward Transconductance
VDS=5V, ID=400mA
-
1.3
-
S
IDSS
Drain-Source Leakage Current
VDS=16V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+6V, VDS=0V
-
-
+30
uA
Qg
Total Gate Charge
ID=400mA
-
1.2
1.9
nC
Qgs
Gate-Source Charge
VDS=10V
-
0.3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
0.3
-
nC
td(on)
Turn-on Delay Time
VDS=10V
-
18
-
ns
tr
Rise Time
ID=400mA
-
34
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
110
-
ns
tf
Fall Time
VGS=5V
-
115
-
ns
Ciss
Input Capacitance
VGS=0V
-
45
72
pF
Coss
Output Capacitance
VDS=10V
-
22
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
12
-
pF
Min.
Typ.
Max.
Unit
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
Test Conditions
IS=300mA, VGS=0V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test.
3.Surface mounted on FR4 board.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP1332GEV-HF
4
3.2
5.0V
4.5V
3.5V
ID , Drain Current (A)
T A =25 C
3
2
2.5V
1
V G = 1.8V
5.0V
4.5V
3.5V
o
T A = 150 C
ID , Drain Current (A)
o
2.4
2.5V
1.6
V G = 1.8V
0.8
0.0
0
0
1
2
3
4
5
0
6
1
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1200
1.8
I D =0.4A
V G =4.5V
I D = 0.2 A
o
T A =25 C
1.6
Normalized RDS(ON)
RDS(ON) (mΩ)
1000
800
600
1.4
1.2
1.0
400
0.8
0.6
200
0
1
2
3
4
5
-50
6
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
2
1.6
1.6
Normalized VGS(th)
IS(A)
I D =250uA
1.2
o
o
T j =150 C
T j =25 C
0.8
0.4
1.2
0.8
0.4
0
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP1332GEV-HF
5
f=1.0MHz
80
4
60
C (pF)
VGS , Gate to Source Voltage (V)
I D =0.4A
V DS =10V
3
C iss
40
2
20
C oss
C rss
1
0
0
0.0
0.4
0.8
1.2
1.6
1
5
9
13
17
21
25
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
10
Normalized Thermal Response (Rthja)
1
1
100us
ID (A)
Operation in this
area limited by
RDS(ON)
1ms
0.1
10ms
100ms
1s
DC
T A =25 o C
Single Pulse
0.01
0.01
0.1
1
10
Duty factor=0.5
0.2
0.1
0.05
0.1
0.02
PDM
0.01
t
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
0.01
0.0001
100
0.001
0.01
V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
4
0.6
V DS =5V
0.5
o
T j =25 C
3
ID , Drain Current (A)
ID , Drain Current (A)
T j =-40 o C
T j =150 o C
2
0.4
0.3
0.2
1
0.1
0
0
0
1
2
3
4
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
5
25
50
75
100
125
150
T A , Ambient Temperature ( o C )
Fig 12. Maximum Continuous Drain Current
v.s. Ambient Temperature
4