OSRAM SFH4232

IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung
High Power Infrared Emitter (850 nm)
Lead (Pb) Free Product - RoHS Compliant
SFH 4232
Vorläufige Daten / Preliminary Data
Wesentliche Merkmale
• IR-Lichtquelle mit hohem Wirkungsgrad
• Chipgröße (emittierende Fläche) 1 x 1 mm2
• max. Gleichstrom 1 A
• niedriger Wärmewiderstand (9 K/W)
• Schwerpunktswellenlänge 850 nm
• ESD-sicher bis 2 kV nach JESD22-A114-E
Features
• IR lightsource with high efficiency
• die-size (emitting area) 1 x 1 mm2
• max. DC-current 1 A
• Low thermal resistance (9 K/W)
• Center of spectral emission at 850 nm
• ESD save up to 2 kV acc. to JESD22-A114-E
Anwendungen
Applications
•
•
•
•
•
•
•
•
Infrarotbeleuchtung für Kameras
Überwachungssysteme
Fahrer-Assistenz Systeme
Beleuchtung für Bilderkennungssysteme
Infrared Illumination for cameras
Surveillance systems
Driver assistance systems
Machine vision systems
Sicherheitshinweise
Safety Advices
Je nach Betriebsart emittieren diese Bauteile
hochkonzentrierte, nicht sichtbare InfrarotStrahlung, die gefährlich für das menschliche
Auge sein kann. Produkte, die diese Bauteile
enthalten, müssen gemäß den Sicherheitsrichtlinien der IEC-Normen 60825-1 und 62471
behandelt werden.
Depending on the mode of operation, these
devices emit highly concentrated non visible
infrared light which can be hazardous to the
human eye. Products which incorporate these
devices have to follow the safety precautions
given in IEC 60825-1 and IEC 62471.
Typ
Type
Bestellnummer
Ordering Code
Gesamtstrahlungsfluss1) (IF = 1A, tp = 10 ms)
Total Radiant Flux1)
Φe (mW)
SFH 4232
Q65110A8754
≥ 320 (typ. 530)
1)
gemessen mit Ulbrichtkugel / measured with integrating sphere
2009-09-08
1
SFH 4232
Grenzwerte (TA = 25 °C)
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range
Top , Tstg
– 40 … + 100
°C
Sperrschichttemperatur
Junction temperature
TJ
+ 125
°C
Sperrspannung
Reverse voltage
VR
1
V
Vorwärtsgleichstrom
Forward current
IF
1
A
Stoßstrom, tp < 200 µs, D = 0
Surge current
IFSM
5
A
Leistungsaufnahme
Power consumption
Ptot
1.8
W
Wärmewiderstand Sperrschicht - Lötstelle
Thermal resistance junction - soldering point
RthJS
9
K/W
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Wellenlänge der Strahlung
Wavelength at peak emission
IF = 1 A, tp = 10 ms
λpeak
860
nm
Schwerpunktswellenlänge der Strahlung
Centroid wavelength
IF = 1 A, tp = 10 ms
λcentroid
850
nm
Spektrale Bandbreite bei 50% von Imax
Spectral bandwidth at 50% of Imax
IF = 1 A, tp = 10 ms
Δλ
30
nm
Abstrahlwinkel
Half angle
ϕ
± 60
Grad
deg.
Aktive Chipfläche
Active chip area
A
1
mm2
Abmessungen der aktiven Chipfläche
Dimension of the active chip area
L×B
L×W
1×1
mm²
Kennwerte (TA = 25 °C)
Characteristics
2009-09-08
2
SFH 4232
Kennwerte (TA = 25 °C)
Characteristics (cont’d)
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Schaltzeiten, Ie von 10% auf 90% und von 90%
auf 10%, IF = 5 A, RL = 50 Ω
Switching times, Ιe from 10% to 90% and from
90% to 10%, IF = 5 A, RL = 50 Ω
t r / tf
7 / 14
ns
VF
VF
1.5 (< 1.8)
2.0 (< 2.9)
V
V
Strahlstärke
Radiant intensity
IF = 1 A, tp = 100 μs
Ie typ
180
mW/sr
Temperaturkoeffizient von Ie bzw. Φe
Temperature coefficient of Ie or Φe
IF = 1 A, tp = 10 ms
TCI
– 0.3
%/K
Temperaturkoeffizient von VF
Temperature coefficient of VF
IF = 1 A, tp = 10 ms
TCV
–1
mV/K
Temperaturkoeffizient von λ
Temperature coefficient of λ
IF = 1 A, tp = 10 ms
TCλ,centroid
+ 0.3
nm/K
Durchlassspannung
Forward voltage
IF = 1 A, tp = 100 µs
IF = 5 A, tp = 100 µs
2009-09-08
3
SFH 4232
Gesamtstrahlungsfluss1) Φe
Total Radiant Flux1) Φe
Bezeichnung
Parameter
Symbol
Φe min
Φe max
Gesamtstrahlungsfluss
Total Radiant Flux
IF = 1 A, tp = 10 ms
1)
Werte
Values
-CB
-DA
-DB
320
500
400
630
500
800
Nur eine Gruppe in einer Verpackungseinheit (Streuung kleiner 1.6:1) /
Only one group in one packing unit (variation lower 1.6:1)
Abstrahlcharakteristik
Radiation Characteristics Irel = f (ϕ)
40˚
30˚
20˚
10˚
0˚
ϕ
50˚
OHL01660
1.0
0.8
0.6
60˚
0.4
70˚
0.2
80˚
0
90˚
100˚
1.0
0.8
2009-09-08
0.6
0.4
0˚
20˚
40˚
60˚
Einheit
Unit
80˚
100˚
4
120˚
mW
mW
SFH 4232
Relative spektrale Emission
Relative Spectral Emission
Irel = f (λ)
OHF04132
100
%
I rel
Durchlassstrom
Forward Current
IF = f (VF)
Single pulse, tp = 100 μs
IF
Relativer Gesamtstrahlungsfluss
Relative Total Radiant Flux
Φe/Φe(1000mA) = f (IF)
Single pulse, tp = 100 μs
OHF03847
10 1
A
OHF03848
101
Φe
Φe (1 A)
80
100
10
0
5
60
10-1
5
40
10
-1
10-2
20
5
10 -2
0
700
750
800
850
nm 950
0
0.5
1
λ
IF
Zulässige Impulsbelastbarkeit
Permissible Pulse Handling
Capability IF = f (tp), TS = 85 °C,
Duty cycle D = parameter
OHF03863
IF
1.0
OHF04177
5.5
A
t
D = TP
4.5
3.0
2.5
2.0
0.4
IF
T
0.005
0.01
0.02
0.05
0.1
0.2
0.33
0.5
1
3.5
0.6
tP
D=
4.0
0.8
1.5
1.0
0.2
0.5
0
0
20
40
60
80
˚C 120
0 -5
10 10-4 10-3 10-2 10-1 100 101 s 102
tp
TS
2009-09-08
5
5 10 -1
5 10 0
A 10 1
IF
VF
Max. zulässiger Durchlassstrom
Max. Permissible Forward Current
IF = f (TA), RthJS = 9 K/W
1.2
A
10-3 -2
10
2 V 2.5
1.5
SFH 4232
Maßzeichnung1)
Package Outlines
0...0.1 (0.004)
0.29 (0.011)
0.24 (0.009)
Cathode
1.9 (0.075)
0.65 (0.026)
0.45 (0.018)
1.1 (0.043)
1.7 (0.067)
0.9 (0.035)
2.0 (0.079)
6.8 (0.268)
(R0.85 (0.033))
0.8 (0.031)
(ø4.2 (0.165))
5.35 (0.210)
5.25 (0.206)
ø0.81 (0.031)
ø0.73 (0.028)
11.2 (0.441)
10.8 (0.425)
1.2 (0.047)
5.8 (0.228)
4.25 (0.167)
4.15 (0.163)
7.2 (0.283)
6.2 (0.244)
1.6 (0.063)
GPLY7072
Kathodenkennung:
Cathode mark:
Gewicht / Approx. weight:
Markierung
mark
0.2 g
Gurtung / Polarität und Lage
Method of Taping / Polarity and Orientation
Verpackungseinheit 800/Rolle, ø180 mm
Packing unit 800/reel, ø180 mm
6.35 (0.250)
7.35 (0.289)
0.3 (0.012)
24 (0.945)
2 (0.079)
0.3 (0.012)
12.4 (0.488)
1.55 (0.061)
11.5 (0.453)
4 (0.157)
1.75 (0.069)
Cathode/Collector Side
1.9 (0.075)
8 (0.315)
OHAY0508
1)
Maße in mm (inch) / Dimensions in mm (inch)
2009-09-08
6
SFH 4232
Empfohlenes Lötpaddesign
Recommended Solder Pad Design
1.6 (0.063)
10 (0.394)
2.3 (0.091)
11.6 (0.457)
2.3 (0.091)
11.6 (0.457)
0.3 (0.012)
12.0 (0.472)
ø2.5 (0.098)
ø4.0 (0.157)
ø4.0 (0.157)
Heatsink attach
1.6 (0.063)
Kupfer
Copper
Lötstopplack
Solder resist
3 Lötstellen
3 solder points
Thermisch optimiertes PCB
Thermal enhanced PCB
Footprint
Lötpasten Schablone
Solder paste stencil
Bare Copper
Freies Kupfer
OHAY0681
Achtung:
Anode und Heatsink sind elektrisch verbunden
Attention:
Anode and Heatsink are electrically connected
2009-09-08
7
SFH 4232
Lötbedingungen
Soldering Conditions
Vorbehandlung nach JEDEC Level 4
Preconditioning acc. to JEDEC Level 4
Reflow Lötprofil für bleifreies Löten
Reflow Soldering Profile for lead free soldering
(nach J-STD-020C)
(acc. to J-STD-020C)
OHLA0687
300
Maximum Solder Profile
Recommended Solder Profile
Minimum Solder Profile
˚C
T
255 ˚C
240 ˚C
250
˚C
260 ˚C +0
-5 ˚C
245 ˚C ±5 ˚C
˚C
235 ˚C +5
-0 ˚C
217 ˚C
10 s min
200
30 s max
Ramp Down
6 K/s (max)
150
100 s max
120 s max
100
Ramp Up
3 K/s (max)
50
25 ˚C
0
0
50
100
150
200
250
s
300
t
Published by
OSRAM Opto Semiconductors GmbH
Leibnizstraße 4, D-93055 Regensburg
www.osram-os.com
© All Rights Reserved.
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1
A critical component is a component usedin a life-support device or system whose failure can reasonably be expected
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2
Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
2009-09-08
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