AP03N70I-H
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Repetitive Avalanche Rated
D
▼ Fast Switching Speed
▼ Simple Drive Requirement
G
▼ RoHS Compliant
BVDSS
700V
RDS(ON)
4.4Ω
ID
2.5A
S
Description
AP03N70 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications.
TO-220CFM type provide high blocking voltage to overcome voltage surge
and sag in the toughest power system with the best combination of fast
G
D
switching,ruggedized design and cost-effectiveness.
S
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
700
V
VGS
Gate-Source Voltage
±30
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
2.5
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
1.6
A
1
IDM
Pulsed Drain Current
8
A
PD@TC=25℃
Total Power Dissipation
29
W
0.23
W/℃
Linear Derating Factor
2
EAS
Single Pulse Avalanche Energy
32
mJ
IAR
Avalanche Current
2.5
A
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Value
Units
Rthj-c
Symbol
Thermal Resistance Junction-case
Max.
4.3
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
65
℃/W
Parameter
Data & specifications subject to change without notice
200417062-1/4
AP03N70I-H
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
700
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.6
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=1.6A
-
-
4.4
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=1.6A
-
2
-
S
VDS=600V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=480V, VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS=±30V
-
-
±100
nA
ID=1A
-
12
20
nC
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
3
VGS=0V, ID=1mA
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=480V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
4
-
nC
VDD=300V
-
8.5
-
ns
3
td(on)
Turn-on Delay Time
tr
Rise Time
ID=2.5A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=10Ω,VGS=10V
-
19
-
ns
tf
Fall Time
RD=120Ω
-
8
-
ns
Ciss
Input Capacitance
VGS=0V
-
590
950
pF
Coss
Output Capacitance
VDS=25V
-
50
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
6
-
pF
Min.
Typ.
IS=3A, VGS=0V
-
-
1.5
V
IS=3A, VGS=0V,
-
407
-
ns
dI/dt=100A/µs
-
2110
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
3
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by safe operating area.
2.Starting Tj=25oC , VDD=50V , L=15mH , RG=25Ω , IAS=3A.
3.Pulse width <300us , duty cycle <2%.
2/4
AP03N70I-H
4
3
10V
6.0V
o
T C =25 C
o
T C =150 C
10V
5.0V
2
ID , Drain Current (A)
ID , Drain Current (A)
3
2
5.0V
1
2
4.5V
1
4.0V
1
4.5V
V G =4.0V
V G =3.5V
0
0
0
5
10
15
20
25
0
5
10
15
20
25
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.0
1.2
1.1
Normalized RDS(ON)
Normalized BVDSS (V)
I D =1.6A
V G =10V
1.0
2.0
1.0
0.9
0.0
0.8
-50
0
50
100
-50
150
o
Fig 3. Normalized BVDSS v.s. Junction
100
150
v.s. Junction Temperature
100
5
10
4
T j = 25 o C
VGS(th) (V)
IS (A)
50
Fig 4. Normalized On-Resistance
Temperature
T j = 150 o C
0
T j , Junction Temperature ( o C)
T j , Junction Temperature ( C)
1
0.1
3
2
0.01
1
0.1
0.3
0.5
0.7
0.9
1.1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.3
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP03N70I-H
ID =1A
VDS =480V
12
C iss
C (pF)
VGS , Gate to Source Voltage (V)
f=1.0MHz
10000
16
8
100
C oss
4
C rss
0
1
0
4
8
12
1
16
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
10
1
Normalized Thermal Response (Rthjc)
Duty factor=0.5
10us
ID (A)
1
100us
1ms
10ms
0.1
100ms
o
T c =25 C
Single Pulse
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
0.01
0.01
1
10
100
1000
10000
0.00001
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4/4