AP1333GU
RoHS-compliant Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Gate Drive
D
▼ Small Package Outline
▼ Fast Switching Characteristic
BVDSS
-20V
RDS(ON)
800mΩ
ID
-550mA
S
SOT-323 G
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching, low onresistance and cost-effectiveness.
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Unit
-20
V
+12
V
3
-550
mA
3
-440
mA
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
-2.5
A
PD@TA=25℃
Total Power Dissipation
0.35
W
Linear Derating Factor
0.003
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
360
℃/W
1
201105094
AP1333GU
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
-20
-
-
V
BVDSS
Drain-Source Breakdown Voltage
∆BVDSS/∆Tj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
-
-0.01
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=-10V, ID=-550mA
-
-
600
mΩ
VGS=-4.5V, ID=-500mA
-
-
800
mΩ
VGS=-2.5V, ID=-300mA
-
-
1000
mΩ
VGS=0V, ID=-250uA
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-0.5
-
-1.2
V
gfs
Forward Transconductance
VDS=-5V, ID=-500mA
-
1
-
S
IDSS
Drain-Source Leakage Current
VDS=-20V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=70 C) VDS=-16V ,VGS=0V
-
-
-10
uA
Gate-Source Leakage
VGS=+12V, VDS=0V
-
-
+100
nA
ID=-500mA
-
1.7
2.7
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-16V
-
0.3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
0.4
-
nC
VDS=-10V
-
5
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-500mA
-
8
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-5V
-
10
-
ns
tf
Fall Time
RD=20Ω
-
2
-
ns
Ciss
Input Capacitance
VGS=0V
-
66
105.6
pF
Coss
Output Capacitance
VDS=-10V
-
25
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
20
-
pF
Min.
Typ.
Max.
Unit
-
-
-1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
Test Conditions
IS=-300mA, VGS=0V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on FR4 board, t ≦ 10 sec.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP1333GU
2.5
2.5
- 5.0V
- 4.5V
- 3.5V
T A =25 C
-ID , Drain Current (A)
2.0
1.5
2.0
- 2.5V
1.0
V G = - 2.0V
-3.5V
1.5
-2.5V
1.0
V G = - 2.0V
0.5
0.5
0.0
0.0
0.0
0.5
1.0
1.5
2.0
0.0
2.5
-V DS , Drain-to-Source Voltage (V)
0.5
1.0
1.5
2.0
2.5
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
1200
I D = - 0. 5 A
V G = - 4.5V
I D = - 0. 3 A
o
T A =25 C
1.4
Normalized RDS(ON)
1000
RDS(ON) (mΩ)
-5.0V
-4.5V
T A = 150 o C
-ID , Drain Current (A)
o
800
600
400
1.2
1.0
0.8
200
0.6
0
2
4
6
8
10
-50
0
50
100
150
o
-V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.0
2.0
Normalized -VGS(th) (V)
0.8
-IS(A)
0.6
T j =150 o C
T j =25 o C
0.4
1.5
1.0
0.5
0.2
0.0
0.0
0
0.2
0.4
0.6
0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP1333GU
f=1.0MHz
100
8
C iss
I D = -0.5A
V DS = -16V
6
C (pF)
-VGS , Gate to Source Voltage (V)
10
C oss
4
C rss
2
0
10
0
1
2
3
4
1
3
Q G , Total Gate Charge (nC)
5
7
9
11
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
10
1
Operation in this
area limited by
RDS(ON)
100us
-ID (A)
1
Normalized Thermal Response (Rthja)
Duty factor=0.5
1ms
0.1
10ms
100ms
1s
DC
o
T A =25 C
Single Pulse
0.01
0.1
1
10
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Single Pulse
0.01
100
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4