AP9962GM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
D2
▼ Single Drive Requirement
▼ Surface Mount Package
D1
D2
D1
BVDSS
40V
RDS(ON)
25mΩ
ID
7A
G2
▼ RoHS Compliant
S2
SO-8
S1
G1
Description
D2
D1
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G2
G1
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
40
V
+20
V
3
7
A
3
5.5
A
Continuous Drain Current , VGS @ 10V
Continuous Drain Current , VGS @ 10V
1
IDM
Pulsed Drain Current
20
A
PD@TA=25℃
Total Power Dissipation
2
W
Linear Derating Factor
0.016
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
62.5
℃/W
1
200901202
AP9962GM-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
40
-
-
V
VGS=10V, ID=7A
-
-
25
mΩ
VGS=4.5V, ID=5A
-
-
40
mΩ
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=7A
-
11
-
S
IDSS
Drain-Source Leakage Current
VDS=40V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
ID=7A
-
25.8
-
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=32V
-
4.4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
9.1
-
nC
VDS=20V
-
10.6
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
6.8
-
ns
td(off)
Turn-off Delay Time
RG=5.7Ω,VGS=10V
-
26.3
-
ns
tf
Fall Time
RD=20Ω
-
12
-
ns
Ciss
Input Capacitance
VGS=0V
-
1165
-
pF
Coss
Output Capacitance
VDS=25V
-
205
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
142
-
pF
Min.
Typ.
IS=1.7A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
Is=7A, VGS=0V,
-
21.2
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
16
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9962GM-HF
25
25
10V
8.0V
20
ID , Drain Current (A)
ID , Drain Current (A)
T A =150 o C
10V
8.0V
o
T A =25 C
20
5.0V
4.0V
15
10
5.0V
4.0V
15
10
V G =3.0V
5
5
V G =3.0V
0
0
0
1
2
3
4
5
0
6
1
V DS , Drain-to-Source Voltage (V)
2
3
4
5
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
35
1.8
I D =7A
V G =10V
ID=7A
o
T A =25 C
1.6
Normalized RDS(ON)
RDS(ON) (mΩ)
30
25
1.4
1.2
1.0
20
0.8
15
0.6
3
4
5
6
7
8
9
10
11
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
100
3
2.8
2.6
10
VGS (th)
IS(A)
2.4
o
o
T j =150 C
T j =25 C
1
2.2
2
1.8
1.6
0.1
1.4
1.2
1
0.01
0
0.4
0.8
1.2
V SD ,Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
100
150
o
Junction Temperature ( C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9962GM-HF
f=1.0MHz
14
10000
I D =7A
V DS =20V
10
1000
V DS =25V
8
C iss
C (pF)
VGS , Gate to Source Voltage (V)
12
V DS =32V
C oss
C rss
6
100
4
2
10
0
0
5
10
15
20
25
30
35
1
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
10
ID (A)
1ms
10ms
1
100ms
1s
0.1
o
T A =25 C
Single Pulse
DC
Normalized Thermal Response (R thja)
DUTY=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
0.01
Single Pulse
Rthja = 135℃/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
RD
VDS
TO THE
D
VDS
0.8x RATED VDS
G
0.5x RATED VDS
RG
G
S
+
VGS
+
S
10V
OSCILLOSCOPE
D
TO THE
OSCILLOSCOPE
VGS
-
Fig 11. Switching Time Circuit
1~ 3 mA
IG
ID
Fig 12. Gate Charge Circuit
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : SO-8
D
Millimeters
8
7
6
5
E1
1
2
3
4
e
B
E
SYMBOLS
MIN
NOM
MAX
A
1.35
1.55
1.75
A1
0.10
0.18
0.25
B
0.33
0.41
0.51
c
0.19
0.22
0.25
D
4.80
4.90
5.00
E
5.80
6.15
6.50
E1
3.80
3.90
4.00
e
1.27 TYP
G
0.254 TYP
L
0.38
－
0.90
α
0.00
4.00
8.00
A
A1
G
1.All Dimension Are In Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : SO-8
Part Number
Package Code
meet Rohs requirement
9962GM
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
If last "S" is numerical letter : Rohs product
If last "S" is English letter : HF & Rohs product
5