AP2304GN-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Small package outline
D
BVDSS
25V
RDS(ON)
117mΩ
ID
▼ Surface mount package
▼ RoHS Compliant & Halogen-Free
S
SOT-23
Description
2.7A
G
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
25
V
+20
V
3
2.7
A
3
2.2
A
10
A
Continuous Drain Current , VGS @ 10V
Continuous Drain Current , VGS @ 10V
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
1.38
W
Linear Derating Factor
0.01
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
90
℃/W
1
200908315
AP2304GN-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
25
-
-
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=2.5A
-
-
117
mΩ
VGS=4.5V, ID=2A
-
-
190
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=4.5V, ID=2.5A
-
3.4
-
S
IDSS
Drain-Source Leakage Current
VDS=25V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=55 C) VDS=20V ,VGS=0V
-
-
10
uA
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=2.5A
-
5.9
10
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=15V
-
0.8
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
2.1
-
nC
VDS=15V
-
4.5
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
11.5
-
ns
td(off)
Turn-off Delay Time
RG=6Ω,VGS=10V
-
12
-
ns
tf
Fall Time
RD=15Ω
-
3
-
ns
Ciss
Input Capacitance
VGS=0V
-
110
-
pF
Coss
Output Capacitance
VDS=15V
-
85
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
39
-
pF
Min.
Typ.
-
-
1
A
-
-
10
A
-
-
1.2
V
Source-Drain Diode
Symbol
IS
ISM
VSD
Parameter
Test Conditions
VD=VG=0V , VS=1.2V
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )
1
2
Forward On Voltage
IS=1.25A, VGS=0V
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2304GN-HF
10
10
T A =150 o C
T A =25 o C
V GS =10V - 5V
V GS =10V - 5V
8
ID , Drain Current (A)
ID , Drain Current (A)
8
6
V GS =4V
4
2
6
V GS =4V
4
2
V GS =3V
V GS =3V
0
0
0
2
4
6
8
10
0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
4
6
8
10
Fig 2. Typical Output Characteristics
700
1.8
I D =2A
T A =25 ℃
V GS =10V
I D =2.5A
1.6
Normalized RDS(ON)
600
RDS(ON) (mΩ )
2
V DS , Drain-to-Source Voltage (V)
500
400
300
1.4
1.2
1.0
200
0.8
100
0
0.6
0
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.25
10
VGS(th) (V)
IF (A)
2.05
1
o
o
T j =150 C
T j =25 C
1.85
1.65
0
1.45
0.1
0.5
0.9
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.3
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2304GN-HF
f=1.0MHz
1000
V DS =15V
I D =2.5A
8
6
C (pF)
VGS , Gate to Source Voltage (V)
10
C iss
100
4
C oss
C rss
2
0
10
0
1
2
3
4
5
6
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (Rthja)
Duty factor=0.5
ID (A)
10
1ms
1
10ms
100ms
0
o
T A =25 C
Single Pulse
1s
DC
0
0.2
0.1
0.1
0.05
PDM
0.01
t
T
Single Pulse
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja = 270℃/W
0.001
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
Fig10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4