IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4232 Vorläufige Daten / Preliminary Data Wesentliche Merkmale • IR-Lichtquelle mit hohem Wirkungsgrad • Chipgröße (emittierende Fläche) 1 x 1 mm2 • max. Gleichstrom 1 A • niedriger Wärmewiderstand (9 K/W) • Schwerpunktswellenlänge 850 nm • ESD-sicher bis 2 kV nach JESD22-A114-E Features • IR lightsource with high efficiency • die-size (emitting area) 1 x 1 mm2 • max. DC-current 1 A • Low thermal resistance (9 K/W) • Center of spectral emission at 850 nm • ESD save up to 2 kV acc. to JESD22-A114-E Anwendungen Applications • • • • • • • • Infrarotbeleuchtung für Kameras Überwachungssysteme Fahrer-Assistenz Systeme Beleuchtung für Bilderkennungssysteme Infrared Illumination for cameras Surveillance systems Driver assistance systems Machine vision systems Sicherheitshinweise Safety Advices Je nach Betriebsart emittieren diese Bauteile hochkonzentrierte, nicht sichtbare InfrarotStrahlung, die gefährlich für das menschliche Auge sein kann. Produkte, die diese Bauteile enthalten, müssen gemäß den Sicherheitsrichtlinien der IEC-Normen 60825-1 und 62471 behandelt werden. Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 60825-1 and IEC 62471. Typ Type Bestellnummer Ordering Code Gesamtstrahlungsfluss1) (IF = 1A, tp = 10 ms) Total Radiant Flux1) Φe (mW) SFH 4232 Q65110A8754 ≥ 320 (typ. 530) 1) gemessen mit Ulbrichtkugel / measured with integrating sphere 2009-09-08 1 SFH 4232 Grenzwerte (TA = 25 °C) Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top , Tstg – 40 … + 100 °C Sperrschichttemperatur Junction temperature TJ + 125 °C Sperrspannung Reverse voltage VR 1 V Vorwärtsgleichstrom Forward current IF 1 A Stoßstrom, tp < 200 µs, D = 0 Surge current IFSM 5 A Leistungsaufnahme Power consumption Ptot 1.8 W Wärmewiderstand Sperrschicht - Lötstelle Thermal resistance junction - soldering point RthJS 9 K/W Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Wellenlänge der Strahlung Wavelength at peak emission IF = 1 A, tp = 10 ms λpeak 860 nm Schwerpunktswellenlänge der Strahlung Centroid wavelength IF = 1 A, tp = 10 ms λcentroid 850 nm Spektrale Bandbreite bei 50% von Imax Spectral bandwidth at 50% of Imax IF = 1 A, tp = 10 ms Δλ 30 nm Abstrahlwinkel Half angle ϕ ± 60 Grad deg. Aktive Chipfläche Active chip area A 1 mm2 Abmessungen der aktiven Chipfläche Dimension of the active chip area L×B L×W 1×1 mm² Kennwerte (TA = 25 °C) Characteristics 2009-09-08 2 SFH 4232 Kennwerte (TA = 25 °C) Characteristics (cont’d) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Schaltzeiten, Ie von 10% auf 90% und von 90% auf 10%, IF = 5 A, RL = 50 Ω Switching times, Ιe from 10% to 90% and from 90% to 10%, IF = 5 A, RL = 50 Ω t r / tf 7 / 14 ns VF VF 1.5 (< 1.8) 2.0 (< 2.9) V V Strahlstärke Radiant intensity IF = 1 A, tp = 100 μs Ie typ 180 mW/sr Temperaturkoeffizient von Ie bzw. Φe Temperature coefficient of Ie or Φe IF = 1 A, tp = 10 ms TCI – 0.3 %/K Temperaturkoeffizient von VF Temperature coefficient of VF IF = 1 A, tp = 10 ms TCV –1 mV/K Temperaturkoeffizient von λ Temperature coefficient of λ IF = 1 A, tp = 10 ms TCλ,centroid + 0.3 nm/K Durchlassspannung Forward voltage IF = 1 A, tp = 100 µs IF = 5 A, tp = 100 µs 2009-09-08 3 SFH 4232 Gesamtstrahlungsfluss1) Φe Total Radiant Flux1) Φe Bezeichnung Parameter Symbol Φe min Φe max Gesamtstrahlungsfluss Total Radiant Flux IF = 1 A, tp = 10 ms 1) Werte Values -CB -DA -DB 320 500 400 630 500 800 Nur eine Gruppe in einer Verpackungseinheit (Streuung kleiner 1.6:1) / Only one group in one packing unit (variation lower 1.6:1) Abstrahlcharakteristik Radiation Characteristics Irel = f (ϕ) 40˚ 30˚ 20˚ 10˚ 0˚ ϕ 50˚ OHL01660 1.0 0.8 0.6 60˚ 0.4 70˚ 0.2 80˚ 0 90˚ 100˚ 1.0 0.8 2009-09-08 0.6 0.4 0˚ 20˚ 40˚ 60˚ Einheit Unit 80˚ 100˚ 4 120˚ mW mW SFH 4232 Relative spektrale Emission Relative Spectral Emission Irel = f (λ) OHF04132 100 % I rel Durchlassstrom Forward Current IF = f (VF) Single pulse, tp = 100 μs IF Relativer Gesamtstrahlungsfluss Relative Total Radiant Flux Φe/Φe(1000mA) = f (IF) Single pulse, tp = 100 μs OHF03847 10 1 A OHF03848 101 Φe Φe (1 A) 80 100 10 0 5 60 10-1 5 40 10 -1 10-2 20 5 10 -2 0 700 750 800 850 nm 950 0 0.5 1 λ IF Zulässige Impulsbelastbarkeit Permissible Pulse Handling Capability IF = f (tp), TS = 85 °C, Duty cycle D = parameter OHF03863 IF 1.0 OHF04177 5.5 A t D = TP 4.5 3.0 2.5 2.0 0.4 IF T 0.005 0.01 0.02 0.05 0.1 0.2 0.33 0.5 1 3.5 0.6 tP D= 4.0 0.8 1.5 1.0 0.2 0.5 0 0 20 40 60 80 ˚C 120 0 -5 10 10-4 10-3 10-2 10-1 100 101 s 102 tp TS 2009-09-08 5 5 10 -1 5 10 0 A 10 1 IF VF Max. zulässiger Durchlassstrom Max. Permissible Forward Current IF = f (TA), RthJS = 9 K/W 1.2 A 10-3 -2 10 2 V 2.5 1.5 SFH 4232 Maßzeichnung1) Package Outlines 0...0.1 (0.004) 0.29 (0.011) 0.24 (0.009) Cathode 1.9 (0.075) 0.65 (0.026) 0.45 (0.018) 1.1 (0.043) 1.7 (0.067) 0.9 (0.035) 2.0 (0.079) 6.8 (0.268) (R0.85 (0.033)) 0.8 (0.031) (ø4.2 (0.165)) 5.35 (0.210) 5.25 (0.206) ø0.81 (0.031) ø0.73 (0.028) 11.2 (0.441) 10.8 (0.425) 1.2 (0.047) 5.8 (0.228) 4.25 (0.167) 4.15 (0.163) 7.2 (0.283) 6.2 (0.244) 1.6 (0.063) GPLY7072 Kathodenkennung: Cathode mark: Gewicht / Approx. weight: Markierung mark 0.2 g Gurtung / Polarität und Lage Method of Taping / Polarity and Orientation Verpackungseinheit 800/Rolle, ø180 mm Packing unit 800/reel, ø180 mm 6.35 (0.250) 7.35 (0.289) 0.3 (0.012) 24 (0.945) 2 (0.079) 0.3 (0.012) 12.4 (0.488) 1.55 (0.061) 11.5 (0.453) 4 (0.157) 1.75 (0.069) Cathode/Collector Side 1.9 (0.075) 8 (0.315) OHAY0508 1) Maße in mm (inch) / Dimensions in mm (inch) 2009-09-08 6 SFH 4232 Empfohlenes Lötpaddesign Recommended Solder Pad Design 1.6 (0.063) 10 (0.394) 2.3 (0.091) 11.6 (0.457) 2.3 (0.091) 11.6 (0.457) 0.3 (0.012) 12.0 (0.472) ø2.5 (0.098) ø4.0 (0.157) ø4.0 (0.157) Heatsink attach 1.6 (0.063) Kupfer Copper Lötstopplack Solder resist 3 Lötstellen 3 solder points Thermisch optimiertes PCB Thermal enhanced PCB Footprint Lötpasten Schablone Solder paste stencil Bare Copper Freies Kupfer OHAY0681 Achtung: Anode und Heatsink sind elektrisch verbunden Attention: Anode and Heatsink are electrically connected 2009-09-08 7 SFH 4232 Lötbedingungen Soldering Conditions Vorbehandlung nach JEDEC Level 4 Preconditioning acc. to JEDEC Level 4 Reflow Lötprofil für bleifreies Löten Reflow Soldering Profile for lead free soldering (nach J-STD-020C) (acc. to J-STD-020C) OHLA0687 300 Maximum Solder Profile Recommended Solder Profile Minimum Solder Profile ˚C T 255 ˚C 240 ˚C 250 ˚C 260 ˚C +0 -5 ˚C 245 ˚C ±5 ˚C ˚C 235 ˚C +5 -0 ˚C 217 ˚C 10 s min 200 30 s max Ramp Down 6 K/s (max) 150 100 s max 120 s max 100 Ramp Up 3 K/s (max) 50 25 ˚C 0 0 50 100 150 200 250 s 300 t Published by OSRAM Opto Semiconductors GmbH Leibnizstraße 4, D-93055 Regensburg www.osram-os.com © All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2009-09-08 8