AP9979GH-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
D
▼ Single Drive Requirement
▼ Fast Switching Characteristic
60V
RDS(ON)
48mΩ
ID
G
▼ RoHS Compliant & Halogen-Free
BVDSS
20A
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G
D
S
TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
+25
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
20
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
13
A
50
A
34.7
W
2
W
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
3
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
3
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Data and specifications subject to change without notice
Value
Units
3.6
℃/W
62.5
℃/W
1
201206132
AP9979GH-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
60
-
-
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=13A
-
-
48
mΩ
VGS=4.5V, ID=7A
-
-
60
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=13A
-
18
-
S
IDSS
Drain-Source Leakage Current
VDS=60V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+25V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=13A
-
11
18
nC
Qgs
Gate-Source Charge
VDS=48V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
6
-
nC
td(on)
Turn-on Delay Time
VDS=30V
-
7
-
ns
tr
Rise Time
ID=13A
-
20
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
19
-
ns
tf
Fall Time
VGS=10V
-
3
-
ns
Ciss
Input Capacitance
VGS=0V
-
990
1560
pF
Coss
Output Capacitance
VDS=25V
-
90
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
70
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.2
2.4
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=13A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time
IS=13A, VGS=0V,
-
32
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
37
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9979GH-HF
50
50
10V
7.0V
5.0V
T C =25 C
ID , Drain Current (A)
40
40
4.5V
30
20
V G =3.0V
10
5.0V
4.5V
30
20
V G =3.0V
10
0
0
0
2
4
6
8
10
0
2
V DS , Drain-to-Source Voltage (V)
4
6
8
10
12
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
70
2.0
I D =13A
V G =10V
ID=7A
T C =25 o C
Normalized RDS(ON)
60
RDS(ON) (mΩ)
10V
7.0V
o
T C = 150 C
ID , Drain Current (A)
o
50
1.6
1.2
0.8
40
0.4
30
2
4
6
8
-50
10
V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
12
1.5
T j =150 o C
Normalized VGS(th)
IS(A)
9
T j =25 o C
6
1.1
0.7
3
0
0.3
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9979GH-HF
f=1.0MHz
10000
12
I D = 13 A
V DS = 30 V
V DS =38V
V DS = 48 V
8
C iss
1000
C (pF)
VGS , Gate to Source Voltage (V)
10
6
C oss
100
4
C rss
2
0
10
0
10
20
30
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (R thjc)
1
100us
ID (A)
10
1ms
1
10ms
100ms
DC
T C =25 o C
Single Pulse
0.1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.1
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
VG
ID , Drain Current (A)
V DS =5V
T j =25 o C
QG
T j =150 o C
20
4.5V
QGS
QGD
10
Charge
0
0
2
4
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
Q