Data Sheet FCR03S Series Description 0.3 Amp Silicon Controlled Rectifiers Mechanical Dimensions Anode .110 .060 .037 Gate .016 2 .115 .037 Cathode 3 1 .043 .016 .004 Features n DIRECTLY DRIVEN WITH IC AND MOS DEVICE n AVAILABLE IN VOLTAGE RATINGS FROM 200 TO 600 VOLTS n VOID-FREE GLASS PASSIVATED CHIPS n SENSITIVE GATE TRIGGER CURRENT Maximum Ratings and Electrical Characteristics Symbol VDRM VRRM Value RMS On-State Current @ TC = 50oC and Conduction Angle of 180o IT(AV) 0.3 Amps Peak-Surge On-State Current One cycle @ 50Hz or 60Hz VTSM 6 Amps Peak Gate-Trigger Current for 3µs max. IGTM 0.1 Amps Peak Gate-Power Dissipation @ IGT < IGTM P GM 0.1 Watts Average Gate-Power Dissipation PG(AV) 0.05 Watts Peak Off-State Current (1) TC = 25oC @ Rated Reverse Voltage TC = 125oC IDRM IRRM 10 200 µAmps Maximum On-State Voltage @ TC = 25oC and IT = 0.3A VTM 1.7 Volts DC Holding Current (1), Gate Open, TC = 25oC IHO 5 mAmps Critical dV/dt 5 Volts/µsec DC Gate -Trigger Current for Anode (2) IGT 200 µAmps DC Gate -Trigger Voltage for Anode (2) VGT 0.8 Volts Gate-Controlled Turn-On Time, tD + tR IGT = 10mA, TC = 25oC T gt 2.2 µsec Typical Thermal Resistance Junction to Case RθJC 75 Storage Temperature Range TSTG -40 to 150 o Operating Temperature Range TOPER -40 to 110 o Repetitive Peak Off-State Voltage and Repetitive Peak Reverse Voltage @ TC = 125oC FCR0320S FCR0340S FCR0360S Critical Rate-Of-Rise of Off-State Voltage (1) Gate Open, TC = 110oC Notes: (1) RG-K = 1kΩ. (2) Voltage = 7Vdc, RL = 100Ω, TC = 25oC. Units Volts 200 400 600 C/Watt o C C 0.3 Amp Silicon Controlled Rectifiers Data Sheet Gate Trigger Current vs RGK 101 101 100 100 10 10−2 10−1 RGK (KΩ) 100 101 On-State Voltage vs VTM 10 1 0.1 0.01 0.001 0.0 0.5 1 2.5 1.5 2.0 On-State Voltage VTM (V) Gate Trigger Voltage vs T A 600 500 400 300 0 40 80 120 160 °° Ambient Temperature T A (°°C) 10−1 RGK (KΩ) 100 101 Gate Trigger Current vs TA VAK=7v R=100Ω 0.1 40 80 120 160 °° Ambient Temperature T A (°°C) Holding Current vs TA 8 Holding Current IH (mA)) 700 10−2 1 0.01 0 3.0 Gate Trigge Voltage V GT (mV) 800 10−1 10−3 Gate Trigger Current IGT / IGT(1KΩ) Ω) Ω) 10−1 10−3 On-State Current VTM (V) Gate Trigger Current IGT / IGT(1KΩ) Ω) Ω) Holding Current IH / IH(1KΩ) Ω) Ω) Holding Current vs RGK 102 6 4 2 0 0 40 120 80 °° Ambient Temperature T A (°°C) 160