AP2530GY-HF Halogen-Free Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge N-CH BVDSS D2 S1 ▼ Low On-resistance RDS(ON) D1 ▼ Surface Mount Package 72mΩ ID G2 ▼ RoHS Compliant & Halogen-Free SOT-26 30V S2 3.3A P-CH BVDSS G1 -30V RDS(ON) Description 150mΩ ID Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. -2.3A D2 D1 The SOT-26 package is widely used for commercial-industrial applications. G1 G2 S2 S1 Absolute Maximum Ratings Symbol Parameter Rating N-channel VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ Continuous Drain Current 3 ID@TA=70℃ Continuous Drain Current 3 1 Units P-channel 30 -30 V +20 +20 V 3.3 -2.3 A 2.6 -1.8 A 10 -10 A IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation 1.14 W Linear Derating Factor 0.01 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter 3 Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value Unit 110 ℃/W 1 201003263 AP2530GY-HF o N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. 30 - - V - 0.02 - V/℃ VGS=10V, ID=3A - - 72 mΩ VGS=4.5V, ID=2A - - 125 mΩ BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=0V, ID=250uA 2 Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=5V, ID=3A - 4 - S IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 1 uA Drain-Source Leakage Current (T j=70oC) VDS=24V, VGS=0V - - 25 uA Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA ID=3A - 3 5 nC IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=25V - 1 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 2 - nC 2 td(on) Turn-on Delay Time VDS=15V - 6 - ns tr Rise Time ID=1A - 8 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 11 - ns tf Fall Time RD=15Ω - 2 - ns Ciss Input Capacitance VGS=0V - 170 270 pF Coss Output Capacitance VDS=25V - 50 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 35 - pF Rg Gate Resistance f=1.0MHz - 0.5 0.8 Ω Min. Typ. IS=0.9A, VGS=0V - - 1.3 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=3A, VGS=0V - 14 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 7 - nC 2 AP2530GY-HF o P-CH Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit -30 - - V - 0.03 - V/℃ VGS=-10V, ID=-2A - - 150 mΩ VGS=-4.5V, ID=-1A - - 280 mΩ BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA RDS(ON) VGS=0V, ID=-250uA Static Drain-Source On-Resistance 2 VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-5V, ID=-2A - 2 - S IDSS Drain-Source Leakage Current VDS=-30V, VGS=0V - - -1 uA Drain-Source Leakage Current (T j=70 C) VDS=-24V ,VGS=0V - - -25 uA Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA ID=-2A - 3 5 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-25V - 1 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 2 - nC 2 td(on) Turn-on Delay Time VDS=-15V - 6 - ns tr Rise Time ID=-1A - 8 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=-5V - 17 - ns tf Fall Time RD=15Ω - 4 - ns Ciss Input Capacitance VGS=0V - 150 240 pF Coss Output Capacitance VDS=-25V - 50 - pF Crss Rg Reverse Transfer Capacitance f=1.0MHz - 40 - pF Gate Resistance f=1.0MHz - 8 12 Ω Source-Drain Diode Symbol VSD Parameter Forward On Voltage2 2 Min. Typ. Max. Unit IS=-0.9A, VGS=0V Test Conditions - - -1.3 V trr Reverse Recovery Time IS=2A, VGS=0V, - 15 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 7 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 2 3.Surface mounted on 1 in copper pad of FR4 board, t<5sec ; 180℃/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 3 AP2530GY-HF N-Channel 10 10 T A =25 o C 6 4 10 V 7.0 V 5.0 V 4.5 V 8 ID , Drain Current (A) 8 ID , Drain Current (A) T A = 150 o C 10 V 7.0 V 5.0 V 4.5 V V G = 3.0 V 6 4 V G = 3.0 V 2 2 0 0 0 1 2 3 4 0 1 V DS , Drain-to-Source Voltage (V) 2 3 4 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.8 170 I D =3A V G =10V 130 Normalized RDS(ON) RDS(ON) (mΩ ) ID=2A T A =25 o C 90 50 1.4 1.0 0.6 2 4 6 8 10 -50 0 V GS , Gate-to-Source Voltage (V) 50 100 150 T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 Normalized VGS(th) (V) 3 IS(A) 2 T j =150 o C T j =25 o C 1 1.2 0.8 0.4 0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 4 AP2530GY-HF N-Channel f=1.0MHz 1000 ID=3A V DS = 25 V 9 C (pF) VGS , Gate to Source Voltage (V) 12 6 C iss 100 C oss C rss 3 10 0 0 1 2 3 4 1 5 5 Fig 7. Gate Charge Characteristics 13 17 21 25 29 Fig 8. Typical Capacitance Characteristics 100 Normalized Thermal Response (Rthja) 1 10 ID (A) 9 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Operation in this area limited by RDS(ON) 100us 1ms 1 10ms 0.1 100ms 1s DC T A =25 o C Single Pulse 0.01 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM 0.02 t 0.01 T Single Pulse 0.01 Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 180℃/W 0.001 0.01 0.1 1 10 100 0.0001 0.001 V DS , Drain-to-Source Voltage (V) 0.01 0.1 1 10 100 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 8 VG ID , Drain Current (A) V DS =5V T j =25 o C 6 T j =150 o C QG 4.5V 4 QGS QGD 2 Charge Q 0 0 2 4 6 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 5 AP2530GY-HF P-Channel 10 10 T A = 150 C 8 -ID , Drain Current (A) -ID , Drain Current (A) 8 -4.5 V 6 4 V G = - 3.0 V 2 - 5.0 V 6 - 4.5 V 4 V G = - 3.0 V 2 0 0 0 2 4 6 0 2 -V DS , Drain-to-Source Voltage (V) 6 Fig 2. Typical Output Characteristics 1.5 400 I D = -2 A V G = -10 V I D = -1 A o Normalized RDS(ON) T A =25 C RDS(ON) (mΩ) 4 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 300 200 1.2 0.9 0.6 100 2 4 6 8 -50 10 -V GS , Gate-to-Source Voltage (V) 50 100 150 T j , Junction Temperature ( C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 1.5 1.2 Normalized -VGS(th) (V) 2.0 1.0 T j =150 o C 0 o Fig 3. On-Resistance v.s. Gate Voltage -IS(A) - 10 V - 7.0 V o - 10 V - 7.0 V - 5.0 V o T A = 25 C T j =25 o C 0.5 1.0 0.8 0.6 0.0 0 0.2 0.4 0.6 0.8 1 1.2 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 6 AP2530GY-HF P-Channel f=1.0MHz 1000 I D =-2A V DS =-25V 9 C (pF) -VGS , Gate to Source Voltage (V) 12 6 C iss 100 C oss C rss 3 10 0 0 1 2 3 4 1 5 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 100 10 -ID (A) Operation in this area limited by RDS(ON) 100us 1ms 1 10ms 100ms 1s DC 0.1 o T A =25 C Single Pulse 0.01 Normalized Thermal Response (R thja) Duty factor=0.5 0.2 0.1 0.1 0.05 PDM 0.01 t 0.2 T Single Pulse 0.01 Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja = 180℃/W 0.001 0.01 0.1 1 10 100 0.0001 0.001 0.01 -V DS , Drain-to-Source Voltage (V) 0.1 1 10 100 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 6 VG -ID , Drain Current (A) V DS =-5V T j =25 o C T j =150 o C QG 4 4.5V QGS QGD 2 Charge Q 0 0 2 4 6 -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 7