AP2301BGN-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Small Package Outline
D
BVDSS
-20V
RDS(ON)
130mΩ
ID
▼ Surface Mount Device
- 2.8A
▼ RoHS Compliant & Halogen-Free
S
SOT-23
Description
G
D
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
G
S
The SOT-23 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
- 20
V
+8
V
3
-2.8
A
3
-2.1
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
-12
A
PD@TA=25℃
Total Power Dissipation
1.38
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-amb
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
90
℃/W
1
200905122
AP2301BGN-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=-250uA
-20
-
-
V
VGS=-4.5V, ID=-2.8A
-
-
130
mΩ
VGS=-2.5V, ID=-2A
-
-
190
mΩ
-0.5
-
-1.25
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
gfs
Forward Transconductance
VDS=-5V, ID=-2A
-
7.6
-
S
IDSS
Drain-Source Leakage Current
VDS=-16V, VGS=0V
-
-
-1
uA
IGSS
Gate-Source Leakage
VGS=+8V, VDS=0V
-
-
+100
nA
ID=-2A
-
7.5
12
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-16V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
3
-
nC
VDS=-10V
-
8.5
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
18
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-5V
-
22
-
ns
tf
Fall Time
RD=10Ω
-
10
-
ns
Ciss
Input Capacitance
VGS=0V
-
550
1470
pF
Coss
Output Capacitance
VDS=-20V
-
60
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
55
-
pF
Rg
Gate Resistance
f=1.0MHz
-
6
9
Ω
Min.
Typ.
IS=-1.2A, VGS=0V
-
-
-1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=-2A, VGS=0V,
-
16
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
9
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2301BGN-HF
20
20
T A =25 o C
-2.5V
12
8
V G = -2.0V
4
65mΩ
12
-2.5V
8
V G = -2.0V
4
0
0
0
1
2
3
4
5
0
-V DS , Drain-to-Source Voltage (V)
2
3
4
5
6
Fig 2. Typical Output Characteristics
1.6
110
I D = -2A
I D = -2.8A
V GS = -4.5V
T A =25 o C
100
1.4
90
1.2
RDS(ON)
RDS(ON) (Ω )
1
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
80
1
70
0.8
0.6
60
1
2
3
4
-50
5
Fig 3. On-Resistance v.s. Gate Voltage
3
1.2
Normalized -VGS(th) (V)
1.4
T j =150 o C
50
100
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
4
2
0
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
-IS(A)
-5.0V
-4.5V
-3.5V
16
-ID , Drain Current (A)
16
-ID , Drain Current (A)
T A = 150 o C
-5.0V
-4.5V
-3.5V
T j =25 o C
1
0.8
1
2.01E+08
0.6
0
0
0.4
0.8
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
T j , Junction Temperature (
100
o
150
C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2301BGN-HF
800
6
600
I D = -2A
65mΩ
C (pF)
-VGS , Gate to Source Voltage (V)
f=1.0MHz
8
V DS = -16V
4
400
2
200
0
0
0
2
4
6
8
10
C iss
12
C oss
C rss
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (Rthja)
DUTY=0.5
-ID (A)
10
1ms
1
10ms
100ms
0.1
T A =25 o C
Single Pulse
1s
DC
0.01
0.2
0.1
0.1
0.05
PDM
t
0.01
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Single Pulse
Rthja = 270℃/W
0.001
0.1
1
10
100
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
Charge
Q
td(off) tf
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4