AP2308GEN-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Capable of 2.5V Gate Drive
D
▼ Lower Gate Charge
▼ Fast Switching Performance
BVDSS
20V
RDS(ON)
600mΩ
ID
1.2A
S
▼ RoHS Compliant & Halogen-Free
SOT-23
G
D
Description
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and costeffectiveness device.
The SOT-23 package is widely used for commercial-industrial
applications.
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
20
V
+8
V
3
1.2
A
3
1
A
Continuous Drain Current , VGS @ 4.5V
Continuous Drain Current , VGS @ 4.5V
1
IDM
Pulsed Drain Current
3.6
A
PD@TA=25℃
Total Power Dissipation
0.69
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
180
℃/W
1
201204255
AP2308GEN-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
20
-
-
V
-
0.1
-
V/℃
VGS=4.5V, ID=1.2A
-
-
600
mΩ
VGS=2.5V, ID=0.3A
-
-
2
Ω
0.5
-
1.25
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=5V, ID=1.2A
-
1
-
S
IDSS
Drain-Source Leakage Current
VDS=20V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70oC) VDS=16V ,VGS=0V
-
-
10
uA
Gate-Source Leakage
VGS=+8V, VDS=0V
-
-
+30
uA
ID=1.2A
-
1.2
2
nC
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=16V
-
0.4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
0.3
-
nC
VDS=10V
-
17
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1.2A
-
36
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=5V
-
76
-
ns
tf
Fall Time
RD=10Ω
-
73
-
ns
Ciss
Input Capacitance
VGS=0V
-
37
60
pF
Coss
Output Capacitance
VDS=10V
-
17
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
13
-
pF
Min.
Typ.
-
-
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
Test Conditions
IS=1.2A, VGS=0V
Max. Units
1.2
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 400℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2308GEN-HF
4.5
3.5
o
4.0
T A = 25 C
3.5
3.0
3.5V
2.5
2.0
1.5
2.5V
5.0V
4.5V
TA=150oC
3.0
ID , Drain Current (A)
ID , Drain Current (A)
5.0V
4.5V
2.5
3.5V
2.0
1.5
2.5V
1.0
1.0
V G = 1 .5V
0.5
V G = 1 .5V
0.5
0.0
0.0
0.0
1.0
2.0
3.0
0.0
1.0
2.0
3.0
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
700
1.6
I D =0.5A
T A =25 o C
I D =1.2A
V G =4.5V
1.4
Normalized RDS(ON)
RDSON (mΩ)
600
500
1.2
1.0
400
0.8
0.6
300
2
3
4
5
-50
0
V GS , Gate-to-Source Voltage (V)
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
1.0
0.8
Normalized VGS(th)
1.5
IS(A)
0.6
0.4
T j =150 o C
T j =25 o C
1.0
0.5
0.2
0.0
0.0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2308GEN-HF
f=1.0MHz
10
100
V DS =10V
V DS =12V
V DS =16V
6
C (pF)
VGS , Gate to Source Voltage (V)
I D =1.2A
8
C iss
4
C oss
2
C rss
10
0
0
0.5
1
1.5
2
2.5
1
3
5
7
9
11
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Operation in this area
limited by RDS(ON)
Normalized Thermal Response (Rthja)
10
1ms
ID (A)
1
10ms
0.1
100ms
1s
o
T A =25 C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.01
T
0.01
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja = 400℃/W
DC
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Circuit
Charge
Q
Fig 12. Gate Charge Circuit
4