CREE CXXXTR5050M

TR5050M™ LEDs
CxxxTR5050M-Sxx000
Data Sheet
Cree’s TR5050M LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials
with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for the TV-backlighting
and general-illumination markets. The TR5050M LEDs are among the brightest in the top-view market while delivering
a low forward voltage, resulting in a very bright and highly efficient solution. The metal backside allows for eutectic
die attach and enables superior performance from improved thermal management. The design is optimally suited for
industry-standard top-view packages.
FEATURES
APPLICATIONS
•
•
Rectangular LED RF Performance
–
•
450 nm – 180 mW min
Large LCD Backlighting
–
Television
High-Reliability – Eutectic, Solder Paste or Preforms
•
General Illumination
Attach
•
Medium LCD Backlighting
•
Low Forward Voltage – 3.3 V Typical at 120 mA
–
Portable PCs
•
Maximum DC Forward Current - 200 mA
–
Monitors
•
Class 2 ESD Rating
•
LED Video Displays
•
InGaN Junction on Thermally Conductive SiC
•
White LEDs
Substrate
CxxxTR5050M-Sxx000 Chip Diagram
.CPR3EX Rev
Data Sheet:
Top View
Die Cross Section
Cathode (-)
98-μm diameter
Anode (+)
90-μm diameter
Bottom View
TR5050M LED
500 x 500 μm
Bottom Surface
320 x 320 μm
Metal backside
288 x 288 μm
t = 175 μm
Subject to change without notice.
www.cree.com
1
Maximum Ratings at TA = 25°C Notes 1&3
DC Forward Current
CxxxTR5050M-Sxx000
200 mA
Note 4
Peak Forward Current (1/10 duty cycle @ 1 kHz)
250 mA
LED Junction Temperature
150°C
Reverse Voltage
5V
Operating Temperature Range
-40°C to +100°C
Storage Temperature Range
-40°C to +100°C
Electrostatic Discharge Threshold (HBM)
1000 V
Note 2
Electrostatic Discharge Classification (MIL-STD-883E)
Class 2
Note 2
Typical Electrical/Optical Characteristics at TA = 25°C, If = 120 mA
Part Number
Note 3
Forward Voltage (Vf, V)
C450TR5050M-Sxx000
Reverse Current
[I(Vr=5V), μA]
Full Width Half Max
(λD, nm)
Min.
Typ.
Max.
Max.
Typ.
2.7
3.3
3.5
2
20
Mechanical Specifications
CxxxTR5050M-Sxx000
Dimension
Tolerance
P-N Junction Area (μm)
Description
426 x 443
±35
Chip Area (μm)
500 x 500
±35
175
±15
Au Bond Pad Diameter Anode (μm)
Chip Thickness (μm)
90
±10
Au Bond Pad Thicknesses (μm)
1.0
±0.5
Au Bond Pad Diamater Cathode (μm)
98
±10
288 x 288
±25
Bottom Contact Metal (um)
Max If (mA)
Max Vf @Max If (V)
Bottom Contact Metal Thickness (μm)
Max Tj (Deg C)
Max Power (W)
200
3.5
150
0.7
Bottom Area (μm)
Notes:
1.
2.
3.
4.
320 x 320
±45
3.0
±1.0
Maximum ratings are package-dependent.
The (C/W)
above ratings 10
were determined 20
using lamps in chip-on-MCPCB
(metal core PCB) packages for
Thermal Resistance
30
characterization. Ratings for other packages may differ. Junction temperature should be characterized in a specific package to determine limitations.
Assembly processing temperature must
not exceed 325°C (<Rth
5 seconds).
(j-A) =
If @ Tamb
Tamb
Tamb
Product resistance to electrostatic discharge
200 (ESD) according to the
25 HBM is measured
25 by simulating ESD
25 using a rapid avalanche energy test (RAET).
The RAET procedures are designed to approximate
the maximum
200
143ESD ratings shown.
136
129
All products conform to the listed minimum
for electrical
when assembled and operated at 120
0 and maximum specifications
150
150and optical characteristics
150
mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values
expected by manufacturer in large quantities and are provided for information only. All measurements were made using lamps in T-1 3/4 packages
(with Hysol OS4000 epoxy encapsulant and clear epoxy die attach). Optical characteristics measured in an integrating sphere using Illuminance E.
The maximum forward current is determined by the thermal resistance between the LED junction and ambient. It is crucial for the end-product to be
designed in a manner that minimizes the thermal resistance from the LED junction to ambient in order to optimize product performance.
Maximum Forward Current (mA)
250
200
150
Rth j-a = 10
Rth j-a = 20
Rth j-a = 30
Rth j-a = 40
100
C/W
C/W
C/W
C/W
50
0
50
75
100
125
150
175
Ambient Temperature (C)
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and TM and TR5050M are trademarks of Cree, Inc.
2
CPR3EX Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Standard Bins for CxxxTR5050M-Sxx000
Radiant Flux (mW)
LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die
from only one bin. Sorted die kit (CxxxTR5050M-Sxxxx) orders may be filled with any or all bins (CxxxTR5050M-xxxx)
contained in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 120 mA.
450TR5050M-S18000
C450TR5050M-0213
C450TR5050M-0214
C450TR5050M-0215
C450TR5050M-0216
C450TR5050M-0209
C450TR5050M-0210
C450TR5050M-0211
C450TR5050M-0212
C450TR5050M-0205
C450TR5050M-0206
C450TR5050M-0207
C450TR5050M-0208
220.0
200.0
180.0
445
447.5
450
452.5
455
Dominant Wavelength (nm)
Note: The radiant-flux values above are representative of the die in a Cree 5-mm lamp.
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and TM and TR5050M are trademarks of Cree, Inc.
3
CPR3EX Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Relative Light
100%
50%
0%
Characteristic Curves
0
50
100
150
200
If (mA)
These are representative measurements for the TR5050M LED product. Actual curves will vary slightly for the various
radiant flux and dominant wavelength bins.
Forward Current vs. Forward Voltage
250
Forward Current vs. Forward Voltage
250
If (mA)Shift (nm)
Dominant Wavelength
200
If (mA)
Wavelength Shift vs. Forward Current
3
150
100
50
0
0
1
2
3
4
200
2
150
1
100
0
-1
50
-2
0
-3
5
0
1
0
2
3
4
Vf100
(V)
50
Vf (V)
150
5
200
If (mA)
Dominant Wavelength Shift vs Junction Temp
5
200%
4
0.000
3
-0.050
150%
2
-0.100
1
-0.150
100%
0
-0.200
-1
-0.250
50%
-2
-0.300 25
Voltage Shift vs Junction Temperature
Relative Intensity vs. Forward Current
Voltage Shift vs Junction Temperature
0.000
-0.050
-0.100
Voltage Shift (V)
Voltage
Shift
(V)
Dominant
Relative
LightWavelength
Intensity Shift (nm)
6
50
75
100
125
150
-0.400 0
25
50
100
50
75
-0.250
-0.300
-0.400
150
If (mA) 100
-0.200
-0.350
Junction Temperature (°C)
-0.350
0%
-0.150
25
200
125
50
75
100
125
150
Junction Temperature (°C)
150
Junction Temperature (°C)
Relative Light Intensity Vs Junction Temperature
Dominant Wavelength Shift vs Junction Temp
6
Dominant Wavelength Shift (nm)
Relative Light
Dominant Wavelength
ShiftIntensity
(nm)
100%
Wavelength Shift vs. Forward Current
95%
3
90%
2
85%
1
80%
0
75%
-1
70%
-2 25
50
75
100
125
5
4
3
2
1
0
-1
-2
150
25
Junction Temperature (°C)
-3
0
50
100
50
75
100
125
150
Junction Temperature (°C)
150
200
If (mA)
Relative Light Intensity Vs Junction Temperature
100%
4
CPR3EX Rev. -
t Intensity
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
95%
Cree logo are registered trademarks, and TM and TR5050M are trademarks of Cree, Inc.
90%
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Radiation Pattern
This is a representative radiation pattern for the TR5050M LED product. Actual patterns will vary slightly for each chip.
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and TM and TR5050M are trademarks of Cree, Inc.
5
CPR3EX Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com