COMSET 2N3020

NPN 2N3019 – 2N3020
SILICON PLANAR EPITAXIAL TRANSISTORS
The 2N3019 and 2N3020 are NPN transistors mounted in TO-39 metal case .
They are intended for high-current, high-frequency amplifier applications.
They feature high gain and low saturation voltages.
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
PD
Total Power Dissipation
@ Tamb = 25°
PD
Total Power Dissipation
@ Tcase= 25°
TJ
Junction Temperature
TStg
Storage Temperature range
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
Value
Unit
80
V
140
V
7
V
1
A
0.8
Watts
5
200
°C
-65 to +200
°C
Value
Unit
35
°C/W
219
°C/W
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-a
Thermal Resistance, Junction to ambient in free
air
RthJ-c
Thermal Resistance, Junction to case
COMSET SEMICONDUCTORS
2N3019
2N3020
2N3019
2N3020
1/4
NPN 2N3019 – 2N3020
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
ICBO
IEBO
VCEO
VCBO
VEBO
hFE
VCE(SAT)
VBE(SAT)
Ratings
Test Condition(s)
VCB =950 V
IE =0
Collector Cutoff Current
VCB =90 V, IE =0
Tj =150°C
VEB =5 V
Emitter Cutoff Current
IC =0
Collector Emitter Breakdown IC =10 mA
Voltage
IB =0
Collector Base Breakdown
IC =100 µA
Voltage
IE =0
Emitter Base Breakdown
IE =100 µA
Voltage
IC =0
IC =0.1 mA
VCE =10 V
IC =10 mA
VCE =10 V
IC =150 mA
VCE =10 V
DC Current Gain (*)
IC =500 mA
VCE =10 V
IC =1 A
VCE =10 V
IC =150 mA
VCE =10 V
Tamb = -55°C
IC =150 mA
Collector-Emitter saturation IB =15 mA
Voltage (*)
IC =500 mA
IB =50 mA
Base-Emitter saturation
IC =150 mA
IB =15 mA
Voltage (*)
16/10/2012
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3019
2N3020
2N3019
2N3020
2N3019
COMSET SEMICONDUCTORS
Min
Typ
Max
Unit
-
-
10
nA
-
-
10
µA
-
-
10
nA
80
-
-
V
140
-
-
V
7
-
-
V
50
30
90
40
100
40
50
30
-
100
120
300
120
100
15
-
-
40
-
-
-
-
0.2
-
-
0.5
-
-
1.1
-
V
2/4
NPN 2N3019 – 2N3020
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
fT
Transition frequency
hfe
Small Signal Current Gain
NF
Noise Figure
CCBO
Collector-Base capacitance
CEBO
Emitter-Base capacitance
rbb’Cb’c
Feedback Time Constant
IC =50 mA
VCE =10 V
f = 20 MHz
IC =1 mA
VCE =5 V
f = 1 kHz
IC=-100 µA
VCE =10 V
f = 1 kHz
Rg = 1kΩ
IE = 0
VCB=10 V
f = 1 MHz
IC = 0
VEB=0.5 V
f = 1 MHz
IC =10 mA
VCE =10 V
f = 4 MHz
Min
Typ
Max
Unit
2N3019
100
-
-
2N3020
80
-
-
2N3019
80
-
400
2N3020
30
-
200
2N3019
-
-
4
dB
-
-
12
pF
-
-
60
pF
-
-
400
ps
MHz
-
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
(*) Pulse conditions : tp < 300 µs, δ =2%
16/10/2012
COMSET SEMICONDUCTORS
3/4
NPN 2N3019 – 2N3020
MECHANICAL DATA CASE TO-39
DIMENSIONS (mm)
min
max
A
8.50
9.39
B
7.74
8.50
C
6.09
6.60
D
0.40
0.53
E
-
0.88
F
2.41
2.66
G
4.82
5.33
H
0.71
0.86
J
0.73
1.02
K
12.70
-
L
42°
48°
Pin 1 :
Emitter
Pin 2 :
Base
Pin 3 :
Collector
Case :
Collector
Revised september 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and
all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical
components in life support devices or systems.
www.comsetsemi.com
16/10/2012
[email protected]
COMSET SEMICONDUCTORS
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