AP9922AGEO-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Low On-resistance
G2
S2
S2
D2
▼ Capable of 1.8V Gate Drive
BVDSS
20V
RDS(ON)
18mΩ
G1
S1
▼ Optimal DC/DC Battery Application
TSSOP-8
D1
S1
ID
6A
▼ Halogen Free & RoHS Compliant Product
Description
D1
AP9922A series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
G1
D2
G2
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
20
V
+8
V
Continuous Drain Current
3
6
A
Continuous Drain Current
3
4.8
A
20
A
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
1
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
3
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Unit
125
℃/W
1
201301081
AP9922AGEO-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
20
-
-
V
VGS=4.5V, ID=6A
-
13.4
18
mΩ
VGS=2.5V, ID=4A
-
15.5
21
mΩ
VGS=1.8V, ID=2A
-
18.6
28
mΩ
0.3
0.5
1
V
VGS=0V, ID=250uA
2
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
Max. Units
gfs
Forward Transconductance
VDS=5V, ID=6A
-
28
-
S
IDSS
Drain-Source Leakage Current
VDS=16V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+8V, VDS=0V
-
-
+30
uA
Qg
Total Gate Charge
ID=6A
-
16
26
nC
Qgs
Gate-Source Charge
VDS=10V
-
1.6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4.3
-
nC
td(on)
Turn-on Delay Time
VDS=10V
-
7
-
ns
tr
Rise Time
ID=1A
-
11
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
31
-
ns
tf
Fall Time
VGS=5V
-
6
-
ns
Ciss
Input Capacitance
VGS=0V
-
1070 1710
pF
Coss
Output Capacitance
VDS=10V
-
130
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
115
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.4
2.8
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=1.2A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time
IS=6A, VGS=0V,
-
14
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
4
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board ; 208℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9922AGEO-HF
20
24
5.0V
4.5V
3.5V
2.5V
V G =1.8V
ID , Drain Current (A)
20
16
5.0V
4.5V
3.5V
2.5V
V G =1.8V
o
T A = 150 C
16
ID , Drain Current (A)
T A =25 o C
12
8
12
8
4
4
0
0
0
1
1
2
2
3
0
1
V DS , Drain-to-Source Voltage (V)
3
4
5
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
20
ID=6A
V G = 4.5 V
ID=2A
T A =25 ℃
1.4
Normalized RDS(ON)
RDS(ON) (mΩ)
2
18
1.2
1.0
16
0.8
0.6
14
1
2
3
4
-50
5
0
50
100
150
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
6
I D =250uA
1.5
T j =150 o C
VGS(th)
IS(A)
4
T j =25 o C
1.0
2
0.5
0
0.0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9922AGEO-HF
f=1.0MHz
6
1250
ID=6A
V DS = 10 V
1050
4
C iss
850
C (pF)
VGS , Gate to Source Voltage (V)
5
3
650
2
450
1
250
0
C rss
C oss
50
0
4
8
12
16
20
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
10
Normalized Thermal Response (Rthja)
100
100us
ID (A)
Operation in this area
limited by RDS(ON)
1ms
1
10ms
100ms
0.1
1s
T A =25 o C
Single Pulse
DC
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t
0.01
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja=208℃/W
0.001
0.01
0.01
0.1
1
10
0.0001
100
0.001
0.01
V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
40
8
V DS =5V
T j =25 o C
30
ID , Drain Current (A)
ID , Drain Current (A)
T j =-40 o C
o
T j =150 C
20
10
6
4
2
0
0
0
1
2
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
3
25
50
75
100
125
150
T A , Ambient Temperature ( o C )
Fig 12. Maximum Continuous Drain
Current v.s. Ambient Temperature
4