AP9452GG
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower gate charge
D
▼ Capable of 2.5V gate drive
▼ Single Drive Requirement
BVDSS
20V
RDS(ON)
50mΩ
ID
G
4A
S
Description
D
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
S
SOT-89
D
G
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Total Power Dissipation
V
V
4
A
3
2.5
A
12
A
1.25
W
1
PD@TA=25℃
20
+16
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
Units
3
Continuous Drain Current, VGS @ 4.5V
IDM
Rating
Linear Derating Factor
0.01
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
100
℃/W
1
200806173
AP9452GG
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
20
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.03
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=4A
-
-
38
mΩ
VGS=4.5V, ID=4A
-
-
50
mΩ
VGS=2.5V, ID=3A
-
-
80
mΩ
0.5
-
1.5
V
VDS=5V, ID=3A
-
10
-
S
VGS(th)
Gate Threshold Voltage
VGS=0V, ID=250uA
VDS=VGS, ID=250uA
2
gfs
Forward Transconductance
IDSS
Drain-Source Leakage Current
VDS=20V, VGS=0V
-
-
1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=16V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS= +16V
-
-
+100
nA
ID=4A
-
6
10
nC
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=16V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
2
-
nC
VDS=10V
-
8
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
9
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=5V
-
13
-
ns
tf
Fall Time
RD=10Ω
-
3
-
ns
Ciss
Input Capacitance
VGS=0V
-
360
570
pF
Coss
Output Capacitance
VDS=20V
-
80
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
65
-
pF
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=1A, VGS=0V
-
-
1.3
V
trr
Reverse Recovery Time2
IS=4A, VGS=0V,
-
18
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
10
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mount on FR4 board, t < 10s.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9452GG
40
50
o
T A =25 C
o
T A =150 C
ID , Drain Current (A)
ID , Drain Current (A)
4.5V
4.5V
40
30
3.5V
20
30
3.5V
20
2.5V
10
2.5V
10
V GS =1.5V
V GS =1.5V
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
65
ID=4A
I D =4A
T A =25 o C
1.6
V GS =4.5V
Normalized RDS(ON)
RDS(ON) (mΩ)
55
45
1.4
1.2
1.0
35
0.8
0.6
25
1
3
5
7
9
-50
11
100
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.2
10
0.95
VGS(th) (V)
100
IS (A)
50
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
T j =150 o C
0
o
V GS , Gate-to-Source Voltage (V)
T j =25 o C
1
0.1
0.7
0.45
0.01
0.2
0
0.4
0.8
1.2
V SD , Source -to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9452GG
14
ID=4A
12
Ciss
V DS =16V
V DS =12V
V DS =10V
10
8
C (pF)
VGS , Gate to Source Voltage (V)
f=1.0MHz
1000
100
Coss
Crss
6
4
2
10
0
0
2
4
6
8
10
12
14
1
16
5
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (Rthjc)
1
10
ID (A)
9
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
1ms
10ms
1
100ms
1s
DC
0.1
o
T A =25 C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Rthja=100℃/W
0.01
0.001
0.1
1
10
100
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off)tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline & Packing : SOT-89
C
J
D
B
2
1
E
3
F
I
H
K
Millimeters
SYMBOLS
MIN
NOM
MAX
A
4.40
-
4.60
B
4.05
-
4.25
C
1.40
-
1.75
E
2.40
-
2.60
F
0.89
-
1.20
I
0.35
-
0.55
H
----
1.50
----
G
----
3.00
----
J
1.40
-
1.60
K
0.35
-
0.43
G
1.All Dimensions Are in Millimeters.
A
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information : SOT-89
Part Number
9452
YWWS
Date Code (YWWS)
Y : Year
WW：Week
S：Sequence
5