AP2608AGY-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Fast Switching Characteristic
D
▼ Lower Gate Charge
▼ Small Footprint & Low Profile Package
▼ Halogen Free & RoHS Compliant Product
BVDSS
150V
RDS(ON)
1.5Ω
ID
0.78A
G
S
S
D
Description
D
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
G
SOT-26
D
D
The S0T-26 package is widely used for commercial-industrial surface
mount applications.
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
150
V
+20
V
3
0.78
A
3
0.62
A
Continuous Drain Current , VGS @ 10V
Continuous Drain Current , VGS @ 10V
1
IDM
Pulsed Drain Current
3
A
PD@TA=25℃
Total Power Dissipation
2
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
62.5
℃/W
1
201105201
AP2608AGY-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
150
-
-
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=0.5A
-
-
1.5
Ω
VGS=4.5V, ID=0.2A
-
-
1.8
Ω
0.8
-
2.5
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=10V, ID=0.5A
-
1.4
-
S
IDSS
Drain-Source Leakage Current
VDS=120V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=0.5A
-
5
8
nC
Qgs
Gate-Source Charge
VDS=75V
-
0.7
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
1.2
-
nC
td(on)
Turn-on Delay Time
VDS=75V
-
3
-
ns
tr
Rise Time
ID=0.5A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
12
-
ns
tf
Fall Time
VGS=10V
-
6
-
ns
Ciss
Input Capacitance
VGS=0V
-
180
288
pF
Coss
Output Capacitance
VDS=15V
-
20
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
13
-
pF
Rg
Gate Resistance
f=1.0MHz
-
3.3
6.6
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=0.5A, VGS=0V
-
-
1.3
V
trr
Reverse Recovery Time
IS=1A, VGS=0V,
-
30
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
37
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board t ≦ 10S ; 156℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2608AGY-HF
2
2.8
10V
7.0V
6.0V
5.0V
V G =4.0V
ID , Drain Current (A)
2.4
2
10V
7.0V
6.0V
5.0V
V G =4.0V
o
T A =150 C
1.6
ID , Drain Current (A)
T A =25 o C
1.6
1.2
1.2
0.8
0.8
0.4
0.4
0
0
0
2
4
6
8
0
10
4
8
12
16
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.4
1.2
I D =1mA
I D =0.5A
V G =10V
Normalized RDS(ON)
Normalized BVDSS (V)
2.0
1.1
1
1.6
1.2
0.9
0.8
0.8
0.4
-50
0
50
100
150
-50
0
T j , Junction Temperature ( o C)
50
100
150
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
2
1.6
I D =250uA
1.6
Normalized VGS(th)(V)
IS(A)
1.2
1.2
T j =150 o C
T j =25 o C
0.8
0.8
0.4
0.4
0
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 6. Normalized Gate Threshold
Voltage v.s. Junction Temperature
3
AP2608AGY-HF
f=1.0MHz
12
240
10
200
8
160
C iss
C (pF)
VGS , Gate to Source Voltage (V)
I D =0.5A
V DS =75V
6
120
4
80
2
40
C oss
C rss
0
0
0
1
2
3
4
5
1
6
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
10
1
Operation in this area
limited by RDS(ON)
ID (A)
1
Normalized Thermal Response (Rthja)
Duty factor=0.5
100us
1ms
0.1
10ms
100ms
1s
0.01
o
DC
T A =25 C
Single Pulse
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
0.01
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja = 156℃/W
0.001
0.001
0.1
1
10
100
1000
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4