DGT305SE DGT305SE Gate Turn-off Thyristor Replaces February 2002 version, issue DS5519-2.0 DS5519-3.0 July 2004 FEATURES KEY PARAMETERS ■ Double Side Cooling ITCM 700A ■ High Reliability In Service High Voltage Capability VDRM 1800V ■ Fault Protection Without Fuses IT(AV) 240A ■ ■ High Surge Current Capability dVD/dt 500V/µs ■ Turn-off Capability Allows Reduction In Equipment Size And Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requirements diT/dt 500A/µs APPLICATIONS ■ Variable speed A.C. motor drive inverters (VSD-AC) ■ Uninterruptable Power Supplies ■ High Voltage Converters ■ Choppers ■ Welding ■ Induction Heating ■ DC/DC Converters Outline type code: E (See Package Details for further information) Fig. 1 Package outline VOLTAGE RATINGS Type Number DGT305SE18 Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage VDRM VRRM V V 1800 16 Conditions Tvj = 125oC, IDM = 50mA, IRRM = 50mA, VRG = 2V CURRENT RATINGS Symbol Parameter Conditions Max. Units 700 A ITCM Repetitive peak controllable on-state current VD = 67%VDRM, Tj = 125oC, diGQ/dt =15A/µs, Cs = 1.5µF IT(AV) Mean on-state current THS = 80oC. Double side cooled. Half sine 50Hz. 240 A IT(RMS) RMS on-state current THS = 80oC. Double side cooled. Half sine 50Hz. 373 A 1/14 www.dynexsemi.com DGT305SE SURGE RATINGS Symbol ITSM I2t diT/dt dVD/dt VDP Conditions Parameter Max. Units Surge (non-repetitive) on-state current 10ms half sine. Tj = 125oC 4.0 kA I2t for fusing 10ms half sine. Tj =125oC 80000 A2s Critical rate of rise of on-state current VD = 67% VDRM, IT = 700A, Tj = 125oC, IFG > 20A, Rise time < 1.0µs 500 A/µs Rate of rise of off-state voltage To 80% VDRM; RGK ≤ 1.5Ω, Tj = 125oC 500 V/µs 400 V Peak forward transient voltage during current VD = 67% VDRM, IT = 700A, Tj = 125oC, fall time diGQ/dt =15A/µs, Cs = 1.5µF GATE RATINGS Symbol Parameter Conditions Min. Max. Units - 16 V VRGM Peak reverse gate voltage IFGM Peak forward gate current - 50 A Average forward gate power - 10 W Peak reverse gate power - 6 kW PFG(AV) PRGM This value maybe exceeded during turn-off diGQ/dt Rate of rise of reverse gate current 10 50 A/µs tON(min) Minimum permissable on time 20 - µs tOFF(min) Minimum permissable off time 40 - µs Min. Max. Units Double side cooled - 0.075 o Anode side cooled - 0.12 o Cathode side cooled - 0.20 o - 0.018 o - 125 o Operating junction/storage temperature range –40 125 o Clamping force 5.0 6.0 kN THERMAL RATINGS Symbol Rth(j-hs) Parameter DC thermal resistance - junction to heatsink surface Rth(c-hs) Contact thermal resistance Tvj Virtual junction temperature TOP/Tstg - Conditions Clamping force 5.5kN With mounting compound per contact C/W C/W C/W C/W C C 2/14 www.dynexsemi.com DGT305SE CHARACTERISTICS Tj = 125oC unless stated otherwise Symbol Conditions Parameter Min. Max. Units VTM On-state voltage At 600A peak, IG(ON) = 2A d.c. - 2.5 V IDM Peak off-state current At = VDRM, VRG = 2V - 50 mA IRRM Peak reverse current At VRRM - 50 mA VGT Gate trigger voltage VD = 24V, IT = 100A, Tj = 25oC - 0.75 V IGT Gate trigger current VD = 24V, IT = 100A, Tj = 25oC - 1.2 A IRGM Reverse gate cathode current VRGM = 16V, No gate/cathode resistor - 50 mA EON Turn-on energy VD = 1200V, IT = 600A, - 160 mJ td Delay time IFG = 20A, rise time < 1.0µs - 1.1 µs tr Rise time RL = (Residual inductance 2.75µH) - 2.5 µs - 550 mJ - 30 µs - 12 µs - 1.5 µs - 13.5 µs EOFF ttail tgs Turn-off energy Tail time Storage time IT =600A, VD = 1200V, Snubber Cap Cs = 1.5µF, tgf Fall time diGQ/dt = 15A/µs tgq Gate controlled turn-off time RL = (Residual inductance 2.75µH) QGQ Turn-off gate charge - 900 µC QGQT Total turn-off gate charge - 1800 µC 3/14 www.dynexsemi.com DGT305SE CURVES Fig.2 Gate characteristics Fig.3 Maximum (limit) on-state characteristics Fig.4 Dependence of ITCM on CS Fig.5 Maximum (limit) transient thermal resistance 4/14 www.dynexsemi.com DGT305SE Fig.6 Surge (non-repetitive) on-state current vs time Fig.7 Steady state rectangulerwave conduction loss - double side cooled 5/14 www.dynexsemi.com DGT305SE Fig.8 Steady state sinusoidal wave conduction loss - double side cooled Fig.9 Turn-on energy vs on-state current Fig.10 Turn-on energy vs peak forward gate current 6/14 www.dynexsemi.com DGT305SE Fig.11 Turn-on energy vs on-state current Fig.13 Turn-on energy vs rate of rise of on-state current Fig.12 Turn-on energy vs peak forward gate current Fig.14 Delay time and rise time vs on-state current 7/14 www.dynexsemi.com DGT305SE Fig.15 Delay time and rise time vs peak forward gate current Fig.16 Turn-off energy vs on-state current Fig.17 Turn-off energy vs rate of rise of reverse gate current Fig.18 Turn-off energy vs on-state current 8/14 www.dynexsemi.com DGT305SE Fig.19 Turn-off energy vs rate of rise of reverse gate current Fig.20 Turn-off energy vs on-state current with CS as parameter Fig.21 Storage time vs on-state current Fig.22 Storage time vs rate of rise of reverse gate current 9/14 www.dynexsemi.com DGT305SE Fig.23 Fall time vs on-state current Fig.24 Fall time vs rate of rise of reverse gate current Fig.25 Peak reverse gate current vs on-state current Fig.26 Peak reverse gate current vs rate of rise of reverse gate current 10/14 www.dynexsemi.com DGT305SE Fig.27 Turn-off gate charge vs on-state current Fig.28 Turn-off gate charge vs rat of rise of reverse gate current Fig.29 Dependence of critical dVD/dt on gate-cathode resistance and gate-cathode reverse voltage 11/14 www.dynexsemi.com Anode voltage and current DGT305SE 0.9VD 0.9IT dVD/dt VD VD IT 0.1VD td VDM ITAIL VDP tgs tr tgf tgt Gate voltage and current dIFG/dt 0.1IFG tgq IFG VFG IG(ON) 0.1IGQ tw1 VRG QGQ 0.5IGQM IGQM V(RG)BR Recommended gate conditions: ITCM = 600A IFG = 20A IG(ON) = 2A d.c. tw1(min) = 4.5µs IGQM = 130A diGQ/dt = 15A/µs QGQ = 900µC VRG(min) = 2V VRG(max) = 16V These are recommended Dynex Semiconductor conditions. Other conditions are permitted according to users gate drive specifications. Fig.30 General switching waveforms 12/14 www.dynexsemi.com DGT305SE PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 30˚ 1 5˚ 2 holes Ø3.6 ± 0.1 x 2.0 ± 0.1 deep (One in each electrode) Cathode tab Cathode Ø42max Ø25nom. Gate 15 14 Ø25nom. Anode Nominal weight: 82g Clamping force: 6kN ±10% Package outline type code: E 13/14 www.dynexsemi.com POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550 CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 © Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. www.dynexsemi.com