GaN-SiC Pallet Amplifier RTP23010-12 Product Features Application • Doherty amplifier design • GaN on SiC HEMT • Small and light weight • 50 Ohm Input/Output impedance matched • Highly reliable and rugged design • High efficiency, High Gain • 8~10W typical PAVG • WiMAX DPD amplifier • General purpose RF amplifier Description RTP23010-12 has been designed for RF system application frequencies from 2300MHz to 2400MHz, with high gain. This DPD application Pallet Amplifier has been developed with GaN on SiC HEMT technology that has advantages of high breakdown voltage, high linearity, and high efficiency. Electrical Specifications @ VDD=+30VDC, T=25°C, 50Ω PARAMETER Symbol Min Typ Max Unit Frequency Range BW 2300 - 2400 MHz Output Power PAVG - 8 10 Watt Output Power @ Psat G.C.P Psat - 60 - Watt Small Signal Gain SSG 58 60 - dB Small Signal Gain Flatness ΔG - ± 1.0 ±2 dB Gain Variation ΔGt ACLR @ WiMAX 10MHz 2FA ACLR ACLR with DPD ACLR Forward Coupling FC -32 -31 -30 dB Operating Voltage VDC 28 30 - Volt Efficiency @ Pout 10Watt(PAR 8.0dB) E - 35 - % -23 ± 3.0 dB -25 dBr -46 dBr ※ Test Signal Condition: WiMAX 10MHz 2FA (PAR 8.0dB), Test DPD solution : TI DPD Environmental Characteristics PARAMETER Symbol Min Typ Max Unit Operating Temperature Tc -30 - +60 °C Storage Temperature Ts -40 - +90 °C Mechanical Specifications PARAMETER Value Units Limits Dimensions ( L x W x H ) 130 x 80 x 18.8 mm Max Weight 300 g Typical RF Connectors In/Out SMA Female RF Connector Coupling MCX Female DC Connectors / Controls MDF7-10S-2.54DSA Cooling External Heat sink + airflow ▪ Tel : 82-31-250-5011 ▪ All specifications may change without notice. ▪ [email protected] ▪ Version 0.5