DCR100-3 THRU DCR100-8 DC COMPONENTS CO., LTD. DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS VOLTAGE RANGE - 100 to 600 Volts CURRENT - 0.8 Ampere Description * Driven directly with IC and MOS device * Feature proprietary, void-free glass passivated chips * Available in voltage ratings from 100 to 600 volts * Sensitive gate trigger current * Designed for high volume, line-powered control application in relay lamp drivers, small motor controls, gate drivers for large thyristors TO-92 .190(4.83) .170(4.33) Pinning o 1 = Cathode, 2 = Gate, 3 = Anode Absolute Maximum Ratings(TA=25oC) Characteristic Peak Repetitive Off-State Voltage and Reverse Voltage DCR100-3 DCR100-4 DCR100-6 DCR100-8 Symbol Rating Unit VDRM, VRRM 100 200 400 600 V 0.8 A Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60Hz) ITSM 8 A Forward Peak Gate Current IGM 0.8 A .022(0.56) .014(0.36) PGM 0.1 W PG(AV) 0.01 W Reverse Peak Gate Voltage VGRM 5.0 TJ -40 to +110 TSTG -40 to +150 .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) 3 2 1 Forward Average Gate Power Dissipation Storage Temperature .500 Min (12.70) .050 Typ (1.27) IT(RMS) Operating Junction Temperature o 2 Typ On-State RMS Current (TA=57oC, 180o Conduction Angles) Forward Peak Gate Power Dissipation 2 Typ .190(4.83) .170(4.33) .050 Typ o o 5 Typ 5 Typ (1.27) V o C Dimensions in inches and (millimeters) o C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Characteristic Peak Repetitive Forward or Reverse Off-State Blocking Current Symbol TJ=25oC TJ=110oC IDRM, IRRM Min Typ Max - - 10 - - 100 Unit µA Test Conditions VAK=Rated VDRM or VRRM RGK=1KΩ Peak Forward On-State Voltage VTM - - 1.7 V ITM=0.8A Peak Continuous DC Gate Trigger Current IGT - - 200 µA VAK=7V DC, RL=100Ω Continuous DC Gate Trigger Voltage VGT - - 0.8 V IH - - 5.0 mA DC Holding Current Critical Rate-of-Rise of Off-State Voltage Gate Controlled Turn-on Time(tD+tR) Thermal Resistance, Junction to Case VAK=7V DC, RL=100Ω RGK=1KΩ dv/dt - 5.0 - V/µS RGK=1KΩ Tgt - 2.2 - µsec IGT=10mA RθJC - 75 - o - C/W