AP9992GI-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower On-resistance ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free BVDSS 60V RDS(ON) 3.5mΩ ID G 84A S Description AP9992 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink. G D TO-220CFM(I) S Absolute Maximum Ratings Parameter Symbol Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage +20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V 84 A ID@TC=100℃ Continuous Drain Current, V GS @ 10V 53 A 200 A 1 IDM Pulsed Drain Current PD@Tc=25℃ Total Power Dissipation 41.6 W PD@TA=25℃ Total Power Dissipation 1.92 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 3 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 65 ℃/W Data and specifications subject to change without notice 1 201301221 AP9992GI-HF o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 60 - - V RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V, ID=40A - - 3.5 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 5 V gfs Forward Transconductance VDS=10V, ID=40A - 80 - S IDSS Drain-Source Leakage Current VDS=48V, VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=40A - 135 216 nC Qgs Gate-Source Charge VDS=48V - 21 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 75 - nC td(on) Turn-on Delay Time VDS=30V - 28 - ns tr Rise Time ID=40A - 115 - ns td(off) Turn-off Delay Time RG=3.3Ω - 55 - ns tf Fall Time VGS=10V - 100 - ns Ciss Input Capacitance VGS=0V - 5500 8800 pF Coss Output Capacitance VDS=25V - 930 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 670 - pF Rg Gate Resistance f=1.0MHz - 2 4 Ω Min. Typ. IS=40A, VGS=0V - - 1.3 V Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage trr Reverse Recovery Time IS=10A, VGS=0V, - 60 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 130 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9992GI-HF 300 160 ID , Drain Current (A) 250 ID , Drain Current (A) T C =150 o C 10V 9.0V 8.0V o T C =25 C 7.0V 200 150 V G = 6.0V 100 10V 9.0V 8.0V 7.0V V G =6.0V 120 80 40 50 0 0 0 4 8 12 16 20 24 0 2 Fig 1. Typical Output Characteristics 6 8 10 12 Fig 2. Typical Output Characteristics 2.0 1.2 I D =40A V G =10V Normalized RDS(ON) I D =1mA 1.1 Normalized BVDSS 4 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) 1 1.6 1.2 0.8 0.9 0.4 0.8 -50 0 50 100 -50 150 0 50 100 150 T j , Junction Temperature ( o C) T j , Junction Temperature ( o C) Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance v.s. Junction Temperature Temperature 2.0 40 I D =250uA 1.6 T j =150 o C Normalized VGS(th) IS(A) 30 T j =25 o C 20 1.2 0.8 10 0.4 0.0 0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C ) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9992GI-HF f=1.0MHz 12 8000 I D =40A V DS =48V 6000 C iss 8 C (pF) VGS , Gate to Source Voltage (V) 10 6 4000 4 2000 C oss C rss 2 0 0 0 40 80 120 1 160 5 9 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 1000 ID (A) 100 Normalized Thermal Response (Rthjc) Duty factor = 0.5 Operation in this area limited by RDS(ON) 100us 1ms 10 10ms 100ms 1 1s DC T C =25 o C Single Pulse 0.2 0.1 0.1 0.05 0.02 0.01 PDM 0.01 t Single Pulse T Duty Factor = t/T Peak Tj = PDM x Rthjc + T C 0.001 0 0.01 0.1 1 10 100 1000 0.00001 0.0001 V DS ,Drain-to-Source Voltage (V) 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 100 VG ID , Drain Current (A) 80 QG 10V 60 QGS QGD 40 20 Charge Q 0 25 50 75 100 T C , Case Temperature ( 125 o 150 C) Fig 11. Maximum Continuous Drain Current v.s. Case Temperature Fig 12. Gate Charge Waveform 4