RFHA1020 280W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology RF OUT VD Pin 2 GND BASE Supports Multiple Pulse Conditions RF IN VG Pin 1 (CUT) 10% to 20% Duty Cycle 100s to 1ms Pulse Width Integrated Matching Components for High Terminal Impedances 50V Operation Typical Performance: Output Pulsed Power: 280W Pulse Width: 100s, Duty Cycle 10% Small Signal Gain: 15dB High Efficiency (55%) - 40°C to 85°C Operating Temperature Functional Block Diagram Product Description The RFHA1020 is a 50V 280W high power discrete amplifier designed for L-band pulsed radar, air traffic control and surveillance and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high performance amplifiers achieve high output power, high efficiency, and flat gain over a broad frequency range in a single package. The RFHA1020 is a matched power transistor packaged in a hermetic, flanged ceramic package. The package provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of single, optimized matching networks that provide wideband gain and power performance in a single amplifier. Applications Radar Air Traffic Control and Surveillance General Purpose Broadband Amplifiers Ordering Information RFHA1020S2 RFHA1020SB RFHA1020SQ RFHA1020SR RFHA1020TR13 RFHA1020PCBA-410 2-Piece sample bag 5-Piece bag 25-Piece bag 50 Pieces on 7” short reel 250 Pieces on 13” reel Fully assembled evaluation board 1.2GHz to 1.4GHz; 50V operation Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT BiFET HBT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc. DS120508 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 1 of 10 RFHA1020 Absolute Maximum Ratings Parameter Rating Unit Drain Voltage (VD) 150 V Gate Voltage (VG) -8 to +2 V Gate Current (IG) 155 mA Operational Voltage 55 V Ruggedness (VSWR) 10:1 Storage Temperature Range -55 to +125 °C Operating Temperature Range (TC) -40 to +85 °C Operating Junction Temperature (TJ) 250 °C Human Body Model Class 1A MTTF (TJ < 200°C) MTTF (TJ < 250°C) 3.0E + 06 1.4E + 05 Hours TC = 85°C, DC bias only 0.90 °C/W TC = 85°C, 100s pulse, 10% duty cycle 0.18 Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. Thermal Resistance, Rth (junction to case) 0.34 TC = 85°C, 1ms pulse, 10% duty cycle * MTTF - median time to failure for wear-out failure mode (30% IDSS degradation) which is determined by the technology process reliability. Refer to product qualification report for FIT(random) failure rate. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values. Bias Conditions should also satisfy the following expression: PDISS < (TJ - TC)/RTH J-C and TC = TCASE Parameter Min. Specification Typ. Max. Unit Condition Recommended Operating Conditions Drain Voltage (VDSQ) Gate Voltage (VGSQ) -8 Drain Bias Current Frequency of Operation -3 50 V -2 V 1400 MHz 2 mA VG = -8V, VD = 0V 2.5 mA VG = -8V, VD = 50V 440 1200 mA DC Functional Test IG (OFF) – Gate Leakage ID (OFF) – Drain Leakage VGS (TH) – Threshold Voltage -3.5 V VD = 50V, ID = 40mA VDS (ON) – Drain Voltage at High Current 0.28 V VG = 0V, ID = 1.5A 14 dB f = 1200MHz, PIN = 30dBm dB f = 1200MHz, PIN = 41.7dBm dB f = 1200MHz, PIN = 41.7dBm RF Functional Test [1], [2] Small Signal Gain Power Gain 12.3 Input Return Loss -8 Output Power 54 Drain Efficiency 48 2 of 10 50 - 5.5 dBm f = 1200MHz, PIN = 41.7dBm % f = 1200MHz, PIN = 41.7dBm 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS120508 RFHA1020 Parameter Min. Specification Typ. Max. Unit RF Functional Test (continued) [1], [2] Small Signal Gain 15 Power Gain 12.3 Input Return Loss -10 Output Power 54 Drain Efficiency 48 Small Signal Gain -6 55 14 Power Gain 12.3 Input Return Loss -8 Output Power 54 Drain Efficiency 48 -5.5 55 dB f = 1300MHz, PIN = 30dBm dB f = 1300MHz, PIN = 41.7dBm dB f = 1300MHz, PIN = 41.7dBm dBm f = 1300MHz, PIN = 41.7dBm % f = 1300MHz, PIN = 41.7dBm dB f = 1400MHz, PIN = 30dBm dB f = 1400MHz, PIN = 41.7dBm dB f = 1400MHz, PIN = 41.7dBm dBm f = 1400MHz, PIN = 41.7dBm % f = 1400MHz, PIN = 41.7dBm RF Typical Performance [1], [2] Frequency Range 1200 1400 Small Signal Gain 15 Power Gain 13 Gain Variation with Temperature Output Power (PSAT) Drain Efficiency Condition MHz dB dB -0.015 dB/°C PIN = 30dBm POUT = 54.50dBm At peak output power 54.50 dBm Peak output power 280 W Peak output power 55 % At peak output power [1] Test Conditions: PW = 100s, DC = 10%, VDSQ = 50V, IDQ = 440mA, T = 25°C. [2] Performance in a standard tuned test fixture. DS120508 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 3 of 10 RFHA1020 Typical Performance in Standard Fixed Tune Test Fixture (T = 25°C, unless otherwise noted) Efficiency versus Output Power (f = 1300MHz) Gain versus Output Power (f = 1300MHz) (Pulsed 10% duty cycle, 1mS, VD = 50V, IDQ= 440mA) (Pulsed 10% duty cycle, 1mS, VD = 50V, IDQ = 440mA) 19 70 18 60 Eff 85°C Eff 25°C 17 Eff -40°C Drain Efficiency (%) Gain (dB) 50 16 15 40 30 14 Gain 85°C Gain 25°C 20 13 Gain -40°C 12 10 45 46 47 48 49 50 51 Output Power (dBm) 52 53 54 55 45 46 Input Return Loss versus Output Power (f = 1300MHz) 47 48 49 50 51 Output Power (dBm) 52 53 54 55 Small Signal Performance versus Frequency, POUT = 44dBm (Pulsed 10% duty cycle, 100μS, VD = 50V, IDQ = 440mA) (Pulsed 10% duty cycle, 1mS, VD = 50V, IDQ = 440mA) -6 19 -8 18 -2 Fixed tuned test circuit -4 -14 -16 Gain (dB) IRL, Input Return Loss (dB) -12 -18 -20 -22 -24 IRL 85°C 17 -6 16 -8 15 -10 14 -12 13 -14 12 IRL 25°C -16 -26 Gain -30 45 46 47 48 IRL 11 IRL -40°C -28 49 50 51 Output Power (dBm) 52 53 54 10 1200 55 Input Return Loss (dB) -10 -18 1220 1240 1260 1280 1300 1320 Frequency (MHz) 1340 1360 1380 -20 1400 1380 1400 Drain Efficiency versus Frequency, POUT = 54dBm Gain/IRL versus Frequency, POUT = 54dBm (Pulsed 10% duty cycle, 100μS, VD = 50V, IDQ = 440mA) (Pulsed 10% duty cyle, 100μS, VD = 50V, IDQ = 440mA) 60 -6 18 Fixed tuned test circuit 59 Fixed tuned test circuit -8 17 -10 15 -12 14 -14 13 -16 Drain Efficiency (%) 16 Input Return Loss (dB) Gain (dB) 58 57 56 55 54 53 52 Gain 12 IRL -18 Eff 51 11 1200 4 of 10 1220 1240 1260 1280 1300 1320 Frequency (MHz) 1340 1360 1380 -20 1400 50 1200 1220 1240 1260 1280 1300 1320 Frequency (MHz) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 1340 1360 DS120508 RFHA1020 Gain/ Efficiency versus POUT , f = 1300MHz POUT/DE versus Pulse Width, f = 1300MHz (Pulsed 10% duty cycle, 100μS, VD = 50V, IDQ = 440mA) (Pulsed 10% duty cycle, VD = 50V, IDQ = 440mA) 18 70 320 70 310 17 60 300 65 290 40 14 60 270 POUT (W) 15 280 260 55 250 30 240 Drain Efficiency(%) 50 Drain Efficiency (%) Gain (dB) 16 50 230 Gain 13 Drain Eff 20 12 10 45 46 47 48 49 50 51 Output Power (dBm) 52 53 54 220 Output Power 210 Drain Efficiency 45 200 55 40 10 100 1000 Pulse Width (usec) POUT/DE versus Duty Cycle, f = 1300MHz 70 325 65 300 60 275 55 250 50 225 Drain Efficiency(%) POUT(W) (Pulsed, 100μs pulse, VD = 50V, IDQ = 440mA) 350 45 Output Power Drain Efficiency 200 40 10 20 30 40 50 60 Duty Cycle (%) PulsePowerDissipationDeratingCurve (BasedonMaximumpackagetemperatureandRth) 1200 1mSPulseWidth,10%DutyCycle 1000 PowerDissipation(W) 100SPulseWidth,10%DutyCycle 800 600 400 200 0 0 20 40 60 80 100 120 140 MaximumCaseTemperature(°C) DS120508 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 5 of 10 RFHA1020 Package Drawing (All dimensions in mm) Pin Names and Descriptions Pin 1 2 3 6 of 10 Name VG VD GND Description Gate – VG RF Input Drain – VD RF Output Source – Ground Base 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS120508 RFHA1020 Bias Instruction for RFHA1020 Evaluation Board ESD Sensitive Material. Please use proper ESD precautions when handling devices of evaluation board. Evaluation board requires additional external fan cooling. Connect all supplies before powering up the evaluation board. 1. Connect RF cables at RFIN and RFOUT. 2. Connect ground to the ground supply terminal, and ensure that both the VG and VD grounds are also connected to this ground terminal. 3. Apply -8V to VG. 4. Apply 50V to VD. 5. Increase VG until drain current reaches 440mA or desired bias point. 6. Turn on the RF input. IMPORTANT NOTE: Depletion mode device; when biasing the device, VG must be applied before VD. When removing bias, VD must be removed before VG is removed. Failure to follow this sequence will cause the device to fail. NOTE: For optimal RF performance, consistent and optimal heat removal from the base of the package is required. A thin layer of thermal grease should be applied to the interface between the base of the package and the equipment chassis. It is recommended that a small amount of thermal grease is applied to the underside of the device package. Even application and removal of excess thermal grease can be achieved by spreading the thermal grease using a razor blade. The package should then be bolted to the chassis and input and output leads soldered to the circuit board. DS120508 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 7 of 10 RFHA1020 Evaluation Board Schematic VDRAIN VGATE C8 C7 + R2 C6 + C18 R1 C5 C4 C3 C2 C12 R4 C13 L21 L20 L22 L23 R3 C14 C17 C15 L2 J1 RF IN 50 strip RFHA1020 C1 C22 C16 C19 L1 C21 C11 50 strip J2 RF OUT C20 Evaluation Board Bill of Materials 8 of 10 Component Value Manufacturer Part Number R1, R4 10 Panasonic ERJ-8GEYJ100V R2 0 Panasonic ERJ-8GEY0R00 R3 51 Panasonic ERJ-8GEYJ510 C1, C2, C11, C13 82pF Dialectric Labs 800A820JT C17 56pF ATC ATC800A560JT C5 0.1F Panasonic ECJ-2VB1H104K C6, C15 10000pF Panasonic ECJ-2VB1H103K C16 0.1F Panasonic ECJ-2VB1H104K C8, C18 10F Panasonic ECA-2AM100 C20 3.9pF ATC 800A3R9CT C21 1.1pF ATC 800A1R1BT C22 0.3pF ATC 800A0R3BT L20, L21 115, 10A Steward 28F0181-1SR-10 L22, L23 75, 10A Steward 35F0121-1SR-10 C3, C4, C7, C12, C14, C19 NOT POPULATED 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS120508 RFHA1020 Evaluation Board Layout Device Impedances Frequency Z Source () 1200MHz 10.7 - j5.0 Z Load ( 33.9 - j10 1300MHz 9.48 - j3.24 34.2 - j10.9 1400MHz 8.2 - j1.2 34.5 - j12.33 Note: Device impedances reported are the measured evaluation board impedances chosen for a tradeoff of efficiency, peak power, and linear performance across the entire frequency bandwidth. EvaluationBoard Matching Network EvaluationBoard Matching Network ZSOURCE DS120508 ZLOAD 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 9 of 10 RFHA1020 Device Handling/Environmental Conditions GaN HEMT devices are ESD sensitive materials. Please use proper ESD precautions when handling devices or evaluation boards. GaN HEMT Capacitances The physical structure of the GaN HEMT results in three terminal capacitors similar to other FET technologies. These capacitances exist across all three terminals of the device. The physical manufactured characteristics of the device determine the value of the CDS (drain to source), CGS (gate to source) and CGD (gate to drain). These capacitances change value as the terminal voltages are varied. RFMD presents the three terminal capacitances measured with the gate pinched off (VGS = -8V) and zero volts applied to the drain. During the measurement process, the parasitic capacitances of the package that holds the amplifier is removed through a calibration step. Any internal matching is included in the terminal capacitance measurements. The capacitance values presented in the typical characteristics table of the device represent the measured input (CISS), output (COSS), and reverse (CRSS) capacitance at the stated bias voltages. The relationship to three terminal capacitances is as follows: CISS = CGD + CGS COSS = CGD + CDS CRSS = CGD DC Bias The GaN HEMT device is a depletion mode high electron mobility transistor (HEMT). At zero volts VGS the drain of the device is saturated and uncontrolled drain current will destroy the transistor. The gate voltage must be taken to a potential lower than the source voltage to pinch off the device prior to applying the drain voltage, taking care not to exceed the gate voltage maximum limits. RFMD recommends applying VGS = -5V before applying any VDS. RF Power transistor performance capabilities are determined by the applied quiescent drain current. This drain current can be adjusted to trade off power, linearity, and efficiency characteristics of the device. The recommended quiescent drain current (IDQ) shown in the RF typical performance table is chosen to best represent the operational characteristics for this device, considering manufacturing variations and expected performance. The user may choose alternate conditions for biasing this device based on performance tradeoffs. Mounting and Thermal Considerations The thermal resistance provided as RTH (junction to case) represents only the packaged device thermal characteristics. This is measured using IR microscopy capturing the device under test temperature at the hottest spot of the die. At the same time, the package temperature is measured using a thermocouple touching the backside of the die embedded in the device heatsink but sized to prevent the measurement system from impacting the results. Knowing the dissipated power at the time of the measurement, the thermal resistance is calculated. In order to achieve the advertised MTTF, proper heat removal must be considered to maintain the junction at or below the maximum of 200°C. Proper thermal design includes consideration of ambient temperature and the thermal resistance from ambient to the back of the package including heatsinking systems and air flow mechanisms. Incorporating the dissipated DC power, it is possible to calculate the junction temperature of the device. 10 of 10 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS120508