BAS85 Silicon Schottky Barrier Diode MINI MELF Features For general applications Low turn-on voltage PN junction guard ring Mechanical Data Dimension in millimeters Glass case Weight: 0.05g (approx) Maximum Ratings and Electrical Characteristics Rating at 25oCambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol Value Continuous reverse voltage Characteristic VR 30 V Forward continuous current* IF 200 mA IFM 300 mA @ tp = 1s IFSM 600 mA @ TA = 65°C Ptot 200 mW Tj 125 °C TA -65 to +125 °C TSTG -65 to +150 °C Peak forward current* Surge forward current* Power dissipation* Junction temperature Operating temperature range Storage temperature range Electrical Characteristics Unit @ Tj = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit V(BR)R 30 — — V Reverse breakdown voltage 10 mA pulses * Valid provided that electrodes are kept at ambient temperature. http://www.luguang.cn mail:[email protected] BAS85 Silicon Schottky Barrier Diode Characteristics (Tj = 25_C unless otherwise specified) PR – Reverse Power Dissipation ( mW ) 200 1000 180 VR = 30 V IF – Forward Current ( A ) 160 140 PR–Limit @100%VR 120 RthJA= 540K/W 100 80 PR–Limit @80%VR 60 40 Tj = 150°C 100 Tj = 25°C 10 1 20 0.1 0 25 50 75 100 125 150 Tj – Junction Temperature ( °C ) 15822 0 Figure 1. Max. Reverse Power Dissipation vs. Junction Temperature 1.0 1.5 Figure 3. Forward Current vs. Forward Voltage 10 1000 VR = VRRM f=1MHz 9 CD – Diode Capacitance ( pF ) I R – Reverse Current ( mA ) 0.5 VF – Forward Voltage ( V ) 15824 100 10 8 7 6 5 4 3 2 1 1 25 15823 50 75 100 125 Tj – Junction Temperature ( °C ) Figure 2. Reverse Current vs. Junction Temperature http://www.luguang.cn 0 0.1 150 15825 1.0 10.0 100.0 VR – Reverse Voltage ( V ) Figure 4. Diode Capacitance vs. Reverse Voltage mail:[email protected]