LUGUANG ER1DB

ER1AB-ER1JB
Surface Mount Rectifiers
VOLTAGE RANGE: 100 --- 600 V
CURRENT: 1.0 A
SMB
Features
4.7± 0.25
Low cost
High current capability
3.6± 0.3
2.0± 0.15
Low leakage
Low forward voltage drop
Easily cleaned with alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
5.4± 0.2
2.3± 0.15
Mechanical Data
Case:JEDEC SMB,molded plastic
Polarity: Color band denotes cathode
Weight: 0.003 ounces, 0.093 grams
0.2± 0.05
0.203MAX
1.3± 0.2
Mounting position: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
ER1AB ER1BB ER1CB ER1DB ER1EB ER1GB ER1HB ER1JB UNITS
Maximum recurrent peak reverse voltage
V RRM
50
100
150
200
300
400
500
600
V
Maximum RMS voltage
V RMS
35
70
105
140
210
280
350
420
V
Maximum DC blocking voltage
V DC
50
100
150
200
300
400
500
600
V
Maximum average forw ard rectified current
@T A=75
IF(AV)
1.0
A
IFSM
30.0
A
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@TJ =125
Maximum instantaneous forw ard voltage
@ 1.0A
Maximum reverse current
at rated DC blocking voltage
@TA=25
@TA=125
VF
IR
1.25
0.95
5.0
100
1.7
V
A
Maximum reverse recovery time (Note 1)
trr
35
ns
Typical junction capacitance
(Note 2)
CJ
22
pF
Typical thermal resistance
(Note 3)
RθJA
50
TJ
- 55 ----- + 150
TSTG
- 55 ----- + 150
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I F=0.5A, I R=1A, I rr=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3.Thermal resistance junction to ambient.
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ER1AB-ER1JB
Surface Mount Rectifiers
Ratings AND Charactieristic Curves
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
N 1.
10
N 1.
trr
+0.5A
D.U.T.
(+)
25VDC
(approx)
(-)
OSCILLOSCOPE
(NOTE 1)
1
NONINDUCTIVE
0
-0.25A
PULSE
GENERATOR
(NOTE2)
-1.0A
1cm
SET TIME BASE FOR 10/20 ns/cm
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF.
JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 .
1.0
ER1EB ER1GB
ER1AB - ER1DB
ER1HB-ER1JB
0.1
TJ=25
Pulse Width=300 µs
0.01
0
0.4
1.2
0.8
1.6
2.4
2.0
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.3 -- FORWARD DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
2.0
CURRENT, AMPERES
INSTANTANEOUS FORWARD
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
100
60
40
20
10
6
4
2
1
TJ=25
f=1.0MHz
0.1 0.2 0.4
1
2
4
10
20
40
100
REVERSE VOLTAGE,VOLTS
1.0
0.5
Single Phase
Half Wave 60H Z
Resistive or
Inductive Load
0.375"(9.5mm)Lead length
0
0
25
50
75
100
125
30
25
8.3ms Single Half
Sine-Wave
20
15
10
5
0
1
5
10
INSTANTANEOUS REVERSE
CURRENT, MICROAMPERES
TJ=100
100
TJ=75
1.0
TJ=25
0
20 40
60
80
100 120
PERCENT OF RATED PEAK REVERSE VOLTAGE.
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20
50
100
NUMBER OF CYCLES AT 60Hz
1000
0.1
175
AMBIENT TEMPERATURE,
FIG.6 -- TYPICAL REVERSE CHARACTERISTICS
10
150
FIG.5 -- PEAK FORWARD SURGE CURRENT
PEAK FORWARD SURGE
CURRENT, AMPERES
JUNCTION CAPACITANCE,pF
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
z
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