IS31AP2010E MONO FILTER-LESS CLASS-D AUDIO POWER AMPLIFIER Advanced Information May 2012 GENERAL DESCRIPTION FEATURES The IS31AP2010E is a high efficiency, mono filter-less class-D audio power amplifier. A low noise, filter-less PWM architecture eliminates the output filter, reduces external component count, system cost, and simplifying design. In cellular handsets, the earpiece, speaker phone, and melody ringer speaker can each be driven by the IS31AP2010E. The gain of IS31AP2010E is externally configurable which allows independent gain control from multiple sources by summing signals from each function. IS31AP2010E is available in UTQFN-9 packages. It operates from 2.7V to 5.5V over the temperature range of -40°C to +85°C. Supply voltage from 2.7V ~ 5.5V High efficiency Less than 1μA shutdown current Optimized PWM output stage eliminates LC output filter Fully differential design reduces RF rectification and eliminates bypass capacitor Improved CMRR eliminates two input coupling capacitors Integrated click-and-pop suppression circuitry UTQFN-9 package RoHS compliant and 100% lead(Pb)-free APPLICATIONS Wireless or cellular handsets and PDAs Portable DVD player Notebook PC Portable radio Educational toys Portable gaming TYPICAL APPLICATION CIRCUIT VBattery B1,B2 CS 1 F CIN0.1 F 0.1 F RIN150k Differential Input OUT+ C1 A1 CIN+ 0.1 F VCC IN- OUT- C3 A3 IS31AP2010E IN+ RIN+ 150k C2 Shutdown Control SDB GND A2,B3 100k Figure 1 Typical Application Circuit (Differential Input) Integrated Silicon Solution, Inc. – www.issi.com Rev. 00A, 05/02/2012 1 IS31AP2010E Figure 2 Typical Application Circuit (Single-ended Input) Integrated Silicon Solution, Inc. – www.issi.com Rev. 00A, 05/02/2012 2 IS31AP2010E PIN CONFIGURATION Package Pin Configuration (Top View) UTQFN-9 PIN DESCRIPTION No. Pin Description A1 IN+ Positive audio input. A2, B3 GND Connect to ground. A3 OUT- Negative audio output. B1, B2 VCC Power supply. C1 IN- Negative audio input. C2 SDB Enter in shutdown mode when active low. C3 OUT+ Positive audio output. Copyright © 2011 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized; b.) the user assume all such risks; and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances Integrated Silicon Solution, Inc. – www.issi.com Rev. 00A, 05/02/2012 3 IS31AP2010E ORDERING INFORMATION Industrial Range: -40°C to +85°C Order Part No. Package QTY/Reel IS31AP2010E-UTLS2-TR UTQFN-9, Lead-free 3000 Integrated Silicon Solution, Inc. – www.issi.com Rev. 00A, 05/02/2012 4 IS31AP2010E ABSOLUTE MAXIMUM RATINGS Supply voltage, VCC Voltage at any input pin Junction temperature, TJMAX Storage temperature range, Tstg -0.3V ~ +6.0V -0.3V ~ VCC+0.3V +150°C -65°C ~ +150°C Note: 1. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS VCC = 2.7V ~ 5.5V, TA = 25°C, unless otherwise noted. (Note 1) Symbol Parameter VCC Supply voltage VOS Output offset voltage (measured differentially) ICC Quiescent current ISD Shutdown current fsw Switching frequency RIN Input resistor Gain Condition Min. Typ. 2.7 VSDB = 0V, AV = 2V/V 10 VCC = 5.5V, no load 2.6 VCC = 2.7V, no load 1.2 VSDB = 0.4V Max. Unit 5.5 V mV mA 1 250 Gain 20V/V kHz 15 RIN = 150kΩ μA kΩ 2 V/V VIH High-level input voltage 1.4 VCC V VIL Low-level input voltage 0 0.4 V Integrated Silicon Solution, Inc. – www.issi.com Rev. 00A, 05/02/2012 5 IS31AP2010E ELECTRICAL CHARACTERISTICS TA = 25°C, Gain = 2V/V, CIN = 2μF, unless otherwise noted. (Note 2) Symbol Parameter Condition THD+N = 10% f = 1kHz, RL = 8Ω THD+N = 10% f = 1kHz, RL = 4Ω PO Output power THD+N = 1% f = 1kHz, RL = 8Ω THD+N = 1% f = 1kHz, RL = 4Ω Min. Typ. VCC = 5.0V 1.68 VCC = 4.2V 1.2 VCC = 3.6V 0.88 VCC = 5.0V 3.0 VCC = 4.2V 2.0 VCC = 3.6V 1.5 VCC = 5.0V 1.4 VCC = 4.2V 1.0 VCC = 3.6V 0.7 VCC = 5.0V 2.4 VCC = 4.2V 1.68 VCC = 3.6V 1.2 VCC = 4.2V, PO = 0.6W, RL = 8Ω, f = 1kHz 0.18 VCC = 4.2V, PO = 1.1W, RL = 4Ω, f = 1kHz 0.22 Max. Unit W W W W THD+N Total harmonic distortion plus noise VNO Output voltage noise VCC = 4.2V, f = 20Hz to 20kHz Inputs AC-grounded 80 μVrms TWU Wake-up time shutdown VCC = 3.6V 32 ms SNR Signal-to-noise ratio PO = 1.0W, RL = 8Ω, VCC = 4.2V 91 dB from Power supply rejection f = 217Hz，RL = 8Ω PSRR ratio Input grounded VCC = 5.0V -75 VCC = 4.2V -70 VCC = 3.6V -66 % dB Note 1: All parts are production tested at TA = 25°C. Other temperature limits are guaranteed by design. Note 2: Guaranteed by design. Integrated Silicon Solution, Inc. – www.issi.com Rev. 00A, 05/02/2012 6 IS31AP2010E PACKAGING INFORMATION UTQFN-9 Note: All dimensions in millimeters unless otherwise stated. Integrated Silicon Solution, Inc. – www.issi.com Rev. 00A, 05/02/2012 7