1 1N5831 Naina Semiconductor emiconductor Ltd. Schottky Barrier Rectifier Diode Features • Fast Switching • Low forward voltage drop, VF • Guard ring protection • High surge capacity • High efficiency, low power loss Electrical Ratings (TC = 250C, unless otherwise noted) Parameter Symbol Values Units 40 V VRSM 48 V IF(AV) 25 A IFSM 800 A Repetitive peak reverse voltage VRRM DC blocking voltage VDC Non-repetitive peak reverse voltage Average rectified forward current (TC = 85OC) Non-repetitive peak surge current (surge applied at rated load conditions, halfwave, single phase, 60 Hz DO-203AA 203AA (DO (DO-4) Maximum Ratings (TC = 250C, unless otherwise noted) Parameter Test Conditions Symbol IF = 10 A Maximum instantaneous forward voltage VF IF = 25 A IF = 78.5 A Values Units 0.38 V 0.48 0.82 V V 20 mA 150 mA O Maximum instantaneous reverse current at rated DC voltage TC = 25 C IR TC = 100OC Thermal & Mechanical Specifications (TE = 250C, unless otherwise noted) Parameters Maximum thermal resistance, junction to case Operating junction temperature range Storage temperature Mounting torque (non-lubricated threads) Approximate allowable weight Symbol Rth(JC) Values 1.75 TJ Tstg -65 65 to +125 -65 65 to +125 15 45.6 W Units 0 C/W 0 C C in-lb g 0 Naina Semiconductor emiconductor Ltd. ALL DIMENSIONS IN MM 1 1N5831