AP85T10GR-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower On-resistance ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G BVDSS 100V RDS(ON) 8mΩ ID 125A S Description AP85T10 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. G D S TO-262(R) The TO-262 package is widely preferred for all commercialindustrial through hole applications. The low thermal resistance and low package cost contribute to the worldwide popular package. Absolute Maximum Ratings Rating Units VDS Symbol Drain-Source Voltage 100 V VGS Gate-Source Voltage +20 V ID@TC=25℃ Continuous Drain Current (Chip) 125 A 120 A 88 A 300 A Parameter ID@TC=25℃ Continuous Drain Current, V GS @ 10V ID@TC=100℃ Continuous Drain Current, V GS @ 10V 3 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation 300 W PD@TA=25℃ Total Power Dissipation 2.42 W TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value Units 0.5 ℃/W 62 ℃/W 1 201210291 AP85T10GR-HF o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 100 - - V RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V, ID=40A - - 8 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 5 V gfs Forward Transconductance VDS=10V, ID=40A - 75 - S IDSS Drain-Source Leakage Current VDS=80V, VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=40A - 100 160 nC Qgs Gate-Source Charge VDS=80V - 24 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 45 - nC td(on) Turn-on Delay Time VDS=50V - 23 - ns tr Rise Time ID=40A - 95 - ns td(off) Turn-off Delay Time RG=3.3Ω - 47 - ns tf Fall Time VGS=10V - 78 - ns Ciss Input Capacitance VGS=0V - 4670 7470 pF Coss Output Capacitance VDS=25V - 770 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 280 - pF Rg Gate Resistance f=1.0MHz - 1.2 2.4 Ω Min. Typ. IS=40A, VGS=0V - - 1.3 V Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage trr Reverse Recovery Time IS=10A, VGS=0V - 85 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 290 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Package limitation current is 120A. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP85T10GR-HF 300 160 T C = 25 o C 200 ID , Drain Current (A) ID , Drain Current (A) 250 10V 9.0V 8.0V 7.0V V G = 6.0V T C = 1 75 o C 10V 9.0V 8.0V 7.0V 150 V G = 6.0V 100 120 80 40 50 0 0 0 4 8 12 16 20 0 24 2 4 6 8 10 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.4 1.2 I D =40A V G =10V Normalized RDS(ON) Normalized BVDSS (V) 2.0 1.1 1 1.6 1.2 0.9 0.8 0.4 0.8 -50 0 50 100 150 -50 200 0 50 100 150 200 o o T j , Junction Temperature ( C) T j , Junction Temperature ( C) Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature 40 1.4 1.2 30 o IS(A) T j =175 C Normalized VGS(th) o T j =25 C 20 1 0.8 10 0.6 0.4 0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 200 o T j ,Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP85T10GR-HF 12 f=1.0MHz 8000 I D = 40 A V DS = 50 V V DS = 60 V V DS = 80 V 8 6000 C (pF) VGS , Gate to Source Voltage (V) 10 6 C iss 4000 4 2000 2 C oss C rss 0 0 0 20 40 60 80 100 1 120 5 9 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (R thjc) 1000 Operation in this area limited by RDS(ON) 100us ID (A) 100 1ms 10ms 10 100ms DC T c =25 o C Single Pulse Duty factor=0.5 0.2 0.1 0.1 0.05 PDM 0.02 t T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 1 0.1 1 10 100 1000 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4