DG646BH25 Gate Turn-off Thyristor DS4092-3.1 October 2005 (LN24294) KEY PARAMETERS FEATURES • Double Side Cooling • High Reliability In Service • High Voltage Capability • Fault Protection Without Fuses • High Surge Current Capability • Turn-off Capability Allows Reduction in VDRM IT(AV) ITCM dVD/dt dIT/dt 2500V 867A 2500A 1000V/µs 300A/µs Equipment Size and Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requirements APPLICATIONS • Variable speed AC motor drive inverters (VSDAC) • Uninterruptable Power Supplies • • • • • High Voltage Converters Choppers Welding Induction Heating DC/DC Converters Outline type code: H (See Package Details for further information) Fig. 1 Package outline VOLTAGE RATINGS Type Number Repetitive Peak Off-state Voltage VDRM (V) Repetitive Peak Reverse Voltage VRRM (V) DG646BH25 2500 16 Conditions Tvj = 125°C, I DM =50mA, IRRM = 50mA CURRENT RATINGS Symbol Parameter ITCM Repetitive peak controllable on-state current IT(AV) Mean on-state current IT(RMS) RMS on-state current Conditions VD = VDRM, Tj = 125°C, dIGQ/dt = 40A/µs, CS = 6.0 µF THS = 80°C, Double side cooled. Half sine 50Hz THS = 80°C, Double side cooled. Half sine 50Hz Max. Units 2500 A 867 A 1360 A 1/14 www.dynexsemi.com DG646BH25 SEMICONDUCTOR SURGE RATINGS Symbol ITSM 2 It Parameter Test Conditions Max. Units Surge (non repetitive) on-state current 10ms half sine. Tj = 125°C 18.0 kA 10ms half sine. Tj = 125°C 16.2 MA s VD = 1500V, IT = 2000A, Tj = 125°C, I FG > 30A, Rise time > 1.0 µs 300 A/µs To 66% VDRM; RGK ≤ 1.5Ω, Tj = 125°C 135 V/µs To 66% VDRM; VRG ≤ -2V, Tj = 125°C 1000 V/µs IT = 2000A, VDM = 2500V, Tj = 125°C, di GQ/dt = 40A/µs, CS = 2.0µF 200 nH 2 I t for fusing diT/dt Critical rate of rise of on-state current dVD/dt Rate of rise of off-state voltage LS Peak stray inductance in snubber circuit 2 GATE RATINGS Symbol Parameter Test Conditions Min. Max. Units This value may be exceeded during turn-off - 16 V 20 100 A Average forward gate power - 15 W Peak reverse gate power - 19 kW VRGM Peak reverse gate voltage IFGM Peak forward gate current PFG(AV) PRGM diGQ/dt Rate of rise of reverse gate current 30 60 A/µs tON(min) Minimum permissible on time 50 - µs tOFF(min) Minimum permissible off time 100 - µs THERMAL AND MECHANICAL RATINGS Symbol Rth(j-hs) Parameter Thermal resistance – junction to heatsink surface Test Conditions Double side cooled Min. Max. Units DC - 0.018 °C/W Anode DC - 0.03 °C/W Cathode DC - 0.045 °C/W Per contact - 0.006 °C/W - 125 °C Single side cooled Rth(c-hs) Contact thermal resistance Clamping force 20.0kN With mounting compound Tvj Virtual junction temperature On-state (conducting) TOP/Tstg Operating junction/storage temperature range -40 125 °C Clamping force 18.0 22.0 kN Fm 2/14 www.dynexsemi.com DG646BH25 SEMICONDUCTOR CHARACTERISTICS Tj = 125°C unless stated otherwise Symbol Parameter Test Conditions Min . Max. Units VTM On-state voltage At 2000A peak, IG(ON) = 7A dc - 2.6 V IDM Peak off-state current VDRM = 2500V, VRG = 0V - 100 mA IRRM Peak reverse current At VRRM - 50 mA VGT Gate trigger voltage VD = 24V, IT = 100A, Tj = 25°C - 1.0 V IGT Gate trigger current VD = 24V, IT = 100A, Tj = 25°C - 3.0 A IRGM Reverse gate cathode current VRGM = 16V, No gate/cathode resistor - 50 mA EON Turn-on energy - 1188 mJ - 1.2 µs VD = 1500V IT = 2000A, dIT/dt = 300A/µs IFG = 30A, rise time < 1.0µs td Delay time tr Rise time - 3.0 µs Turn-off energy - 4000 mJ - 17.0 µs - 2.0 µs - 19.0 µs - 6600 µC EOFF tgs Storage time IT = 2000A, tgf Fall time VDM = 2500V, tgq Gate controlled turn-off time Snubber capacitor CS = 2.0µF, QGQ Turn-off gate charge diGQ/dt = 40A/µs QGQT Total turn-off gate charge - 13200 µC IGQM Peak reverse gate current - 650 A 3/14 www.dynexsemi.com DG646BH25 SEMICONDUCTOR Fig.2 Maximum gate trigger voltage/current vs junction temperature Fig.3 On-state characteristics Maximum permissible turn-off current ITCM - (A) 3000 2500 2000 1500 Conditions: 125oC VDM = VDRM dIGQ/dt = 40A/us 1000 500 0 0 1 2 3 4 5 6 Snubber Capacitance Cs - (uF) Fig.4 Maximum dependence of ITCM on CS Fig.5 Steady state sinusoidal wave conduction loss – double side cooled 4/14 www.dynexsemi.com DG646BH25 SEMICONDUCTOR Fig.6 Surge (non-repetitive) on-state current vs time Fig.7 Steady state rectangular wave conduction loss – double side cooled Fig.8 Maximum (limit) transient thermal impedance – junction to case (°C/kW) 5/14 www.dynexsemi.com DG646BH25 SEMICONDUCTOR Fig.9 Turn-on energy vs on-state current Fig.10 Turn-on energy vs peak forward gate current Fig.11 Turn-on energy vs on-state current Fig.12 Turn-on energy vs peak forward gate current 6/14 www.dynexsemi.com DG646BH25 SEMICONDUCTOR Fig.13 Turn-on energy vs rate of rise of on-state current Fig.14 Delay time & rise time vs turn-on current Fig.15 Delay time & rise time vs peak forward gate current Fig.16 Turn-off energy vs on-state current 7/14 www.dynexsemi.com DG646BH25 SEMICONDUCTOR Fig.17 Turn-off energy vs rate of rise of reverse gate current Fig.18 Turn-off energy vs on-state current Fig.19 Turn-off energy vs rate of rise of reverse gate current Fig.20 Turn-off energy vs on-state current 8/14 www.dynexsemi.com DG646BH25 SEMICONDUCTOR Fig.21 Gate storage time vs on-state current Fig.22 Gate storage time vs rate of rise of reverse gate current Fig.23 Gate fall time vs on-state current Fig.24 Gate fall time vs rate of rise of reverse gate current 9/14 www.dynexsemi.com DG646BH25 SEMICONDUCTOR Fig.25 Peak reverse gate current vs turn-off current Fig.26 Peak reverse gate current vs rate of rise of reverse gate current Fig.27 Turn-off gate charge vs on-state current Fig.28 Turn-off gate charge vs rate of rise of reverse gate current 10/14 www.dynexsemi.com DG646BH25 SEMICONDUCTOR Fig.29 Rate of rise of off-state voltage vs gate cathode resistance 11/14 www.dynexsemi.com DG646BH25 SEMICONDUCTOR Fig.30 General switching waveforms 12/14 www.dynexsemi.com DG646BH25 SEMICONDUCTOR PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Nominal weight: 820g Clamping force: 20kN ±10% Lead length: 505mm Package outline type code: H Fig.31 Package outline 13/14 www.dynexsemi.com DG646BH25 SEMICONDUCTOR POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln Lincolnshire, LN6 3LF. United Kingdom. Tel: +44(0)1522 500500 Fax: +44(0)1522 500550 CUSTOMER SERVICE Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020 Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user’s responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company’s conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 14/14 www.dynexsemi.com