DG758BX45 DG758BX45 Gate Turn-off Thyristor Replaces March 1998 version, DS4095-5.3 DS4095-6.0 January 2000 APPLICATIONS KEY PARAMETERS 3000A ITCM VDRM 4500V IT(AV) 870A dVD/dt 1000V/µs diT/dt 300A/µs ■ Variable speed A.C. motor drive inverters (VSD-AC). ■ Uninterruptable Power Supplies ■ High Voltage Converters. ■ Choppers. ■ Welding. ■ Induction Heating. ■ DC/DC Converters. FEATURES ■ Double Side Cooling. ■ High Reliability In Service. ■ High Voltage Capability. ■ Fault Protection Without Fuses. ■ High Surge Current Capability. ■ Turn-off Capability Allows Reduction In Equipment Size And Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requirements. Outline type code: X. See Package Details for further information. VOLTAGE RATINGS Type Number DG758BX45 Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage VDRM VRRM V V 4500 16 Conditions Tvj = 125oC, IDM = 100mA, IRRM = 50mA CURRENT RATINGS Symbol Parameter Conditions Max. Units 3000 A ITCM Repetitive peak controllable on-state current VD = 66% VDRM, Tj = 125oC, diGQ/dt = 40A/µs, Cs = 6µF IT(AV) Mean on-state current THS = 80oC. Double side cooled. Half sine 50Hz. 870 A IT(RMS) RMS on-state current THS = 80oC. Double side cooled. Half sine 50Hz. 1365 A 1/19 DG758BX45 SURGE RATINGS Symbol ITSM I2t diT/dt dVD/dt LS Conditions Parameter Max. Units Surge (non-repetitive) on-state current 10ms half sine. Tj = 125oC 16.0 kA I2t for fusing 10ms half sine. Tj =125oC 1.28 x 106 A2s Critical rate of rise of on-state current VD = 3000V, IT = 3000A, Tj = 125oC, IFG > 40A, Rise time > 1.0µs 300 A/µs To 66% VDRM; RGK ≤ 1.5Ω, Tj = 125oC 100 V/µs To 66% VDRM; VRG = -2V, Tj = 125oC 1000 V/µs 200 nH Rate of rise of off-state voltage Peak stray inductance in snubber circuit - GATE RATINGS Symbol Parameter Conditions Min. Max. Units - 16 V VRGM Peak reverse gate voltage IFGM Peak forward gate current - 100 A Average forward gate power - 20 W Peak reverse gate power - 24 kW PFG(AV) PRGM This value maybe exceeded during turn-off diGQ/dt Rate of rise of reverse gate current 30 60 A/µs tON(min) Minimum permissable on time 50 - µs tOFF(min) Minimum permissable off time 100 - µs Min. Max. Units Double side cooled - 0.0146 o Anode side cooled - 0.0233 o Cathode side cooled - 0.0392 o - 0.0036 o THERMAL RATINGS AND MECHANICAL DATA Symbol Rth(j-hs) Parameter DC thermal resistance - junction to heatsink surface Conditions Clamping force 35.0kN With mounting compound per contact C/W C/W C/W Rth(c-hs) Contact thermal resistance Tvj Virtual junction temperature -40 125 o Operating junction/storage temperature range -40 125 o Clamping force 33.0 37.0 kN TOP/Tstg - 2/19 C/W C C DG758BX45 CHARACTERISTICS Tj = 125oC unless stated otherwise Symbol Conditions Parameter Min. Max. Units VTM On-state voltage At 3000A peak, IG(ON) = 8A d.c. - 4.0 V IDM Peak off-state current VDRM = 4500V, VRG = 0V - 100 mA IRRM Peak reverse current At VRRM - 50 mA VGT Gate trigger voltage VD = 24V, IT = 100A, Tj = 25oC - 1.2 V IGT Gate trigger current VD = 24V, IT = 100A, Tj = 25oC - 3.5 A IRGM Reverse gate cathode current VRGM = 16V, No gate/cathode resistor - 50 mA EON Turn-on energy VD = 2250V - 3000 mJ td Delay time IT = 3000A, dIT/dt = 300A/µs - 1.5 µs tr Rise time IFG = 40A, rise time < 1.0µs - 3.0 µs Turn-off energy - 6300 mJ tgs Storage time - 20.6 µs tgf Fall time IT = 3000A, VDM = 3000V - 2.2 µs tgq Gate controlled turn-off time Snubber Cap Cs = 6.0µF, - 22.8 µs QGQ Turn-off gate charge diGQ/dt = 40A/µs - 10000 µC QGQT Total turn-off gate charge - 20000 µC IGQM Peak reverse gate current - 830 A EOFF 3/19 DG758BX45 2.0 8.0 1.5 6.0 4.0 1.0 VGT IGT 0.5 0 -50 Gate trigger current IGT - (A) Gate trigger voltage VGT - (V) CURVES -25 75 0 25 50 100 Junction temperature Tj - (˚C) 2.0 0 125 Fig.1 Maximum gate trigger voltage/current vs junction temperature Instantaneous on-state current - (A) 5000 Measured under pulse conditions IG(ON) = 8A 4000 Tj = 25˚C 3000 Tj = 125˚C 2000 1000 0 1.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Instantaneous on-state voltage - (V) FIG 2 MAXIMUM ON characteristics STATE CHARACTERISTICS Fig.2LIMIT On-state 4/19 1.5 DG758BX45 Maximum permissible turn-off current ITCM - (A) 3000 2500 2000 1500 1000 Conditions: Tj = 125˚C, VDM = 2000V dIGQ/dt = 40A/µs 500 0 0 1.0 2.0 3.0 4.0 5.0 6.0 Snubber capacitance Cs - (µF) Fig.3 Maximum dependence of ITCM on CS 0.015 dc 0.010 0.005 0 0.001 0.01 0.1 Time - s 10 1.0 Fig.4 Maximum (limit) transient thermal impedance - double side cooled Peak half sine wave on-state current - (kA) Thermal impedance - ˚C/W 0.020 40 30 20 10 0 0.0001 0.001 0.01 0.1 Pulse duration - (ms) 1.0 Fig.5 Surge (non-repetitive) on-state current vs time 5/19 DG758BX45 Mean on-state power dissipation - (W) 4000 dc Conditions; IG(ON) = 8A 3500 180˚ 3000 120˚ 2500 60˚ 2000 30˚ 1500 1000 500 0 0 200 400 600 800 1000 1200 1400 Mean on-state current - (A) 65 70 80 90 100 110 120 Maximum permissible case temperature - (˚C) Mean on-state power dissipation- (W) Fig.6 Steady state rectangluar wave conduction loss - double side cooled 3000 Conditions; IG(ON) = 8A 2500 120˚ 180˚ 90˚ 60˚ 2000 30˚ 1500 1000 500 0 0 100 200 300 400 500 600 Mean on-state current - (A) 700 800 900 80 100 120 Maximum permissible case temperature - (˚C) Fig.7 Steady state sinusoidal wave conduction loss - double side cooled 6/19 140 130 DG758BX45 Conditions: T = 25˚C 2000 j IFGM = 40A Cs = 6µF 1750 Rs = 4.4 Ohms dI/dt = 300A/µs VD = 2250V 1500 VD = 1500V 1250 VD = 750V 1000 750 500 250 0 0 500 1000 1500 2000 On-state current - (A) 2500 3000 Fig.8 Turn-on energy vs on-state current 2500 2250 Turn-on energy loss EON - (mJ) Turn-on energy loss EON - (mJ) 2250 2000 VD = 2250V 1750 1500 VD = 1500V 1250 1000 VD = 750V 750 Conditions: IT = 3000A, Tj = 25˚C Cs = 6µF, Rs = 4.4 Ohms, dIT/dt = 300A/µs 500 0 10 20 30 40 50 60 70 Peak forward gate current IFGM- (A) 80 Fig.9 Turn-on energy vs peak forward gate current 7/19 DG758BX45 Turn-on energy loss EON - (mJ) 3000 Conditions: Tj = 125˚C, IFGM = 40A 2500 Cs = 6µF, Rs = 4.4Ω dIT/dt = 300A/µs 2000 dIFG/dt = 40A/µs VD = 2250V VD = 1500V 1500 1000 VD = 750V 500 0 0 500 1000 1500 2000 On-state current - (A) 2500 3000 Fig.10 Turn-on energy vs on-state current 3000 3500 Conditions: IT = 3000A Tj = 125˚C Cs = 6µF 2500 Rs = 4.4 Ohms IFGM = 40A 3250 2750 2500 VD = 2250V 2250 2000 1750 VD = 1500V 1500 1250 VD = 1500V 2000 1500 VD = 750V 1000 VD = 750V 1000 Conditions: IT = 3000A, Tj = 125˚C Cs = 6µF, Rs = 4.4Ω, 750 dIT/dt = 300A/µs, dIFG/dt = 40A/µs 500 0 10 20 30 40 50 60 70 Peak forward gate current IFGM- (A) Fig.11 Turn-on energy vs peak forward gate current 8/19 Turn-on energy loss EON - (mJ) Turn-on energy loss EON - (mJ) 3000 VD = 2250V 500 0 80 0 50 100 150 200 250 300 Rate of rise of on-state current dIT/dt - (A/µs) Fig.12 Turn-on energy vs rate of rise of on-state current 3.0 tr 2.5 2.0 td 1.5 Conditions: Tj = 125˚C, IFGM = 40A Cs = 6µF, Rs = 4.4Ω, dIT/dt = 300A/µs, VD = 2250V, dIFG/dt = 40A/µs 1.0 0.5 0 0 500 1000 1500 2000 On-state current - (A) 2500 3000 Fig.13 Delay time & rise time vs turn-on current 5.0 Turn-on delay time and rise time - (µs) Turn-on delay time and rise time - (µs) DG758BX45 Conditions: IT = 3000A Tj = 125˚C Cs = 6µF Rs = 4.4Ω dIT/dt = 300A/µs VD = 2250V dIFG/dt = 40A/µs 4.5 4.0 3.5 3.0 2.5 tr 2.0 1.5 td 1.0 0.5 0 0 10 20 30 40 50 60 70 Peak forward gate current IFGM - (A) 80 Fig.14 Delay time & rise time vs peak forward gate current 9/19 DG758BX45 Turn-off energy loss EOFF - (J) 4.0 Conditions: Tj = 25˚C 3.5 Cs = 6µF dIGQ/dt = 40A/µs 3.0 VDM = 3000V VDM = 2000V 2.5 VDM = 1000V 2.0 1.5 1.0 0.5 0 0 500 1000 1500 2000 On-state current - (A) 2500 3000 Fig.15 Turn-off energy vs on-state current 4.0 Turn-off energy per pulse EOFF - (J) Conditions: IT = 3000A 3.8 Tj = 25˚C Cs = 6µF 3.6 3.4 VDM = 3000V VDM = 2000V 3.2 3.0 2.8 2.6 VDM = 1000V 2.4 2.2 2.0 20 25 30 35 40 45 50 55 60 Rate of rise of reverse gate current dIGQ/dt - (A/µs) Fig.16 Turn-off energy vs rate of rise of reverse gate current 10/19 DG758BX45 Conditions: Tj = 125˚C 6.0 Cs = 6µF dIGQ/dt = 40A/µs 5.0 VDM = 3000V VDM = 2000V 4.0 VDM = 1000V 3.0 2.0 1.0 0 0 500 1000 1500 2000 On-state current - (A) 2500 3000 Fig.17 Turn-off energy vs on-state current 7.0 Turn-off energy per pulse EOFF - (J) Turn-off energy loss EOFF - (J) 7.0 Conditions: IT = 3000A Tj = 125˚C Cs = 6µF VDM = 3000V 6.0 VDM = 2000V 5.0 4.0 VDM = 1000V 3.0 20 25 30 35 40 45 50 55 60 Rate of rise of reverse gate current dIGQ/dt- (A/µs) Fig.18 Turn-off energy loss vs rate of rise of reverse gate current 11/19 DG758BX45 Turn-off energy per pulse EOFF - (J) 6.0 Cs = 4.0µF Conditions: T = 125˚C 5.0 Vj = 2000V DM dIGQ/dt = 40A/µs 4.0 Cs = 6.0µF Cs = 2.0µF Cs = 1.0µF 3.0 2.0 1.0 0 0 500 2500 1000 1500 2000 On-state current - (A) 3000 Fig.19 Turn-off energy vs on-state current 25 Conditions: Cs = 6µF dIGQ/dt = 40A/µs Gate storage time tgs - (µs) 20 Tj = 125˚C 15 Tj = 25˚C 10 5 0 0 500 1000 1500 2000 On-state current - (A) Fig.20 Gate storage time vs on-state current 12/19 2500 3000 DG758BX45 30 Tj = 125˚C Conditions: IT = 3000A Cs = 6µF 25 Gate storage time tgs - (µs) Tj = 25˚C 20 15 10 5 20 25 30 35 40 45 50 55 60 Rate of rise of reverse gate current dIGQ/dt - (A/µs) Fig.21 Gate storage time vs rate of rise of reverse gate current 2.5 Conditions: Cs = 6µF dIGQ/dt = 40A/µs Tj = 125˚C Gate fall time tgf - (µs) 2.0 Tj = 25˚C 1.5 1.0 0.5 0 500 1000 1500 2000 On-state current - (A) 2500 3000 Fig.22 Gate fall time vs on-state current 13/19 DG758BX45 2.5 Tj = 125˚C Tj = 25˚C Gate fall time tgf - (µs) 2.0 1.5 1.00 Conditions: IT = 3000A Cs = 6µF 0.5 20 25 30 35 40 45 50 55 60 Rate of rise of reverse gate current dIGQ/dt - (A/µs) Fig.23 Gate fall time vs rate of rise of reverse gate current Peak reverse gate current IGQM - (A) 900 Conditions: Cs = 6µF 800 dIGQ/dt = 40A/µs Tj = 125˚C 700 Tj = 25˚C 600 500 400 300 200 100 0 500 1000 1500 2000 On-state current - (A) 2500 Fig.24 Peak reverse gate current vs turn-off current 14/19 3000 DG758BX45 1000 Peak reverse gate current IGQM - (A) Conditions: IT = 3000A Cs = 6µF 900 800 700 Tj = 125˚C Tj = 25˚C 600 500 20 25 30 35 40 45 50 55 60 Rate of rise of reverse gate current dIGQ/dt - (A/µs) Fig.25 Peak reverse gate current vs rate of rise of reversegate current Total turn-off charge QGQ - (mC) 10.0 Conditions: Cs = 6µF dIGQ/dt = 40A/µs Tj = 125˚C 7.5 Tj = 25˚C 5.0 2.5 0 0 500 1000 1500 2000 On-state current - (A) 2500 3000 Fig.26 Turn-off gate charge vs on-state current 15/19 DG758BX45 Turn-off gate charge QGQ - (mC) 15.0 Conditions: IT = 3000A Cs = 6µF 12.5 Tj = 125˚C 10.0 Tj = 25˚C 7.5 5.0 20 25 30 35 40 45 50 55 60 Rate of rise of reverse gate current dIGQ/dt - (A/µs) Rate of rise of off-state voltage dV/dt - (V/µs) Fig.27 Turn-off gate charge vs rate of rise of reverse gate current 1000 Tj = 125˚C 500 0 0.1 VD = 2250V VD = 3000V 1.0 10 100 Gate cathode resistance RGK - (Ohms) 1000 Fig.28 Rate of rise of off-state voltage vs gate cathode resistance 16/19 Anode voltage and current DG758BX45 0.9VD 0.9IT dVD/dt VD VD IT 0.1VD td VDM ITAIL VDP tgs tr tgf tgt Gate voltage and current dIFG/dt 0.1IFG tgq IFG VFG IG(ON) 0.1IGQ tw1 VRG QGQ 0.5IGQM IGQM V(RG)BR Recommended gate condition: ITCM = 3000A IFG = 40A IG(ON) = 8A d.c. tw1(min) = 10µs IGQM = 830A diGQ/dt = 40A/µs QGQ = 10000µC VRG(min) = 2V VRG(max) = 16V These are recommended Mitel Semiconductor conditions. Other conditions are permitted according to users gate drive specifications. Fig.29 General switching waveforms 17/19 DG758BX45 PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes Ø3.60 ± 0.05 x 2.0 ± 0.1 deep (one in each electrode). 15˚ 63 max Anode 26.0 ±0.5 Ø112 max Ø66 9.6 Ø70 63 max Nominal weight: 1200g Clamping force: 35kN ±10% Lead length: 505mm Package outine type code: X 18/19 Cathode POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550 CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 SALES OFFICES Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19. France: Tel: +33 (0)2 47 55 75 52. Fax: +33 (0)2 47 55 75 59. Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 North America: Tel: (440) 259-2060. Fax: (440) 259-2059. Tel: (949) 733-3005. Fax: (949) 733-2986. These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. 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