AP9467GS
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
D
▼ Single Drive Requirement
▼ Fast Switching Characteristics
BVDSS
40V
RDS(ON)
11mΩ
ID
G
52A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and costeffectiveness.
G D
S
TO-263(S)
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
40
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
52
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
33
A
1
IDM
Pulsed Drain Current
200
A
PD@TC=25℃
Total Power Dissipation
44.6
W
Linear Derating Factor
0.36
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Parameter
Maximum Thermal Resistance, Junction-case
3
Value
Unit
2.8
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
40
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
℃/W
Data and specifications subject to change without notice
1
200810072
AP9467GS
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
40
-
-
V
VGS=10V, ID=30A
-
-
11
mΩ
VGS=4.5V, ID=20A
-
-
20
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=30A
-
35
-
S
IDSS
Drain-Source Leakage Current
VDS=40V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (T j=150 C) VDS=32V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS= +20V
-
-
+100
nA
ID=30A
-
11
29
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=32V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
7
-
nC
VDS=20V
-
8
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=30A
-
69
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
20
-
ns
tf
Fall Time
RD=0.67Ω
-
6
-
ns
Ciss
Input Capacitance
VGS=0V
-
970
1660
pF
Coss
Output Capacitance
VDS=25V
-
185
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
110
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.8
3
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=30A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time
IS=20A, VGS=0V,
-
27
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
20
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9467GS
180
80
10V
7.0V
o
T C =25 C
10V
7.0V
5.0V
4.5V
T C =150 o C
.
ID , Drain Current (A)
ID , Drain Current (A)
150
120
5.0V
90
4.5V
60
60
40
20
V G =3.0V
30
V G =3.0V
0
0
0
1
2
3
4
5
0
1
V DS , Drain-to-Source Voltage (V)
2
3
4
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
16
2.2
I D =30A
I D =30A
V G =10V
T C =25 o C
14
Normalized RDS(ON)
RDS(ON) (mΩ)
1.8
12
10
1.4
1.0
8
6
0.6
2
4
6
8
10
-50
Fig 3. On-Resistance v.s. Gate Voltage
25
1.4
Normalized VGS(th) (V)
1.6
IS(A)
20
T j =150 o C
50
100
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
30
15
0
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
T j =25 o C
10
5
1.2
1
0.8
0.6
0
0.4
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9467GS
f=1.0MHz
8
1600
6
1200
V DS =32V
C (pF)
VGS , Gate to Source Voltage (V)
I D =30A
4
2
C iss
800
400
C oss
C rss
0
0
0
4
8
12
16
1
20
5
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
10us
100
100us
10
1ms
10ms
100ms
DC
1
T C =25 o C
Single Pulse
Normalized Thermal Response (Rthjc)
1000
ID (A)
9
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
0.1
1
10
100
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-263
E
E3
SYMBOLS
E1
E2
D2
D1
D
b1
L2
L3
e
MIN
NOM
MAX
A
4.25
4.75
5.20
A1
0.00
0.15
0.30
A2
2.20
2.45
2.70
b
0.70
0.90
1.10
b1
1.07
1.27
1.47
c
0.30
0.45
0.60
c1
1.15
1.30
1.45
D
8.30
8.90
9.40
D1
5.10(ref)
D2
1.27(ref)
E
b
L4
E2
6.40(ref)
E3
8.00(ref)
2.04
2.54
L1
2.54(ref)
L2
1.50
4.50
L4
θ
c θ
c1
c1
10.10
7.40(ref)
L3
A2
9.70
E1
e
A
A
Millimeters
4.90
10.50
3.04
5.30
1.50
0°
-----
5°
1.All Dimensions Are in Millimeters.
A1
A1
2.Dimension Does Not Include Mold Protrusions.
L1
Part Marking Information & Packing : TO-263
Part Number
Package Code
9467GS
YWWSSS
LOGO
meet Rohs requirement
for low voltage MOSFET only
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5