DCR590G65 Phase Control Thyristor DS5870-1.4 June 2008 (LN26249) FEATURES KEY PARAMETERS Double Side Cooling High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt APPLICATIONS 6500V 595A 6600A 1500V/µs 200A/us * Higher dV/dt selections available High Power Drives High Voltage Power Supplies Static Switches VOLTAGE RATINGS Part and Ordering Number Repetitive Peak Voltages VDRM and VRRM V DCR590G65* DCR590G60 DCR590G55 6500 6000 5500 Conditions Tvj = -40° C to 125° C, IDRM = IRRM = 100mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively Outline type code: G (See Package Details for further information) Lower voltage grades available. 0 0 *6200V @ -40 C, 6500V @ 0 C Fig. 1 Package outline ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR590G65 Note: Please use the complete part number when ordering and quote this number in any future correspondence relating to your order. 1/10 www.dynexsemi.com DCR590G65 SEMICONDUCTOR CURRENT RATINGS Tcase = 60° C unless stated otherwise Parameter Symbol Test Conditions Max. Units 595 A Double Side Cooled IT(AV) Mean on-state current IT(RMS) RMS value - 935 A Continuous (direct) on-state current - 912 A IT Half wave resistive load SURGE RATINGS Parameter Symbol ITSM 2 It Surge (non-repetitive) on-state current Test Conditions Max. Units 10ms half sine, Tcase = 125° C 6.6 kA VR = 0 0.22 MA s Min. Max. Units 2 I t for fusing 2 THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Rth(c-h) Tvj Parameter Thermal resistance – junction to case Thermal resistance – case to heatsink Virtual junction temperature Test Conditions Double side cooled DC - 0.0268 ° C/W Single side cooled Anode DC - 0.0527 ° C/W Cathode DC - 0.0652 ° C/W Clamping force 11.5kN Double side - 0.0072 ° C/W (with mounting compound) Single side - 0.0144 ° C/W On-state (conducting) - 135 °C Reverse (blocking) - 125 °C Tstg Storage temperature range -55 125 °C Fm Clamping force 10 13 kN 2/10 www.dynexsemi.com DCR590G65 SEMICONDUCTOR DYNAMIC CHARACTERISTICS Symbol IRRM/IDRM Parameter Test Conditions Min. Max. Units Peak reverse and off-state current At VRRM/VDRM, Tcase = 125° C - 100 mA dV/dt Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 125° C, gate open - 1500 V/µs dI/dt Rate of rise of on-state current From 67% VDRM to 2x IT(AV) Repetitive 50Hz - 100 A/µs Gate source 30V, 10, Non-repetitive - 200 A/µs tr < 0.5µs, Tj = 125° C VT(TO) rT tgd Threshold voltage – Low level 50A to 400A at Tcase = 125° C - 0.912 V Threshold voltage – High level 400A to 1600A at Tcase = 125° C - 1.108 V On-state slope resistance – Low level 50A to 400A at Tcase = 125° C - 2.157 m On-state slope resistance – High level 400A to 1600A at Tcase = 125° C - 1.647 m VD = 67% VDRM, gate source 30V, 10 - 3 µs 550 1100 µs Delay time tr = 0.5µs, Tj = 25° C tq Turn-off time IT = 500A , Tj = 125° C, VR = 100V, dI/dt = 5A/µs, dVDR/dt = 20V/µs linear QS Stored charge IT = 500A, Tj = 125° C, dI/dt = 5A/µs, 1800 2600 µC IRR Reverse recovery current IT = 500A, Tj = 125° C, dI/dt = 5A/µs, 77 90 A IL Latching current Tj = 25° C, VD = 5V - 3 A IH Holding current Tj = 25° C, RG-K = , ITM = 500A, IT = 5A - 300 mA 3/10 www.dynexsemi.com DCR590G65 SEMICONDUCTOR GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Test Conditions Max. Units VGT Gate trigger voltage VDRM = 5V, Tcase = 25° C 1.5 V VGD Gate non-trigger voltage At 50% VDRM, Tcase = 125° C 0.4 V IGT Gate trigger current VDRM = 5V, Tcase = 25° C 250 mA IGD Gate non-trigger current At 50% VDRM, Tcase = 125° C 15 mA CURVES Instantaneous on-state current, IT - (A) 1600 1200 800 25°C min 25°C max 125°C min 125°C max 400 0 1.0 2.0 3.0 4.0 Instantaneous on-state voltage, VT - (V) Fig.2 Maximum & minimum on-state characteristics VTM EQUATION VTM = A + Bln (IT) + C.IT+D.IT Where A = 0.542452 B = 0.065613 C = 0.001318 D = 0.015356 these values are valid for Tj = 125° C for IT 50A to 1600A 4/10 www.dynexsemi.com DCR590G65 SEMICONDUCTOR 16 130 15 120 Maximum case temperature, T case ( oC ) 14 Mean power dissipation - (kW) 13 12 11 10 9 8 7 180 120 90 60 30 6 5 4 3 2 1 180 120 90 60 30 110 100 90 80 70 60 50 40 30 20 10 0 0 0 500 1000 1500 2000 0 100 200 300 400 500 600 700 800 900 Mean on-state current, IT(AV) - (A) Mean on-state current, IT(AV) - (A) Fig.3 On-state power dissipation – sine wave Fig.4 Maximum permissible case temperature, double side cooled – sine wave 180 120 90 60 30 120 110 100 12 11 Mean power dissipation - (kW) Maximum heatsink temperature, T Heatsink - ( oC ) 130 90 80 70 60 50 40 30 20 10 10 9 8 7 6 5 d.c. 180 120 90 60 30 4 3 2 1 0 0 100 200 300 400 500 600 700 800 Mean on-state current, IT(AV) - (A) Fig.5 Maximum permissible heatsink temperature, double side cooled – sine wave 0 0 500 1000 1500 2000 2500 Mean on-state current, IT(AV) - (A) Fig.6 On-state power dissipation – rectangular wave 5/10 www.dynexsemi.com DCR590G65 SEMICONDUCTOR 130 d.c. 180 120 90 60 30 120 110 100 90 d.c. 180 120 90 60 30 120 Maximum heatsik temperature Theatsink - (oC) Maximum permissible case temperature , T case - (°C) 130 80 70 60 50 40 30 20 10 110 100 90 80 70 60 50 40 30 20 10 0 0 0 200 400 600 800 1000 1200 1400 0 200 400 Fig.7 Maximum permissible case temperature, double side cooled – rectangular wave 1000 1200 Anode side cooled Double Side Cooled Anode Cooled 2 5.4226 3 16.9074 0.0066401 0.0457025 0.4962482 1.8248 2.3214 5.2661 10.2686 34.8031 0.0066948 0.045528 0.3484209 4.582 2.4895 5.9105 7.4256 49.3432 0.0070404 0.052895 0.3933903 4.2295 Ri (°C/kW) Ti (s) Cathode side cooled 1 2.2995 Ri (°C/kW) Ti (s) 70 Themal impedance Z th(j-c) ( °C/kW ) 800 Fig.8 Maximum permissible heatsink temperature, double side cooled – rectangular wave Double side cooled 60 600 Mean on-state current, IT(AV) - (A) Mean on-state current, IT(AV) - (A) Ri (°C/kW) Ti (s) 4 2.1488 Cathode Cooled Zth = [Ri x ( 1-exp. (t/ti))] 50 [1] 40 Rth(j-c) Conduction 30 Tables show the increments of thermal resistance R th(j-c) when the device operates at conduction angles other than d.c. 20 10 0 0.001 0.01 0.1 1 Time ( s ) 10 100 ° 180 120 90 60 30 15 Double side cooling Zth (z) sine. 4.15 4.90 5.74 6.53 7.16 7.46 rect. 2.72 4.02 4.79 5.65 6.64 7.18 ° 180 120 90 60 30 15 Anode Side Cooling Zth (z) sine. 4.15 4.89 5.73 6.52 7.15 7.44 rect. 2.72 4.02 4.78 5.65 6.62 7.16 Cathode Sided Cooling Zth (z) ° 180 120 90 60 30 15 sine. 4.13 4.87 5.69 6.46 7.07 7.36 rect. 2.71 4.00 4.76 5.60 6.56 7.09 Fig.9 Maximum (limit) transient thermal impedance – junction to case (° C/kW) 6/10 www.dynexsemi.com DCR590G65 SEMICONDUCTOR 20 18 4 3 2 1 16 ITSM 14 0.3 2 12 10 I2t 8 0.2 6 4 0.1 2 0 0 1 10 1 100 Pulse width, tP - (ms) Fig.10 Multi-cycle surge current 4500 0 100 10 Number of cycles Fig.11 Single-cycle surge current 250 QSmax = 1596.04*(di/dt)0.3032 IRRmax = 30.906*(di/dt)0.6633 Reverse recovery current, IRR - (A) 4000 3500 Stored charge, QS - (uC) 0.4 2 5 Surge current, ITSM - (kA) Conditions: Tcase = 125°C VR =0 Pulse width = 10ms 6 Surge current, ITSM- (kA) 0.5 Conditions: Tcase= 125°C VR = 0 half-sine wave I t (MA s) 7 3000 2500 2000 QSmin = 954.26*(di/dt)0.3943 1500 1000 200 150 100 IRRmin = 25.12*(di/dt)0.6961 50 500 0 0 0 5 10 15 20 25 Rate of decay of on-state currrent, dI/dt - (A/us) Fig.12 Stored charge vs di/dt 0 5 10 15 20 25 Rate of decay of on-state current, di/dt - (A/us) Fig.13 Reverse recovery current vs di/dt 7/10 www.dynexsemi.com DCR590G65 SEMICONDUCTOR 10 9 Pulse Width us 100 200 500 1000 10000 Gate trigger voltage, VGT - (V) 8 7 Pulse Power PGM (Watts) Frequency Hz 50 100 150 150 150 150 150 150 150 100 20 - 400 150 125 100 25 - Upper Limit 6 5 Preferred gate drive area 4 3 2 o 1 Tj = -40oC Tj = 25oC Lower Limit Tj = 125 C 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Gate trigger current IGT, - (A) Fig14 Gate Characteristics 30 Lower Limit Upper Limit 5W 10W 20W 50W 100W 150W -40C Gate trigger voltage, VGT - (V) 25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 9 10 Gate trigger current, IGT - (A) Fig. 15 Gate characteristics 8/10 www.dynexsemi.com DCR590G65 SEMICONDUCTOR PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 3rd ANGLE PROJECTION DO NOT SCALE IF IN DOUBT ASK HOLE Ø3.60 X 2.00 DEEP (IN BOTH ELECTRODES) 20° OFFSET (NOM.) TO GATE TUBE Device DCR803SG18 DCR806SG28 DCR818SG48 DCR820SG65 DCR1080G22 DCR960G28 DCR780G42 DCR690G52 DCR590G65 DCR470G85 Maximum Minimum Thickness Thickness (mm) (mm) 26.415 25.865 26.49 25.94 26.84 26.17 27.1 26.55 26.415 25.865 26.49 25.94 26.72 26.17 26.84 26.29 27.1 26.55 27.46 26.91 Ø57.0 MAX Ø33.95 NOM Ø1.5 CATHODE GATE ANODE Ø33.95 NOM FOR PACKAGE HEIGHT SEE TABLE Clamping force: 11.5 kN ±10% Lead length: 420mm Lead terminal connector: M4 ring Package outline type code: G Fig.16 Package outline 9/10 www.dynexsemi.com DCR590G65 SEMICONDUCTOR POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln Lincolnshire, LN6 3LF. United Kingdom. Tel: +44(0)1522 500500 Fax: +44(0)1522 500550 CUSTOMER SERVICE Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020 Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user’s responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company’s conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 10/10 www.dynexsemi.com