2N2327 thur 2N2329 SILICON THYRISTORS All-diffused PNPN thyristors designed for grating operation in mA/µA signal or detection circuits Compliance to RoHS. MAXIMUM RATINGS (*) TJ=125°C unless otherwise noted, RGK=1000Ω Symbol Ratings VRSM(REP) Peak reverse blocking voltage (1) VRSM(NON- Non-repetitive peak blocking reverse voltage (t<5.0 ms) Forward Current RMS (all conduction angles) Peak Surge Current (One-Half Cycle, 60Hz) No Repetition Until Thermal Equilibrium is Restored. REP) IT(RMS) ITSM 2N2327 2N2328 2N2329 Unit 250 300 400 V 350 400 500 V 1.6 A 15 A PGM Peak Gate Power – Forward 0.1 W PG(AV) Average Gate Power - Forward 0.01 W IGM Peak Gate Current – Forward 0.1 A VGFM Peak Gate Voltage - Forward 6.0 V VGRM Peak Gate Voltage - Reverse 6.0 V TJ TSTG Operating Junction Temperature Range Storage Temperature Range -65 to +125 -65 to +150 °C 12/11/2012 COMSET SEMICONDUCTORS 1|3 2N2327 thur 2N2329 ELECTRICAL CHARACTERISTICS (*) TJ=25°C unless otherwise noted, RGK=1000Ω Symbol VDRM IRRM IDRM VT IGT VGT IH Ratings Peak Forward Blocking Voltage Min : (1) Peak Reverse Blocking Current (Rated VDRM, TJ =125°C) Peak Forward Blocking Current (Rated VDRM, TJ =125°C) Forward « on » Voltage IT =1.0 A Peak IT =1.0 A Peak TC =85°C Gate Trigger Current (2) Anode Voltage=6.0 Vdc, RL=100Ω Anode Voltage=6.0 Vdc, RL=100Ω TC=-65°C Gate Trigger Voltage Anode Voltage=6.0 V, RL=100Ω Anode Voltage=6.0 V, RL=100Ω TC=-65°C VDRM = Rated, RL=100Ω TJ=125°C Holding Current Anode Voltage=6.0 V Anode Voltage=6.0 V TC=-65°C Anode Voltage=6.0 V TC=125°C 2N2327 2N2328 2N2329 Unit 250 300 400 V µA Max : 100 µA Max : 100 Max : 1.5 V Max : 2.0 Max : 200 µA Max : 350 Max : 0.8 V Max : 1.0 Min : 0.1 Max : 2.0 mA Max : 3.0 Min : 0.15 (*) JEDEC Registered Values (1) VRSM and VDRM can be applied for all types on a continuous dc basis without incurring damage. (2) RGK current is not included in measurement. 12/11/2012 COMSET SEMICONDUCTORS 2|3 2N2327 thur 2N2329 MECHANICAL DATA CASE TO-39 DIMENSIONS (mm) min max A 8.50 9.39 B 7.74 8.50 C 6.09 6.60 D 0.40 0.53 E - 0.88 F 2.41 2.66 G 4.82 5.33 H 0.71 0.86 J 0.73 1.02 K 12.70 - L 42° 48° Pin 1 : kathode Pin 2 : Gate Pin 3 : Anode Case : anode Revised October 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 12/11/2012 [email protected] COMSET SEMICONDUCTORS 3|3