ASW114 5-8000 MHz MMIC Amplifier Features Description ·17 dB Gain at 2000 MHz The ASW114, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide range of frequency, being suitable for use in both receiver and transmitter of telecommunication systems up to 8 GHz. The amplifier is available in an SOT-363 package and passes through the stringent DC, RF, and reliability tests. ·14.5 dBm P1dB at 2000 MHz ·29 dBm OIP3 at 2000 MHz ·3.3 dB NF at 2000 MHz ·MTTF > 100 Years ·Single Supply Package Style: SOT-363 Application Circuit Typical Performance Parameters Units Frequency Typical MHz 900 2000 3500 5800 900 2000 3500 Gain dB 20 17 13.5 10.5 20.5 17 14 S11 dB -18 -14 -18 -14 -20 -14 -16 S22 dB -15 -15 -15 -18 -16 -16 -18 Output IP31) dBm 24.5 26 26.5 23 29.5 29 -- Noise Figure dB 3.2 3.3 4.2 3.9 3.1 3.3 4.3 Output P1dB dBm 12.5 13 14 12 14.5 14.5 14.5 Current mA 37 53 V 3.2 3.3 Device Voltage ·5 ~ 140 MHz ·IF ·500 ~ 3500 MHz ·300 ~ 2170 MHz ·4000 ~ 6000 MHz ·6500 ~ 7800 MHz ·ATSC (57 ~ 213 MHz) ·DVB-T (V/U band) ·950 ~ 2150 MHz (SMATV) ·50 ~ 1000MHz (CATV / 1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1 MHz. 75ohms) ·50 ~ 2150MHz (SMATV / Product Specifications Parameters Testing Frequency Units MHz Gain dB S11 dB S22 Min dBm 16.5 17 -15 24 dB Output P1dB dBm 12 Current mA 32 V 26 3.3 3.5 13 37 42 3.2 Absolute Maximum Ratings Parameters 75ohms) -14 Noise Figure Device Voltage Max 2000 dB Output IP3 Typ Pin Configuration Rating Operating Case Temperature -40 to +85°C Pin No. Function Storage Temperature -40 to +150°C 3 RF IN Device Voltage +3.5 V 6 RF OUT / Bias Operating Junction Temperature +150°C Input RF Power (CW, 50ohm matched)* 25 dBm 1,2,4,5 GND * Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf 1/15 ASB Inc. · [email protected] · Tel: +82-42-528-7223 July 2012 ASW114 5-8000 MHz MMIC Amplifier Outline Drawing Symbols A A1 A2 b C D F E1 e e1 L Dimensions (In mm) MIN NOM MAX 0.90 1.00 1.10 0.025 0.062 0.10 0.875 0.937 1.00 0.20 0.30 0.40 0.10 0.125 0.15 1.90 2.00 2.10 1.15 1.25 1.35 2.00 2.10 2.20 -0.65BSC --1.30BSC --0.425REF -- Pin NO. Function Pin NO. Function. 1 GND 4 GND 2 GND 5 GND 3 RF IN 6 RF OUT / Bias Mounting Recommendation (in mm) Note: 1. The number and size of ground via holes in a circuit board is critical for thermal and RF grounding considerations. 2. We recommend that the ground via holes be placed on the bottom of lead pin 2 for better RF and thermal performance, as shown in the drawing at the left side. Ordering Information Part Number 2/15 Description ASB Inc. · [email protected] · Tel: +82-42-528-7223 July 2012 ASW114 5-8000 MHz MMIC Amplifier Frequency (MHz) APPLICATION CIRCUIT 5 140 Magnitude S21 (dB) 20.5 20.5 Magnitude S11 (dB) -18 -18 Magnitude S22 (dB) -14 -14 Output P1dB (dBm) 10 9.5 5 ~ 140 MHz Output IP31) (dBm) 19 18.5 +3.2 V Noise Figure (dB) 3.0 2.9 Device Voltage (V) 3.2 3.2 Current (mA) 37 37 1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1 MHz. 2 Board Layout (FR4, 40x40 mm , 0.8T) Schematic Vcc=3.2 V D1=5.6V Zener Diode C4=1 mF C3=100pF L1=54 mH (27mH+27mH) RF IN C1=1 mF ASW114 RF OUT C2=1 mF S-parameters & K-factor 25 0 -5 -10 15 S11 (dB) Gain (dB) 20 10 -15 -20 5 0 -25 0 100 200 300 400 500 -30 0 50 Frequency (MHz) 100 150 200 Frequency (MHz) 5 0 4 Stability Factor S22 (dB) -5 -10 3 2 -15 1 -20 0 0 100 200 300 400 500 0 500 Frequency (MHz) 3/15 1000 1500 2000 2500 3000 3500 Frequency (MHz) ASB Inc. · [email protected] · Tel: +82-42-528-7223 July 2012 ASW114 5-8000 MHz MMIC Amplifier Frequency (MHz) APPLICATION CIRCUIT IF +3.2 V 150 300 450 Magnitude S21 (dB) 21 21 21 20.5 Magnitude S11 (dB) -15 -18 -18 -18 Magnitude S22 (dB) -18 -16 -16 -16 Output P1dB (dBm) 12 12 12 12 Output IP3 (dBm) 22.5 22.5 23 23.5 Noise Figure (dB) -- -- -- -- Device Voltage (V) 3.2 3.2 3.2 3.2 Current (mA) 37 37 37 37 1) 70 ~ 450 MHz 70 1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1 MHz. 2 Schematic Board Layout (FR4, 40x40 mm , 0.8T) Vcc=3.2 V D1=5.6V Zener Diode C4=1 mF C3=100pF L1=680 nH C2=1000 pF RF IN C1=1000 pF RF OUT ASW114 S-parameters & K-factor 25 -5 -10 20 -15 S11 (dB) Gain (dB) 15 10 -20 -25 5 -30 0 -35 100 200 300 400 500 100 200 Frequency (MHz) 300 400 500 Frequency (MHz) -5 5 -10 4 Stability Factor S22 (dB) -15 -20 -25 3 2 1 -30 -35 0 100 200 300 400 500 0 500 Frequency (MHz) 4/15 1000 1500 2000 2500 3000 3500 Frequency (MHz) ASB Inc. · [email protected] · Tel: +82-42-528-7223 July 2012 ASW114 5-8000 MHz MMIC Amplifier APPLICATION CIRCUIT Frequency (MHz) 500 900 1750 2000 2400 2700 3500 Magnitude S21 (dB) 20.5 20 17.5 17 16 15.3 13.5 Magnitude S11 (dB) -15 -18 -14 -14 -15 -15 -18 Magnitude S22 (dB) -13 -15 -15 -15 -18 -18 -15 Output P1dB (dBm) 12.5 12.5 13 13 13.5 13.5 14 500 ~ 3500 MHz Output IP3 (dBm) 25 24.5 25 26 26.5 25.5 26.5 +3.2 V Noise Figure (dB) 3.2 3.2 3.2 3.3 3.3 3.4 4.2 1) Device Voltage (V) 3.2 Current (mA) 37 1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1 MHz. 2 Board Layout (FR4, 40x40 mm , 0.8T) Schematic Vcc=3.2 V D1=5.6V Zener Diode C4=1 mF C3=100pF L1=33 nH C2=100 pF RF IN C1=100 pF RF OUT ASW114 ` S-parameters & K-factor 25 0 o -40 c 25oc 85oc 20 -5 -40oc 25oc 85oc -10 S11 (dB) Gain (dB) 15 10 -15 -20 5 0 -25 0 500 1000 1500 2000 2500 3000 3500 4000 -30 0 500 1000 Frequency (MHz) -40oc 25oc 85oc 3000 3500 4000 4 Stability Factor -10 S22 (dB) 2500 5 -5 -15 -20 3 2 1 -25 0 500 1000 1500 2000 2500 3000 3500 4000 0 0 500 Frequency (MHz) 5/15 2000 Frequency (MHz) 0 -30 1500 1000 1500 2000 2500 3000 3500 4000 Frequency (MHz) ASB Inc. · [email protected] · Tel: +82-42-528-7223 July 2012 ASW114 5-8000 MHz MMIC Amplifier Gain vs. Temperature Current vs. Temperature 60 22 50 21 20 Gain (dB) Current (mA) 40 30 19 20 Frequency = 900 MHz 18 10 0 -60 -40 -20 0 20 40 60 80 17 -60 100 -40 -20 0 20 40 60 80 100 Temperature (oC) o Temperature ( C) Output IP3 vs. Frequency P1dB vs. Frequency 32 18 30 16 28 Output IP3 (dBm) P1dB (dBm) 14 12 10 o -40 c 25oc 85oc 8 26 -40oc 25oc 85oc 24 22 20 18 16 6 14 0 500 1000 1500 2000 2500 3000 3500 4000 0 500 1000 1500 2000 2500 3000 Frequency (MHz) Frequency (MHz) Output IP3 vs. Tone Power (Frequency = 2000MHz) 35 Output IP3 (dBm) 30 25 20 15 -40oc 25oc 85oc 10 5 -6 -4 -2 0 2 4 6 8 10 12 Pout per Tone (dBm) 6/15 ASB Inc. · [email protected] · Tel: +82-42-528-7223 July 2012 ASW114 5-8000 MHz MMIC Amplifier APPLICATION CIRCUIT Frequency (MHz) 500 900 1750 2000 2400 2700 3500 Magnitude S21 (dB) 21 20.5 18 17 16 15.5 14 Magnitude S11 (dB) -18 -20 -14 -14 -14 -13 -16 Magnitude S22 (dB) -13 -16 -14 -16 -18 -18 -18 Output P1dB (dBm) 14.5 14.5 14.5 14.5 14.5 14 14.5 500 ~ 3500 MHz Output IP31) (dBm) 30 29.5 29 29 29 27 -- +3.3 V Noise Figure (dB) 3.4 3.1 3.2 3.3 3.4 3.5 4.3 Device Voltage (V) 3.3 Current (mA) 53 1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1 MHz. 2 Board Layout (FR4, 40x40 mm , 0.8T) Schematic Vcc=3.3 V D1=5.6V Zener Diode C4=1 mF C3=100pF L1=33 nH C2=100 pF C1=100 pF RF IN RF OUT ASW114 ` S-parameters & K-factor 25 0 -5 -10 15 S11 (dB) Gain (dB) 20 10 -15 -20 5 0 -25 0 500 1000 1500 2000 2500 3000 3500 4000 -30 0 500 1000 Frequency (MHz) 1500 2000 2500 3000 3500 4000 Frequency (MHz) 0 5 -5 4 Stability Factor S22 (dB) -10 -15 -20 2 1 -25 -30 3 0 500 1000 1500 2000 2500 3000 3500 4000 0 0 500 Frequency (MHz) 7/15 1000 1500 2000 2500 3000 3500 4000 Frequency (MHz) ASB Inc. · [email protected] · Tel: +82-42-528-7223 July 2012 ASW114 5-8000 MHz MMIC Amplifier APPLICATION CIRCUIT 300 ~ 2700 MHz Frequency (MHz) 300 900 2000 2700 Magnitude S21 (dB) 19.3 19 16.4 15 Magnitude S11 (dB) -10 -15 -15 -18 Magnitude S22 (dB) -8 -13 -14 -16 Output P1dB (dBm) 11 11 11.5 12 Output IP3 (dBm) 17.0 17.5 18.5 22 Noise Figure (dB) 3.2 3 3 3.3 Device Voltage (V) 3.1 3.1 3.1 3.1 Current (mA) 25 25 25 25 1) +3.1 V 1) OIP3 is measured with two tones at an output power of -5 dBm/tone separated by 1 MHz. 2 Board Layout (FR4, 40x40 mm , 0.8T) Schematic Vcc=3.1 V D1=5.6V Zener Diode C4=1 mF C3=100pF L1=33 nH C2=100 pF C1=100 pF RF IN RF OUT ASW114 S-parameters & K-factor 25 0 -5 -10 15 S11 (dB) Gain (dB) 20 10 -15 -20 5 0 -25 0 500 1000 1500 2000 2500 3000 3500 4000 -30 0 500 1000 Frequency (MHz) -5 4 Stability Factor 5 S22 (dB) -10 -15 -20 2500 3000 3500 4000 3 2 1 0 500 1000 1500 2000 2500 3000 3500 4000 0 0 500 Frequency (MHz) 8/15 2000 Frequency (MHz) 0 -25 1500 1000 1500 2000 2500 3000 3500 4000 Frequency (MHz) ASB Inc. · [email protected] · Tel: +82-42-528-7223 July 2012 ASW114 5-8000 MHz MMIC Amplifier APPLICATION CIRCUIT Frequency (MHz) 4000 5000 5800 6000 Magnitude S21 (dB) 13 11.5 10.5 10.5 Magnitude S11 (dB) -18 -18 -14 -14 Magnitude S22 (dB) -14 -16 -18 -16 Output P1dB (dBm) 13 12 12 11 4000 ~ 6000 MHz Output IP3 (dBm) 25 25 23 22.5 +3.2 V Noise Figure (dB) 3.4 3.8 3.9 3.9 Device Voltage (V) 3.2 3.2 3.2 3.2 Current (mA) 37 37 37 37 1) 1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1 MHz. 2 Board Layout (FR4, 40x40 mm , 0.8T) Schematic Vcc=3.2 V D1=5.6V Zener Diode C4=1 mF C3=10 pF L1=6.8 nH C2=5 pF C1=5 pF RF IN RF OUT ASW114 S-parameters & K-factor 20 0 -5 -10 S11 (dB) Gain (dB) 15 10 -15 -20 5 -25 0 3000 3500 4000 4500 5000 5500 6000 6500 7000 -30 3000 3500 4000 Frequency (MHz) -5 4 Stability Factor 5 S22 (dB) -10 -15 -20 5500 6000 6500 7000 6000 7000 8000 3 2 1 3500 4000 4500 5000 5500 6000 6500 7000 0 0 1000 Frequency (MHz) 9/15 5000 Frequency (MHz) 0 -25 3000 4500 2000 3000 4000 5000 Frequency (MHz) ASB Inc. · [email protected] · Tel: +82-42-528-7223 July 2012 ASW114 5-8000 MHz MMIC Amplifier APPLICATION CIRCUIT Frequency (MHz) 6500 7800 Magnitude S21 (dB) 9.8 9.1 Magnitude S11 (dB) -11 -8 Magnitude S22 (dB) -18 -18 Output P1dB (dBm) 6 3 6500 ~ 7800 MHz Output IP3 (dBm) 15.5 14.0 +3.2 V Noise Figure (dB) 5.6 5.5 Device Voltage (V) 3.2 3.2 Current (mA) 37 37 1) 1) OIP3 is measured with two tones at an output power of -10 dBm/tone separated by 1 MHz. Vs=3.2 V 2 Board Layout (FR4, 40x40 mm , 0.8T) Schematic D1=5.6V Zener Diode C6=1 mF C5=10 pF L1=5.6 nH C2=4 pF RF IN C1=1 pF RF OUT ASW114 C4=0.3 pF C3=0.3 pF 12 0 10 -5 8 -10 S11 (dB) Gain (dB) S-parameters & K-factor 6 -15 4 -20 2 -25 0 6200 6400 6600 6800 7000 7200 7400 7600 7800 8000 -30 6200 6400 6600 Frequency (MHz) 6800 7000 7200 7400 7600 7800 Frequency (MHz) 0 5 -5 4 Stability Factor S22 (dB) -10 -15 -20 2 1 -25 -30 6200 3 6400 6600 6800 7000 7200 7400 7600 7800 8000 0 0 1000 Frequency (MHz) 10/15 2000 3000 4000 5000 6000 7000 8000 9000 Frequency (MHz) ASB Inc. · [email protected] · Tel: +82-42-528-7223 July 2012 ASW114 5-8000 MHz MMIC Amplifier Frequency (MHz) APPLICATION CIRCUIT 57 213 Magnitude S21 (dB) 20 20 Magnitude S11 (dB) -15 -15 Magnitude S22 (dB) -12 -13 ATSC Output P1dB (dBm) 10.5 10.5 57 ~ 213 MHz Output IP31) (dBm) 18.5 19 Noise Figure (dB) 2.7 2.8 Device Voltage (V) 3.1 3.1 Current (mA) 25 25 +3.1 V 1) OIP3 is measured with two tones at an output power of -5 dBm/tone separated by 1 MHz. 2 Board Layout (FR4, 40x40 mm , 0.8T) Schematic Vcc=3.1 V D1=5.6V Zener Diode C4=1 mF C3=100pF L1=680 nH C2=10 nF RF IN C1=10 nF RF OUT ASW114 25 0 20 -5 15 -10 S11 (dB) Gain (dB) S-parameters & K-factor 10 5 0 -15 -20 0 100 200 300 400 500 -25 0 100 200 Frequency (MHz) 300 400 500 Frequency (MHz) 5 0 4 Stability Factor S22 (dB) -5 -10 3 2 -15 1 -20 0 0 100 200 300 400 500 0 500 Frequency (MHz) 11/15 1000 1500 2000 2500 3000 3500 Frequency (MHz) ASB Inc. · [email protected] · Tel: +82-42-528-7223 July 2012 ASW114 5-8000 MHz MMIC Amplifier Frequency (MHz) APPLICATION CIRCUIT 170 860 Magnitude S21 (dB) 20 18.5 Magnitude S11 (dB) -15 -14 Magnitude S22 (dB) -12 -15 DVB-T ( V / U band) Output P1dB (dBm) 11 10 170 ~ 860 MHz Output IP31) (dBm) 20 19 Noise Figure (dB) 2.7 2.8 Device Voltage (V) 3.1 3.1 Current (mA) 25 25 +3.1 V 1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1 MHz. 2 Board Layout (FR4, 40x40 mm , 0.8T) Schematic Vcc=3.1 V D1=5.6V Zener Diode C4=1 mF C3=100pF L1=100 nH C2=1000 pF RF IN C1=1000 pF RF OUT ASW114 25 0 20 -5 15 -10 S11 (dB) Gain (dB) S-parameters & K-factor 10 5 0 -15 -20 0 200 400 600 800 1000 -25 0 200 400 Frequency (MHz) 5 -5 4 Stability Factor 0 S22 (dB) -10 -15 -20 -25 800 1000 3 2 1 0 0 200 400 600 800 1000 0 500 Frequency (MHz) 12/15 600 Frequency (MHz) 1000 1500 2000 2500 3000 3500 Frequency (MHz) ASB Inc. · [email protected] · Tel: +82-42-528-7223 July 2012 ASW114 5-8000 MHz MMIC Amplifier APPLICATION CIRCUIT Frequency (MHz) 950 1500 2000 Magnitude S21 (dB) 20.5 18.5 17 Magnitude S11 (dB) -20 -14 -14 Magnitude S22 (dB) -16 -14 -16 SMATV Output P1dB (dBm) 14.5 14.5 14.5 950 ~ 2150 MHz Output IP31) (dBm) 29.5 29 29 Noise Figure (dB) 3.1 3.2 3.3 +3.3 V Device Voltage (V) 3.3 Current (mA) 53 1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1 MHz. 2 Board Layout (FR4, 40x40 mm , 0.8T) Schematic Vcc=3.3 V D1=5.6V Zener Diode C4=1 mF C3=100pF L1=33 nH C2=100 pF C1=100 pF RF IN RF OUT ASW114 ` S-parameters & K-factor 25 0 -5 -10 15 S11 (dB) Gain (dB) 20 10 -15 -20 5 0 -25 0 500 1000 1500 2000 2500 3000 3500 4000 -30 0 500 1000 Frequency (MHz) 1500 2000 2500 3000 3500 4000 Frequency (MHz) 0 5 -5 4 Stability Factor S22 (dB) -10 -15 -20 2 1 -25 -30 3 0 500 1000 1500 2000 2500 3000 3500 4000 0 0 500 Frequency (MHz) 13/15 1000 1500 2000 2500 3000 3500 4000 Frequency (MHz) ASB Inc. · [email protected] · Tel: +82-42-528-7223 July 2012 ASW114 5-8000 MHz MMIC Amplifier Frequency (MHz) APPLICATION CIRCUIT 50 500 860 Magnitude S21 (dB) 19.5 19 18.5 Magnitude S11 (dB) -12.5 -17 -20 Magnitude S22 (dB) -15 -20 -15 CATV (75 ohms) Output P1dB (dBm) 11 11 11 50 ~ 1000 MHz Output IP31) (dBm) 17 19 20 Output IP21),2) (dBm) 16 24 26 Noise Figure (dB) 2.9 3.1 3.2 Device Voltage (V) 3.1 3.1 3.1 Current (mA) 25 25 25 +3.1 V 1) OIP3 and OIP2 are measured with two tones at an output power of +0 dBm/tone separated by 6 MHz. 2) OIP2 is measured at F1+F2 Frequency. 2 Board Layout (FR4, 40x40 mm , 0.8T) Schematic Vs=3.1 V C3=1 mF L1=820 nH RF OUT RF IN C1=1 mF ASW114 C2=1 mF S-parameters & K-factor 0 25 -5 -10 15 S11 (dB) Gain (dB) 20 10 -15 -20 5 0 -25 -30 0 200 400 600 800 1000 0 Frequency (MHz) 200 400 600 800 1000 Frequency (MHz) 0 -5 S22 (dB) -10 -15 -20 -25 -30 0 200 400 600 800 1000 Frequency (MHz) 14/15 ASB Inc. · [email protected] · Tel: +82-42-528-7223 July 2012 ASW114 5-8000 MHz MMIC Amplifier Frequency (MHz) 50 1000 2150 19.8 18.9 16.0 Magnitude S11 (dB) -11 -16 -20 Magnitude S22 (dB) -13 -16 -20 Magnitude S21 (dB) APPLICATION CIRCUIT SMATV (75 ohms) Output P1dB (dBm) 7 9 7 50 ~ 2150 MHz Output IP31) (dBm) 17 20 17 Output IP21),2) (dBm) 18 29 25 Noise Figure (dB) 3.2 3.0 3.2 Device Voltage (V) 3.1 3.1 3.1 Current (mA) 25 25 25 +3.1 V 1) OIP3 and OIP2 are measured with two tones at an output power of +0 dBm/tone separated by 6 MHz. 2) OIP2 is measured at F1+F2 Frequency. 2 Board Layout (FR4, 40x40 mm , 0.8T) Schematic Vs=3.1 V C4=1 mF L1=1 mH (LQH31CN1R0M03) C2=1 mF RF IN C1=1 mF RF OUT ASW114 C3=0.5 pF S-parameters & K-factor 0 25 -5 -10 15 S11 (dB) Gain (dB) 20 10 -15 -20 5 0 -25 -30 0 500 1000 1500 2000 2500 0 500 1000 1500 2000 2500 Frequency (MHz) Frequency (MHz) 0 -5 S22 (dB) -10 -15 -20 -25 -30 0 500 1000 1500 2000 2500 Frequency (MHz) 15/15 ASB Inc. · [email protected] · Tel: +82-42-528-7223 July 2012