1N5826 thru 1N5828R Naina Semiconductor Ltd. Schottky Power Diode, 15A Features • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity DO-203AB (DO-5) Maximum Ratings (TJ = 25oC, unless otherwise noted) Parameter Repetitive peak reverse voltage Test Conditions Symbol VRRM 1N5826(R) 20 1N5827(R) 30 1N5828(R) 40 Units V VRMS 14 21 28 V TC ≤ 100 C VDC IF 20 15 30 15 40 15 V A TC = 25oC IFSM 500 500 500 A VF 0.45 0.47 0.5 V IR 10 250 10 250 10 250 mA RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, half-sine wave o IF = 15 A TJ = 25oC VR = 20V, TJ = 25oC VR = 20V, TJ = 125oC Forward voltage Reverse current Thermal & Mechanical Specifications (TJ = 25oC, unless otherwise noted) Parameters Maximum thermal resistance, junction to case Operating junction temperature range Storage temperature Symbol Rth(JC) TJ Tstg 1N5826(R) 1N5827(R) 1.8 -65 to 150 -65 to 175 1N5828(R) Units o C/W o C o C Mounting torque (non-lubricated threads) F 4.0 Nm Approximate allowable weight W 17.0 g 1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653 [email protected] • www.nainasemi.com Naina Semiconductor Ltd. 1N5826 thru 1N5828R Package Outline ALL DIMENSIONS IN MM 2 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653 [email protected] • www.nainasemi.com