DYNEX DG646BH25

DG646BH25
Gate Turn-off Thyristor
DS4092-3.1 October 2005 (LN24294)
KEY PARAMETERS
FEATURES
•
Double Side Cooling
•
High Reliability In Service
•
High Voltage Capability
•
Fault Protection Without Fuses
•
High Surge Current Capability
•
Turn-off Capability Allows Reduction in
VDRM
IT(AV)
ITCM
dVD/dt
dIT/dt
2500V
867A
2500A
1000V/µs
300A/µs
Equipment Size and Weight. Low Noise
Emission Reduces Acoustic Cladding Necessary
For Environmental Requirements
APPLICATIONS
•
Variable speed AC motor drive inverters (VSDAC)
•
Uninterruptable Power Supplies
•
•
•
•
•
High Voltage Converters
Choppers
Welding
Induction Heating
DC/DC Converters
Outline type code: H
(See Package Details for further information)
Fig. 1 Package outline
VOLTAGE RATINGS
Type Number
Repetitive Peak Off-state
Voltage VDRM (V)
Repetitive Peak Reverse
Voltage VRRM (V)
DG646BH25
2500
16
Conditions
Tvj = 125°C, I DM =50mA,
IRRM = 50mA
CURRENT RATINGS
Symbol
Parameter
ITCM
Repetitive peak controllable on-state current
IT(AV)
Mean on-state current
IT(RMS)
RMS on-state current
Conditions
VD = VDRM, Tj = 125°C,
dIGQ/dt = 40A/µs, CS = 6.0 µF
THS = 80°C, Double side cooled.
Half sine 50Hz
THS = 80°C, Double side cooled.
Half sine 50Hz
Max.
Units
2500
A
867
A
1360
A
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DG646BH25
SEMICONDUCTOR
SURGE RATINGS
Symbol
ITSM
2
It
Parameter
Test Conditions
Max.
Units
Surge (non repetitive) on-state current
10ms half sine. Tj = 125°C
18.0
kA
10ms half sine. Tj = 125°C
16.2
MA s
VD = 1500V, IT = 2000A, Tj = 125°C, I FG > 30A,
Rise time > 1.0 µs
300
A/µs
To 66% VDRM; RGK ≤ 1.5Ω, Tj = 125°C
135
V/µs
To 66% VDRM; VRG ≤ -2V, Tj = 125°C
1000
V/µs
IT = 2000A, VDM = 2500V, Tj = 125°C, di GQ/dt = 40A/µs,
CS = 2.0µF
200
nH
2
I t for fusing
diT/dt
Critical rate of rise of on-state current
dVD/dt
Rate of rise of off-state voltage
LS
Peak stray inductance in snubber
circuit
2
GATE RATINGS
Symbol
Parameter
Test Conditions
Min.
Max.
Units
This value may be exceeded during turn-off
-
16
V
20
100
A
Average forward gate power
-
15
W
Peak reverse gate power
-
19
kW
VRGM
Peak reverse gate voltage
IFGM
Peak forward gate current
PFG(AV)
PRGM
diGQ/dt
Rate of rise of reverse gate current
30
60
A/µs
tON(min)
Minimum permissible on time
50
-
µs
tOFF(min)
Minimum permissible off time
100
-
µs
THERMAL AND MECHANICAL RATINGS
Symbol
Rth(j-hs)
Parameter
Thermal resistance – junction to
heatsink surface
Test Conditions
Double side cooled
Min.
Max.
Units
DC
-
0.018
°C/W
Anode DC
-
0.03
°C/W
Cathode DC
-
0.045
°C/W
Per contact
-
0.006
°C/W
-
125
°C
Single side cooled
Rth(c-hs)
Contact thermal resistance
Clamping force 20.0kN
With mounting compound
Tvj
Virtual junction temperature
On-state (conducting)
TOP/Tstg
Operating junction/storage
temperature range
-40
125
°C
Clamping force
18.0
22.0
kN
Fm
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DG646BH25
SEMICONDUCTOR
CHARACTERISTICS
Tj = 125°C unless stated otherwise
Symbol
Parameter
Test Conditions
Min
.
Max.
Units
VTM
On-state voltage
At 2000A peak, IG(ON) = 7A dc
-
2.6
V
IDM
Peak off-state current
VDRM = 2500V, VRG = 0V
-
100
mA
IRRM
Peak reverse current
At VRRM
-
50
mA
VGT
Gate trigger voltage
VD = 24V, IT = 100A, Tj = 25°C
-
1.0
V
IGT
Gate trigger current
VD = 24V, IT = 100A, Tj = 25°C
-
3.0
A
IRGM
Reverse gate cathode current
VRGM = 16V, No gate/cathode resistor
-
50
mA
EON
Turn-on energy
-
1188
mJ
-
1.2
µs
VD = 1500V
IT = 2000A, dIT/dt = 300A/µs
IFG = 30A, rise time < 1.0µs
td
Delay time
tr
Rise time
-
3.0
µs
Turn-off energy
-
4000
mJ
-
17.0
µs
-
2.0
µs
-
19.0
µs
-
6600
µC
EOFF
tgs
Storage time
IT = 2000A,
tgf
Fall time
VDM = 2500V,
tgq
Gate controlled turn-off time
Snubber capacitor CS = 2.0µF,
QGQ
Turn-off gate charge
diGQ/dt = 40A/µs
QGQT
Total turn-off gate charge
-
13200
µC
IGQM
Peak reverse gate current
-
650
A
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DG646BH25
SEMICONDUCTOR
Fig.2 Maximum gate trigger voltage/current vs junction
temperature
Fig.3 On-state characteristics
Maximum permissible turn-off current ITCM - (A)
3000
2500
2000
1500
Conditions:
125oC
VDM = VDRM
dIGQ/dt = 40A/us
1000
500
0
0
1
2
3
4
5
6
Snubber Capacitance Cs - (uF)
Fig.4 Maximum dependence of ITCM on CS
Fig.5 Steady state sinusoidal wave conduction loss –
double side cooled
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DG646BH25
SEMICONDUCTOR
Fig.6 Surge (non-repetitive) on-state current vs time
Fig.7 Steady state rectangular wave conduction loss –
double side cooled
Fig.8 Maximum (limit) transient thermal impedance – junction to case (°C/kW)
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DG646BH25
SEMICONDUCTOR
Fig.9 Turn-on energy vs on-state current
Fig.10 Turn-on energy vs peak forward gate current
Fig.11 Turn-on energy vs on-state current
Fig.12 Turn-on energy vs peak forward gate current
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DG646BH25
SEMICONDUCTOR
Fig.13 Turn-on energy vs rate of rise of on-state current
Fig.14 Delay time & rise time vs turn-on current
Fig.15 Delay time & rise time vs peak forward gate
current
Fig.16 Turn-off energy vs on-state current
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DG646BH25
SEMICONDUCTOR
Fig.17 Turn-off energy vs rate of rise of reverse gate
current
Fig.18 Turn-off energy vs on-state current
Fig.19 Turn-off energy vs rate of rise of reverse gate
current
Fig.20 Turn-off energy vs on-state current
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DG646BH25
SEMICONDUCTOR
Fig.21 Gate storage time vs on-state current
Fig.22 Gate storage time vs rate of rise of reverse gate
current
Fig.23 Gate fall time vs on-state current
Fig.24 Gate fall time vs rate of rise of reverse gate
current
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DG646BH25
SEMICONDUCTOR
Fig.25 Peak reverse gate current vs turn-off current
Fig.26 Peak reverse gate current vs rate of rise of
reverse gate current
Fig.27 Turn-off gate charge vs on-state current
Fig.28 Turn-off gate charge vs rate of rise of reverse gate
current
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DG646BH25
SEMICONDUCTOR
Fig.29 Rate of rise of off-state voltage vs gate cathode resistance
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DG646BH25
SEMICONDUCTOR
Fig.30 General switching waveforms
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DG646BH25
SEMICONDUCTOR
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Nominal weight: 820g
Clamping force: 20kN ±10%
Lead length: 505mm
Package outline type code: H
Fig.31 Package outline
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DG646BH25
SEMICONDUCTOR
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise
the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is
available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all
semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be
followed.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln
Lincolnshire, LN6 3LF. United Kingdom.
Tel: +44(0)1522 500500
Fax: +44(0)1522 500550
CUSTOMER SERVICE
Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020
 Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR
RESALE. PRODUCED IN UNITED KINGDOM.
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