AP9474GM
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
D
D
▼ Single Drive Requirement
D
D
BVDSS
60V
RDS(ON)
10.5mΩ
ID
▼ Surface Mount Package
SO-8
S
S
S
12.8A
G
D
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G
S
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage
applications such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
60
V
+20
V
3
12.8
A
3
9.6
A
Continuous Drain Current , VGS @ 10V
Continuous Drain Current , VGS @ 10V
1
IDM
Pulsed Drain Current
50
A
PD@TA=25℃
Total Power Dissipation
2.5
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
50
℃/W
1
200902172
AP9474GM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=1mA
60
-
-
V
VGS=10V, ID=12A
-
-
10.5
mΩ
VGS=6V, ID=10A
-
-
13
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=10A
-
25
-
S
IDSS
Drain-Source Leakage Current
VDS=48V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70 C) VDS=48V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
ID=10A
-
51
84
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=48V
-
5.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
17
-
nC
VDS=30V
-
10
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
8
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
43
-
ns
tf
Fall Time
RD=30Ω
-
20
-
ns
Ciss
Input Capacitance
VGS=0V
-
2115 3400
pF
Coss
Output Capacitance
VDS=25V
-
260
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
200
-
pF
Min.
Typ.
IS=1.5A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=10A, VGS=0V,
-
34
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
43
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9474GM
50
50
10V
7.0V
5.0V
4.5V
40
ID , Drain Current (A)
40
ID , Drain Current (A)
T A =150 o C
10V
7.0V
5.0V
4.5V
o
T A =25 C
30
20
30
20
V G =3.0V
V G =3.0V
10
10
0
0
0
1
2
3
0
4
1
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
3
4
Fig 2. Typical Output Characteristics
14
2.0
I D =10A
I D =12A
T A =25 o C
Normalized RDS(ON)
V G =10V
12
RDSON (mΩ)
2
V DS , Drain-to-Source Voltage (V)
10
1.6
1.2
0.8
8
0.4
6
2
4
6
8
-50
10
Fig 3. On-Resistance v.s. Gate Voltage
50
100
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
8
1.2
Normalized VGS(th) (V)
10
o
T j =150 C
0
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
T j =25 o C
IS (A)
6
4
2
1
0.8
0.6
0
0.4
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9474GM
12
f=1.0MHz
10000
V DS =48V
10
Ciss
1000
8
C (pF)
VGS , Gate to Source Voltage (V)
I D =10A
6
Coss
Crss
100
4
2
10
0
0
10
20
30
40
50
1
60
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
100
100us
1ms
10ms
1
100ms
0.1
1s
o
T A =25 C
Single Pulse
DC
Normalized Thermal Response (Rthja)
1
10
ID (A)
9
V DS , Drain-to-Source Voltage (V)
DUTY=0.5
0.2
0.1
PDM
0.1
t
T
0.05
Duty factor = t/T
Peak Tj = P DM x Rthja + Ta
0.02
Rthja = 125℃/W
0.01
Single Pulse
0.01
0.01
0.01
0.1
1
10
100
0.001
0.01
0.1
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4