AP6970GN2-HF Halogen-Free Product Advanced Power Electronics Corp. DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET G2 S2 BVDSS 20V ▼ Bottom Exposed DFN RDS(ON) 45mΩ ▼ Lower Profile ID D1 ▼ Lower Gate Charge 4.5A ▼ Halogen Free & RoHS Compliant Product S1 G1 D2 Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. D1 G2 S2 D1 G2 S2 D1 S1 G1 D2 D2 DFN 2x2 S1 G1 D2 Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Rating Units 20 V +12 V 3 4.5 A 3 3.6 A 20 A 1.38 W Continuous Drain Current @ VGS=4.5V Continuous Drain Current @ VGS=4.5V 1 IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Value Unit Maximum Thermal Resistance, Junction-ambient 3 90 ℃/W Data and specifications subject to change without notice 1 201104121 AP6970GN2-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units 20 - - V BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA RDS(ON) Static Drain-Source On-Resistance2 VGS=4.5V, ID=4A - - 45 mΩ VGS=2.5V, ID=3A - - 64 mΩ 0.3 - 1.2 V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA gfs Forward Transconductance VDS=5V, ID=4A - 11 - S IDSS Drain-Source Leakage Current VDS=16V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=+12V, VDS=0V - - +30 uA Qg Total Gate Charge ID=4A - 4.5 7.2 nC Qgs Gate-Source Charge VDS=10V - 0.7 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 1.7 - nC td(on) Turn-on Delay Time VDS=10V - 6 - ns tr Rise Time ID=1A - 7.5 - ns td(off) Turn-off Delay Time RG=3.3Ω - 11 - ns tf Fall Time VGS=5V - 2.5 - ns Ciss Input Capacitance VGS=0V - 275 440 pF Coss Output Capacitance VDS=10V - 70 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 60 - pF Rg Gate Resistance f=1.0MHz - 2.8 - Ω Min. Typ. Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=1.2A, VGS=0V - - 1.2 V trr Reverse Recovery Time IS=4A, VGS=0V, - 16 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 8 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 250 ℃/W when mounted on Min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP6970GN2-HF 30 20 o 20 2.5V V G = 2.0V 10 5.0V 4.5V 3.5V 16 ID , Drain Current (A) ID , Drain Current (A) T A = 150 o C 5.0V 4.5V 3.5V T A = 25 C 2.5V 12 V G = 2.0V 8 4 0 0 0 1 2 3 4 5 0 1 Fig 1. Typical Output Characteristics 3 4 5 Fig 2. Typical Output Characteristics 70 2.0 ID=4A V G = 4.5 V Normalized RDS(ON) ID=3A T A =25 ℃ 60 RDS(ON) (mΩ) 2 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) 50 40 1.6 1.2 0.8 30 0.4 1 2 3 4 5 6 -50 0 50 100 150 o V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 4 I D =250uA Normalized VGS(th) (V) 1.6 IS(A) 3 2 T j =150 o C T j =25 o C 1.2 0.8 1 0.4 0 0.0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP6970GN2-HF f=1.0MHz 400 I D = 4A V DS =10V 6 300 C iss C (pF) VGS , Gate to Source Voltage (V) 8 4 200 2 100 C oss C rss 0 0 0 2 4 6 1 8 5 9 Fig 7. Gate Charge Characteristics 17 21 25 Fig 8. Typical Capacitance Characteristics 100 Normalized Thermal Response (Rthja) 1 10 ID (A) 13 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Operation in this area limited by RDS(ON) 100us 1ms 1 10ms 100ms 0.1 1s DC o T A =25 C Single Pulse Duty factor=0.5 0.2 0.1 PDM 0.1 t 0.05 T Duty factor = t/T Peak Tj = PDM x Rthja + T a 0.02 Rthja = 250℃/W 0.01 Single Pulse 0.01 0.01 0.01 0.1 1 10 100 0.0001 0.001 0.01 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.1 1 10 100 1000 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4