RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology 30MHz to 2500MHz Instantaneous Bandwidth RF IN Pin 2,3 RF OUT / VDS Pin 6,7 Input Internally Matched to 50 GND BASE 28V Operation Typical Performance POUT 39.5dBm Gain 12dB Power Added Efficiency 45% (30MHz to 2500MHz) Power Added Efficiency 50% (200MHz to 1800MHz) -40°C to 85°C Operating Temperature Large Signal Models Available Applications Class AB Operation for Public Mobile Radio Power Amplifier Stage for Commercial Wireless Infrastructure General Purpose Tx Amplification Test and Instrumentation Civilian and Military Radar Functional Block Diagram Product Description The RF3826 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency, flat gain and large instantaneous bandwidth in a single amplifier design. The RF3826 is an input matched GaN transistor packaged in an air cavity ceramic package which provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of optimized input matching network within the package that provides wideband gain and power performance in a single amplifier. An external output match offers the flexibility of further optimizing power and efficiency for any sub-band within the overall bandwidth. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT BiFET HBT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc. DS120418 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 1 of 15 RF3826 Absolute Maximum Ratings Parameter Rating Unit Drain Voltage (VD) 150 V Gate Voltage (VG) -8 to +2 V Gate Current (IG) 5 mA Operational Voltage 32 V RF- Input Power 34 dBm Ruggedness (VSWR) Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 12:1 Storage Temperature Range -55 to +125 Operating Temperature Range (TC) -40 to +85 °C 200 °C Operating Junction Temperature (TJ) Human Body Model Class 1B MTTF (TJ < 200°C, 95% Confidence Limits)* 3E + 06 Hours 9.8 °C/W Thermal Resistance, RTH (junction to case) measured at TC = 85°C, DC bias only RoHS (Restriction of Hazardous Substances): Compliant per EU Directive 2002/95/EC. °C * MTTF - median time to failure for wear-out failure mode (30% IDSS degradation) which is determined by the technology process reliability. Refer to product qualification report for FIT(random) failure rate. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page two. Bias Conditions should also satisfy the following expression: PDISS < (TJ - TC)/RTH J - C and TC = TCASE Parameter Min. Specification Typ. Max. 28 32 -3 -2.5 Unit Condition Recommended Operating Conditions Drain Voltage (VDSQ) Gate Voltage (VGSQ) -5 Drain Bias Current 55 V V mA RF Input Power (PIN) 32 Input Source VSWR 10:1 dBm RF Performance Characteristics Frequency Range 30 2500 MHz Small signal 3dB bandwidth Linear Gain 12 dB POUT = 30dBm Power Gain 9 dB P3DB 1 dB POUT = 30dBm, 30MHz to 2500MHz -0.02 dB/°C Gain Flatness Gain Variation with Temperature Input Return Loss (S11) Output Power (P3dB) Power Added Efficiency (PAE) 2 of 15 -10 -8 dB 39.5 dBm 45 % 30MHz to 2500MHz 30MHz to 2500MHz 50 % 200MHz to 1800MHz 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS120418 RF3826 Parameter Min. Specification Typ. Max. Unit RF Functional Tests VGS(Q) Condition [1], [2] -3 V Gain 11 dB PIN = 20dBm Power Gain 8.5 dB PIN = 31dBm Input Return Loss -10 dB Output Power 39 dBm Power Added Efficiency (PAE) 40 % [1] Test Conditions: VDSQ = 28V, IDQ = 55mA, CW, f = 2000MHz, T = 25ºC. [2] Performance in a standard tuned test fixture. DS120418 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 3 of 15 RF3826 Typical Performance in Standard Fixed Tuned Test Fixture Matched for 30MHz to 2500MHz (T = 25°C, unless noted) SmallSignalsparametersversusFrequency GainversusFrequency,PIN =30dBm (CW,VD =28V,IDQ =55mA) 5 15 12 0 12 9 5 6 10 Gain(dB) 0 2600 2400 2200 2000 2200 2400 2600 2200 2400 2600 2000 1800 1600 1400 800 0 2600 2400 2200 2000 1800 1600 1400 1200 800 25 1000 30 600 20 400 40 600 15 400 50 10 200 IRL,InputReturnLoss(dB) 5 60 200 85C 85qC 25C 25qC 40C 40 qC 1200 85C 85qC 25C 25qC 40qC 40C 1000 80 0 1800 (CW,VD =28V,IDQ =55mA) (CW,VD =28V,IDQ =55mA) PowerAddedEfficiency,PAE(%) 1600 InputReturnLossversusFrequency,PIN =30dBm PAEversusFrequency,PIN =30dBm Frequency(MHz) Frequency(MHz) PAEversusFrequency,POUT =39dBm Gain/IRLversusFrequency,POUT =39dBm (CW,VD =28V,IDQ =55mA) (CW,VD =28V,IDQ =55mA) 0 70 12 9 10 6 15 3 InputReturnLoss(dB) 5 PowerAddedEfficiency,PAE(%) 15 Gain(dB) 1400 Frequency(MHz) Frequency(MHz) 70 1200 0 800 20 1000 3 600 15 400 6 2600 2400 2200 2000 1800 1600 1400 1200 800 1000 600 400 200 0 0 9 200 S21 S11 S22 85C 85qC 25C 25qC 40C 40 qC 0 3 Magnitude,S11,S22 (dB) Magnitude,S21 (dB) (VD =28V,IDQ =55mA) 15 60 50 40 30 Gain IRL 4 of 15 2000 1800 1600 1400 1200 1000 800 600 400 200 2600 2400 2200 2000 1800 1600 1400 1200 800 1000 600 400 200 0 Frequency(MHz) 20 0 20 0 Frequency(MHz) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS120418 RF3826 Typical Performance in Standard Fixed Tuned Test Fixture Matched for 30MHz to 2500MHz (T = 25°C, unless noted) GainversusFrequency PowerAddedEfficiencyversusFrequency (CW,VD =28V,IDQ =55mA) (CW,VD =28V,IDQ =55mA) 60 15 50 PowerAddedEfficiency,PAE(%) 12 6 PPout=39dBm OUT PPout=35dBm OUT PPout=25dBm OUT 3 0 40 30 PPout=39dBm OUT PPout=35dBm OUT PPout=25dBm OUT 20 10 Pout=39dBm POUT Pout=35dBm POUT P Pout=25dBm OUT Gain(dB) 15 2600 2400 2200 2000 1800 1600 1400 1200 9 1000 25 800 2600 11 10 600 2400 12 20 400 2200 13 10 0 2000 14 0 200 1800 (CW,VD =28V,IDQ =55mA) (CW,VD =28V,IDQ =55mA) InputReturnLoss,IRL(dB) 1600 GainversusOutputPower InputReturnLossversusFrequency freq=50MHz freq=1200MHz freq=2000MHz 25 28 Frequency(MHz) PowerAddedEfficiencyversusOutputPower 31 34 POUT,OutputPower(dBm) 37 40 InputReturnLossversusOutputPower (CW,VD =28V,IDQ =55mA) (CW,VD =28V,IDQ =55mA) 60 0 freq=50MHz freq=1200MHz freq=2000MHz 50 freq=50MHz freq=1200MHz freq=2000MHz 5 InputReturnLoss,IRL(dB) PowerAddedEfficiency,PAE(%) 1400 Frequency(MHz) Frequency(MHz) 5 1200 800 1000 600 400 0 2600 2400 2200 2000 1800 1600 1400 1200 800 1000 600 400 0 200 0 200 Gain(dB) 9 40 30 20 10 15 20 10 0 25 25 DS120418 28 31 34 POUT,OutputPower(dBm) 37 40 25 28 31 34 POUT,OutputPower(dBm) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 37 40 5 of 15 RF3826 Typical Performance in Standard Fixed Tuned Test Fixture Matched for 30MHz to 2500MHz (T = 25°C, unless noted) IMDversusOutputPower IMDversusToneSpacing (VD =28V,IDQ =85mA,f1=1199.5MHz,f2=1200.5MHz) (POUT =9WPEP,VD =28V,IDQ =85mA) 0 10 IMD3 IMD3 IMD5 IMD5 IMD7 IMD7 IntermodulationDistortion(IMD dBc) IntermodulationDistortion(IMD dBc) 0 20 30 40 50 IMD3 IMD3 IMD5 IMD5 IMD7 IMD7 20 30 40 50 60 f1=1200MHzToneSpacing/2 f2=1200MHz+ToneSpacing/2 70 60 0.1 1 10 POUT,OutputPower(W PEP) 0.1 100 10 100 GainversusOutputPower IMD3versusOutputPower (2Tone1MHzSeparation,VD =28V,IDQ varied,fc=1200MHz) (2Tone1MHzSeparation,VD =28V,IDQ varied,fc=1200MHz) 10 IMD3,IntermodulationDistortion(dBc) 15 25mA 55mA 85mA 115mA 145mA 14 13 12 11 10 9 8 7 6 15 20 25 30 35 25mA 55mA 85mA 115mA 145mA 40 45 50 15 6 of 15 1 ToneSpacing(MHz) 16 Gain(dB) 10 20 25 30 POUT,OutputPower(dBm) 35 40 0.1 1 10 100 POUT,OutputPower(WPEP) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS120418 RF3826 Typical Performance in Standard Fixed Tuned Test Fixture Matched for 200MHz to 1800MHz (T = 25°C, unless noted) SmallSignalsparametersversusFrequency GainversusFrequency,PIN =30dBm (VD =28V,IDQ =55mA) (CW,VD =28V,IDQ =55mA) 12 0 12 9 5 6 10 0 60 5 2000 1800 2000 1800 800 600 400 200 0 2000 1800 1600 1400 1200 1000 800 600 400 25 200 85qC 85C 25qC 25C 40 qC 40C 20 1600 85C 85qC 25C 25qC 40C 40qC 15 1400 40 10 1200 50 1000 IRL,InputReturnLoss(dB) 70 0 PowerAddedEfficiency,PAE(%) 1600 (CW,VD =28V,IDQ =55mA) (CW,VD =28V,IDQ =55mA) Frequency(MHz) Frequency(MHz) Gain/IRLversusFrequency,POUT =39dBm PAEversusFrequency,POUT =39dBm (CW,VD =28V,IDQ =55mA) (CW,VD =28V,IDQ =55mA) 5 80 12 0 70 9 5 6 10 3 15 Gain PowerAddedEfficiency,PAE(%) 15 InputReturnLoss(dB) Gain(dB) 1400 InputReturnLossversusFrequency,PIN =30dBm PAEversusFrequency,PIN =30dBm 20 1200 Frequency(MHz) Frequency(MHz) 30 1000 0 800 20 85C 85qC 25C 25qC 40 qC 40C 600 3 400 15 2000 1800 1600 1400 1200 1000 800 600 400 200 0 0 6 200 S21 S11 S22 9 0 3 Gain(dB) 15 Magnitude,S11,S22 (dB) 5 Magnitude,S21 (dB) 15 60 50 40 Frequency(MHz) DS120418 2000 1800 1600 1400 1200 1000 800 600 400 30 200 20 0 2000 1800 1600 1400 1200 1000 800 600 400 200 0 IRL 0 Frequency(MHz) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 7 of 15 RF3826 Typical Performance in Standard Fixed Tuned Test Fixture Matched for 200MHz to 1800MHz (T = 25°C, unless noted) GainversusFrequency PowerAddedEfficiencyversusFrequency (CW,VD =28V,IDQ =55mA) (CW,VD =28V,IDQ =55mA) 15 70 60 PowerAddedEfficiency,PAE(%) 12 6 PPout=39dBm OUT PPout=35dBm OUT PPout=25dBm OUT 3 50 40 30 PPout=39dBm OUT PPout=35dBm OUT Pout=25dBm POUT 20 10 2000 1800 1600 1400 1200 1000 GainversusOutputPower InputReturnLossversusFrequency (CW,VD =28V,IDQ =55mA) (CW,VD =28V,IDQ =55mA) 14 0 Pout=39dBm POUT Pout=35dBm POUT P Pout=25dBm OUT 13 12 10 Gain(dB) InputReturnLoss,IRL(dB) 800 Frequency(MHz) Frequency(MHz) 5 600 0 2000 1800 1600 1400 1200 1000 800 600 400 200 0 400 0 0 200 Gain(dB) 9 15 11 10 freq=200MHz freq=1000MHz freq=1800MHz 9 20 Frequency(MHz) 8 of 15 2000 1800 1600 1400 1200 1000 800 600 400 200 25 0 8 7 28 31 34 37 POUT,OutputPower(dBm) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 40 43 DS120418 RF3826 Typical Performance in Standard Fixed Tuned Test Fixture Matched for 200MHz to 1800MHz (T = 25°C, unless noted) InputReturnLossversusOutputPower PowerAddedEfficiencyversusOutputPower (CW,VD =28V,IDQ =55mA) (CW,VD =28V,IDQ =55mA) 0 70 freq=200MHz freq=1000MHz freq=1800MHz freq=200MHz freq=1000MHz freq=1800MHz 5 InputReturnLoss,IRL(dB) PowerAddedEfficiency,PAE(%) 60 50 40 30 20 10 15 20 10 0 25 28 31 34 37 POUT,OutputPower(dBm) 40 43 28 31 34 37 POUT,OutputPower(dBm) 40 43 PowerDissipationDeratingCurve (BasedonMaximumpackagetemperatureandRTH) 25 PowerDissipation(W) 20 15 10 5 0 0 DS120418 10 20 30 40 50 60 70 MaximumCaseTemperature(°C) 80 90 100 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 9 of 15 RF3826 Package Drawing (All dimensions in mm.) A123 : Trace Code 1234 : Serial Number Package Style: Ceramic SO8 Pin Names and Descriptions Pin 1 2 3 4 5 6 7 8 Pkg Base 10 of 15 Name Description Gate DC Bias pin VGS RF Input RF IN RF Input RF IN No Connect N/C No Connect N/C RF OUT/VDS RF Output / Drain DC Bias pin RF OUT/VDS RF Output / Drain DC Bias pin No Connect N/C Ground GND 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS120418 RF3826 Bias Instruction for RF3826 Evaluation Board ESD Sensitive Material. Please use proper ESD precautions when handling devices of evaluation board. Evaluation board requires additional external fan cooling. Connect all supplies before powering evaluation board. 1. Connection RF cables at RFIN and RFOUT. 2. Connect ground to the ground supply terminal, and ensure that both the VG and VD grounds are also connected to this ground terminal. 3. Apply -5V to VG. 4. Apply 28V to VD. 5. Increase VG until drain current reaches 55mA or desired bias point. 6. Turn on the RF input. Typical test data provided is measured to SMA connector reference plane, and include evaluation board / broadband bias network mismatch and losses. DS120418 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 11 of 15 RF3826 Evaluation Board Schematic VG VD C15 C25 L24 L12 C13 C23 L11 L23 C21 R11 9 C11 50Ω Microstrip RF IN 2 3 4 C1 VG RFIN N/C RFOUT RFIN R21 L21 GND 1 R23 RFOUT N/C N/C U1 8 7 L20 50Ω Microstrip RF OUT 6 5 C20 C2 RF3826 Evaluation Board Bill of Materials Component Value C1, C2 2400pF C13 100pF C15 10F C20 0.9pF C21, C23 1000pF C25 4.7F R11 820 R21, R23 390 L11 120nH L12, L24 1H L21 82nH L23 470nH L20* 0 L20** 1.6nH C11 NOT USED *30MHz to 2500MHz RF3826PCBA-410 **200MHz to 1800 MHz RF3826PCBA-411 12 of 15 Manufacturer Part Number Dielectric Labs Inc Panasonic Murata Electronics ATC Panasonic Murata Electronics Panasonic Panasonic Coilcraft Coilcraft Coilcraft Coilcraft Panasonic Coilcraft - C08BL242X-5UN-X0 ECJ-1VC1H101J GRM21BF51C106ZE15L 100A0R9BT150XT ECJ-1VB1H102K GRM55ER72A475KA01L ERJ-3GEYJ821 ERJ-3GEYJ391 1008CS-121XJBC LPS3015-102MLB 1008CS-820XJLC EPL2014-271MLB ERJ-3GEY0R00V 0906-2 - 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS120418 RF3826 Evaluation Board Layout P1 P2 P3 Device Impedances Frequency (MHz) RF3826PCBA-410 (30MHz to 2500MHz) Z Source () Z Load () RF3826PCBA-411 (200MHz to 1800MHz) Z Source () Z Load () 30 49.8 - j1.5 41.4 + j4.6 200 49.5 - j2.0 40.1 - j2.1 49.5 - j2.0 40.2 - j1.1 500 47.3 - j4.0 44.5 + j1.3 47.3 - j4.0 44.8 + j3.5 1000 42.3 - j3.1 35.0 - j8.4 42.3 - j3.1 35.6 - j3.5 1500 39.9 + j1.1 28.2 - j4.0 39.9 + j1.1 29.8 + j3.8 1800 40.4 + j3.7 26.4 - j0.8 40.4 + j3.7 28.9 + j8.9 2000 41.0 + j5.0 25.4 + j1.1 2200 41.3 + j7.0 24.5 + j3.1 2500 44.7 + j9.3 22.9 + j6.2 NOTE: Device impedances reported are the measured evaluation board impedances chosen for a tradeoff of efficiency and peak power performance across the entire frequency bandwidth. DS120418 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 13 of 15 RF3826 Device Handling/Environmental Conditions RFMD does not recommend operating this device with typical drain voltage applied and the gate pinched off in a high humidity, high temperature environment. GaN HEMT devices are ESD sensitive materials. Please use proper ESD precautions when handling devices or evaluation boards. DC Bias The GaN HEMT device is a depletion mode high electron mobility transistor (HEMT). At zero volts VGS the drain of the device is saturated and uncontrolled drain current will destroy the transistor. The gate voltage must be taken to a potential lower than the source voltage to pinch off the device prior to applying the drain voltage, taking care not to exceed the gate voltage maximum limits. RFMD recommends applying VGS = -5V before applying any VDS. RF Power transistor performance capabilities are determined by the applied quiescent drain current. This drain current can be adjusted to trade off power, linearity, and efficiency characteristics of the device. The recommended quiescent drain current (IDQ) shown in the RF typical performance table is chosen to best represent the operational characteristics for this device, considering manufacturing variations and expected performance. The user may choose alternate conditions for biasing this device based on performance tradeoffs. Mounting and Thermal Considerations The thermal resistance provided as RTH (junction to case) represents only the packaged device thermal characteristics. This is measured using IR microscopy capturing the device under test temperature at the hottest spot of the die. At the same time, the package temperature is measured using a thermocouple touching the backside of the die embedded in the device heat sink but sized to prevent the measurement system from impacting the results. Knowing the dissipated power at the time of the measurement, the thermal resistance is calculated. In order to achieve the advertised MTTF, proper heat removal must be considered to maintain the junction at or below the maximum of 200°C. Proper thermal design includes consideration of ambient temperature and the thermal resistance from ambient to the back of the package including heat sinking systems and air flow mechanisms. Incorporating the dissipated DC power, it is possible to calculate the junction temperature of the device. 14 of 15 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS120418 RF3826 Ordering Information DS120418 Ordering Code Description RF3826S2 2-Piece sample bag RF3826SB 5-Piece bag RF3826SQ 25-Piece bag RF3826SR 100 Pieces on 7” short reel RF3826TR7 750 Pieces on 7” reel RF3826PCBA-410 Fully assembled evaluation board 30MHz to 2500MHz; 28V operation RF3826PCBA-411 Fully assembled evaluation board 200MHz to 1800MHz; 28V operation 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 15 of 15