RF3933 90W GaN WIDE-BAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Small Signal Gain = 21dB at 0.9GHz 48V Operation Typical Performance: RF IN VGQ Pin 1 (CUT) RF OUT VDQ Pin 2 GND BASE • Output Power 90W at P3dB Functional Block Diagram • Drain Efficiency 75% at P3dB • -40°C to 85°C Operation Applications Commercial Wireless Infrastructure Cellular and WiMAX Infrastructure Civilian and Military Radar General Purpose Broadband Amplifiers Public Mobile Radios Industrial, Scientific and Medical Product Description The RF3933 is a 48V, 90W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency and flat gain over a broad frequency range in a single amplifier design. The RF3933 is an unmatched GaN transistor packaged in a hermetic, flanged ceramic package. This package provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of simple, optimized matching networks external to the package that provide wideband gain and power performance in a single amplifier. Ordering Information RF3933S2 RF3933SB RF3933SQ RF3933SR RF3933TR7 RF3933PCK-411 2-piece sample bag 5-piece bag 25-piece bag 100 pieces on 7” short reel 750 pieces on 7” reel Fully assembled evaluation board optimized for 2.14GHz; 48V Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT BiFET HBT LDMOS RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc. DS120306 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 1 of 14 RF3933 Absolute Maximum Ratings Parameter Rating Unit Drain Voltage (VD) 150 V Gate Voltage (VG) -8 to +2 V Gate Current (IG) 54 mA Operational Voltage 65 V Ruggedness (VSWR) 10:1 Storage Temperature Range -55 to +125 °C Operating Temperature Range (TC) -40 to +85 °C Operating Junction Temperature (TJ) 200 °C Human Body Model Class 1A MTTF (TJ< 200 °C, 95% Confidence Limits)* 3 x 106 Hours Thermal Resistance, RTH (junction to case) measured at TC = 85°C, DC bias only 2.1 °C/W Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. * MTTF - median time to failure for wear-out failure mode (30% IDSS degradation) which is determined by the technology process reliability. Refer to product qualification report for FIT(random) failure rate. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values. Bias Conditions should also satisfy the following expression: PDISS <(TJ - TC)/RTH J-C and TC = TCASE Parameter Min. Specification Typ. Max. 48 V -3.7 -2.5 V 3500 MHz Unit Condition Recommended Operating Conditions Drain Voltage (VDSQ) 28 Gate Voltage (VGSQ) -4.5 Drain Bias Current Frequency of Operation 300 DC mA Capacitance CRSS 7 pF CISS 30 pF COSS 21 pF VG = -8V, VD = 0V DC Functional Test IG (OFF) – Gate Leakage 2 mA VG = -8V, VD = 0V ID (OFF) – Drain Leakage 2.5 mA VGS (TH) – Threshold Voltage -4.2 V VG = -8V, VD = 48V VD = 48V, ID = 20mA VDS (ON) – Drain Voltage at High Current 0.25 V VG = 0V, ID = .5A -3.4 V VD = 48V, ID =300mA RF Functional Test [1], [2] VGS (Q) Gain 10 12 dB CW, POUT = 49.5dBm, f = 2140MHz Drain Efficiency 55 60 % CW, POUT = 49.5dBm, f = 2140MHz Input Return Loss -10 -12 dB CW, POUT = 49.5dBm, f = 2140MHz 2 of 14 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS120306 RF3933 Parameter Min. Specification Typ. Max. Unit RF Typical Performance Small Signal Gain Condition [1], [2] 21 dB CW, f = 900MHz Small Signal Gain 13.5 dB CW, f = 2140MHz Output Power at P3dB 49.5 dBm CW, f = 900MHz Output Power at P3dB 49.5 dBm CW, f = 2140MHz Drain Efficiency at P3dB 75 % CW, f = 900MHz Drain Efficiency at P3dB 75 % CW, f = 2140MHz [1] Test Conditions: CW operation, VDSQ = 48V, IDQ = 300mA, T= 25°C. [2] Performance in a standard tuned test fixture. DS120306 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 3 of 14 RF3933 Typical Performance in Standard 2.14GHz Tuned Test Fixture (CW, T = 25°C, unless otherwise noted) Efficiency vs. Output Power (f = 2140MHz) Gain vs. Output Power (f = 2140MHz) (Pulsed 10% duty cycle, 10uS, Vd = 48V, Idq = 300mA) (Pulsed 10% duty cycle, 10uS, Vd = 48V, Idq = 300mA) 65 18 60 17 Drain Efficiency (%) 16 14 13 12 11 Eff -40C 50 Eff 25C 45 Eff 85C 40 35 30 25 Gain -40C 20 Gain 25C 15 Gain 85C 10 10 5 30 32 34 36 38 40 42 Output Power (dBm) 44 46 48 50 30 Input Return Loss vs. Output Power (f = 2140MHz) 32 34 38 40 42 Output Power (dBm) 48 50 0 16 -8 IRL 25C 14 -2 13 -3 12 -4 11 -5 Gain (dB) -10 -12 -16 32 34 36 38 40 42 Output Power (dBm) 44 46 48 10 -6 IRL -7 8 -8 7 -9 6 2110 50 Gain 9 2120 2130 15 Fixed tuned test circuit -6 70 66 12 -9 64 11 -10 10 -11 9 -12 8 -13 IRL 6 5 2110 2120 2130 2140 2150 Frequency (MHz) 2160 2170 Drain Efficiency (%) 68 -8 Input Return Loss (dB) -7 13 Gain 2160 -10 2170 (CW, Vd = 48V, Idq = 300mA) (CW, Vd = 48V, Idq = 300mA) 7 2140 2150 Frequency (MHz) Drain Efficiency vs. Frequency, Pout = 49.5dBm Gain/IRL vs. Frequency, Pout = 49.5dBm 14 -1 IRL -40C IRL 85C 30 Fixed tuned test circuit 15 -14 Gain (dB) 46 (Vd = 48V, Idq = 300mA) -6 4 of 14 44 Small Signal Performance vs. Frequency, Pout = 30dBm (Pulsed 10% duty cycle, 10uS, Vd = 48V, Idq = 300mA) IRL, Input Return Loss (dB) 36 Input Return Loss (dB) Gain (dB) 15 55 62 60 58 56 -14 54 -15 52 -16 2180 Fixed tuned test circuit 50 2100 Eff 2110 2120 2130 2140 2150 Frequency (MHz) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 2160 2170 2180 DS120306 RF3933 Gain/ Efficiency vs. Pout, f = 2140MHz Gain/ Efficiency vs. Pout, f = 2140MHz (CW, Vd = 48V, Idq = 300mA) (Pulsed 10% duty cycle, 10uS, Vd = 48V, Idq = 300mA) 16 70 16 70 14 60 14 60 Eff 2 30 35 40 Pout, Output Power (dBm) 45 10 2 0 0 Drain Eff 10 0 30 50 20 Gain 4 Gain 4 30 6 20 6 40 8 Drain Efficiency (%) 30 8 50 10 Gain (dB) 40 10 Drain Efficiency (%) 50 12 Gain (dB) 12 35 40 Pout, Output Power (dBm) 45 50 IMD3 vs. Pout Gain vs. Pout (2-Tone 1MHz Separaon, Vd = 48V, Idq varied, fc = 2140MHz) (2-Tone 1MHz Separaon, Vd = 48V, Idq varied, fc = 2140MHz) 15.2 -20 -25 14.6 14.4 -30 Gain (dB) IMD3, Intermodulaon Distoron (dBc) 15 14.8 -35 260mA 300mA -40 330mA 370mA -45 1 10 14.2 14 13.8 13.6 260mA 13.4 300mA 13.2 330mA 13 370mA 12.8 1 100 10 100 Pout, Output Power (W-PEP) Pout, Output Power (W-PEP) IMD vs. Output Power (Vd = 48V, Idq = 300mA, f1 = 2139.5MHz, f2 = 2140.5MHz) Intermodulaon Distoron (IMD - dBc) 0 -10 -IMD3 IMD3 -IMD5 IMD5 -IMD7 IMD7 -20 -30 -40 -50 -60 -70 1 DS120306 10 Pout, Output Power (W- PEP) 100 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 5 of 14 RF3933 Typical Performance in Standard 900MHz Tuned Test Fixture (CW, T = 25°C, unless otherwise noted) Gain vs. Output Power (f = 900MHz) Efficiency vs. Output Power (f = 900MHz) (Pulsed 10% duty cycle, 10uS, Vd = 48V, Idq = 300mA) (Pulsed 10% duty cycle, 10uS, Vd = 48V, Idq = 300mA) 25 75 24 70 65 23 60 Drain Efficiency (%) Gain (dB) 22 21 20 19 18 Drain Eff 55 50 45 40 35 30 25 17 20 Gain 15 16 10 15 32 34 36 38 40 42 44 Output Power (dBm) 46 48 50 5 52 30 Input Return Loss vs. Output Power (f = 900MHz) 32 34 36 48 50 52 (Vd = 48V, Idq = 300mA) 0 0 23 -2 Fixed tuned test circuit 22 -4 -2 21 -4 -6 20 -6 -8 19 -8 18 -10 17 -12 -14 16 -14 -16 15 Gain (dB) IRL -10 -12 -18 14 -20 13 30 32 34 36 38 40 42 44 Output Power (dBm) 46 48 50 52 -16 Gain IRL 890 Fixed tuned test circuit 17 -8 16 -10 15 -12 14 -14 -16 IRL 12 73 Drain Efficiency (%) -6 Input Return Loss (dB) -4 18 71 69 67 Eff -18 11 6 of 14 Fixed tuned test circuit -2 19 -20 880 890 900 Frequency (MHz) 920 75 0 Gain 910 (CW, Vd = 48V, Idq = 300mA) 21 13 900 Frequency (MHz) Drain Efficiency vs. Frequency, Pout = 49.5dBm (CW, Vd = 48V, Idq = 300mA) 20 -18 -20 880 Gain/IRL vs. Frequency, Pout = 49.5dBm Gain (dB) 46 Small Signal Performance vs. Frequency, Pout = 30dBm (Pulsed 10% duty cycle, 10uS, Vd = 48V, Idq = 300mA) IRL, Input Return Loss (dB) 38 40 42 44 Output Power (dBm) Input Return Loss (dB) 30 910 920 65 880 890 900 Frequency (MHz) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 910 920 DS120306 Gain/ Efficiency vs. Pout, f = 900MHz (CW, Vd = 48V, Idq = 300mA) (Pulsed 10% duty cycle, 10uS, Vd = 48V, Idq = 300mA) 22 80 23 80 21 70 22 70 20 60 21 60 19 50 20 50 18 40 19 40 17 30 18 30 16 Eff 15 14 30 35 40 45 Pout, Output Power (dBm) 50 Gain (dB) 10 16 0 15 55 20 Drain Eff 10 0 30 35 40 45 Pout, Output Power (dBm) 50 55 IMD3 vs. Pout Gain vs. Pout (2-Tone 1MHz Separaon, Vd = 48V, Idq varied, fc = 900MHz) (2-Tone 1MHz Separaon, Vd = 48V, Idq varied, fc = 900MHz) -20 22 21.8 -25 21.6 21.4 -30 Gain (dB) IMD3, Intermodulaon Distoron (dBc) Gain 17 20 Gain Drain Efficiency (%) Gain/ Efficiency vs. Pout, f = 900MHz Drain Efficiency (%) Gain (dB) RF3933 -35 260mA 10 300mA 330mA 20.2 370mA 1 260mA 20.4 330mA -45 21 20.8 20.6 300mA -40 21.2 370mA 20 100 1 10 Pout, Output Power (W-PEP) 100 Pout, Output Power (W-PEP) IMD vs. Output Power (Vd = 48V, Idq = 300mA, f1 = 899.5MHz, f2 = 900.5MHz) Intermodulaon Distoron (IMD - dBc) 0 -10 -IMD3 IMD3 -IMD5 IMD5 -IMD7 IMD7 -20 -30 -40 -50 -60 -70 1 DS120306 10 Pout, Output Power (W- PEP) 100 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 7 of 14 RF3933 Package Drawing Pin-Out Table Pin 1 8 of 14 Function Description Gate Gate - VG RF Output 2 Drain Drain - VD RF Output 3 Source Source - Ground Base 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS120306 RF3933 Bias Instruction for RF3933 Evaluation Board ESD Sensitive Material. Please use proper ESD precautions when handling devices of evaluation board. Evaluation board requires additional external fan cooling. Connect all supplies before powering up the evaluation board. 1. Connect RF cables at RFIN and RFOUT. 2. Connect ground to the ground supply terminal, and ensure that both the VG and VD grounds are also connected to this ground supply terminal. 3. Apply -8V to VG. 4. Apply 48V to VD. 5. Increase VG until drain current reaches 300mA or desired bias point. 6. Turn on the RF input. DS120306 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 9 of 14 RF3933 2.14GHz Evaluation Board Schematic 9*$7( 9'5$,1 & & & & & & & & & 5 & - 5),1 & VWULS 5) & & & & VWULS - 5)287 & & 2.14GHz Evaluation Board Bill of Materials Component 10 of 14 Value Manufacturer Part Number C1 10pF ATC ATC800A100JT C2, C10, C11, C15 33pF ATC ATC800A330JT C3,C14 0.1F Murata GRM32NR72A104KA01L C4,C13 4.7F Murata GRM55ER72A475KA01L C5 100F Panasonic ECE-V1HA101UP C6 1.5pF ATC ATC800A1R5BT C7, C8 0.5pF ATC ATC800A0R5BT C9 2.7pF ATC ATC800A2R7BT C12 100F Panasonic EEV-TG2A101M C17 1.8pF ATC ATC800A1R8BT C19 1.0pF ATC ATC800A1R0BT R1 10 Panasonic ERJ-8GEYJ100V C16, C18 Not used - - PCB RO4350, 0.030" thick dielectric Rogers - 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS120306 RF3933 2.14GHz Evaluation Board Layout Device Impedances Frequency Z Source () 2110MHz 2.05 - j3.67 Z Load ( 4.8 - j0.08 2140MHz 1.92 - j3.44 4.82 + j0.45 2170MHz 1.88 - j3.11 4.83 + j1.05 Device impedances reported are the measured evaluation board impedances chosen for a tradeoff of efficiency, peak power, and linear performance across the entire frequency bandwidth. DS120306 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 11 of 14 RF3933 900MHz Evaluation Board Schematic 900MHz Evaluation Board Bill of Materials Component 12 of 14 Value Manufacturer Part Number C1, C2, C10, C11 68pF ATC ATC800A680JT C3, C14 0.1F Murata GRM32NR72A104KA01L C4, C13 4.7F Murata GRM55ER72A475KA01L C6 6.8pF ATC ATC800A6R8JT C7 18pF ATC ATC800A180JT C8 12pF ATC ATC800A120JT C9 4.7pF ATC ATC800A4R7BT C12 330F Panasonic EEU-FC2A331 C5 100F Panasonic ECE-V1HA101UP R1 10 Panasonic ERJ-8GEYJ100V 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS120306 RF3933 900MHz Evaluation Board Layout Device Impedances Frequency Z Source () Z Load ( 880MHz 2.05 + j4.09 6.82 + j6.34 900MHz 2.12 + j4.15 7.18 + j5.82 920MHz 1.95 + j3.92 6.93 + j5.42 Device impedances reported are the measured evaluation board impedances chosen for a tradeoff of efficiency, peak power, and linear performance across the entire frequency bandwidth. DS120306 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 13 of 14 RF3933 Device Handling/Environmental Conditions GaN HEMT devices are ESD sensitive materials. Please use proper ESD precautions when handling devices or evaluation boards. GaN HEMT Capacitances The physical structure of the GaN HEMT results in three terminal capacitors similar to other FET technologies. These capacitances exist across all three terminals of the device. The physical manufactured characteristics of the device determine the value of the CDS (drain to source), CGS (gate to source) and CGD (gate to drain). These capacitances change value as the terminal voltages are varied. RFMD presents the three terminal capacitances measured with the gate pinched off (VGS = -8V) and zero volts applied to the drain. During the measurement process, the parasitic capacitances of the package that holds the amplifier is removed through a calibration step. Any internal matching is included in the terminal capacitance measurements. The capacitance values presented in the typical characteristics table of the device represent the measured input (CISS), output (COSS), and reverse (CRSS) capacitance at the stated bias voltages. The relationship to three terminal capacitances is as follows: CISS = CGD + CGS COSS = CGD + CDS CRSS = CGD DC Bias The GaN HEMT device is a depletion mode high electron mobility transistor (HEMT). At zero volts VGS the drain of the device is saturated and uncontrolled drain current will destroy the transistor. The gate voltage must be taken to a potential lower than the source voltage to pinch off the device prior to applying the drain voltage, taking care not to exceed the gate voltage maximum limits. RFMD recommends applying VGS = -5V before applying any VDS. RF Power transistor performance capabilities are determined by the applied quiescent drain current. This drain current can be adjusted to trade off power, linearity, and efficiency characteristics of the device. The recommended quiescent drain current (IDQ) shown in the RF typical performance table is chosen to best represent the operational characteristics for this device, considering manufacturing variations and expected performance. The user may choose alternate conditions for biasing this device based on performance tradeoffs. Mounting and Thermal Considerations The thermal resistance provided as RTH (junction to case) represents only the packaged device thermal characteristics. This is measured using IR microscopy capturing the device under test temperature at the hottest spot of the die. At the same time, the package temperature is measured using a thermocouple touching the backside of the die embedded in the device heatsink but sized to prevent the measurement system from impacting the results. Knowing the dissipated power at the time of the measurement, the thermal resistance is calculated. In order to achieve the advertised MTTF, proper heat removal must be considered to maintain the junction at or below the maximum of 200°C. Proper thermal design includes consideration of ambient temperature and the thermal resistance from ambient to the back of the package including heatsinking systems and air flow mechanisms. Incorporating the dissipated DC power, it is possible to calculate the junction temperature of the device. 14 of 14 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS120306