AlGaAs Invisible Laser Diode ADL-80Y01TX/TZ 2004/05 ver. 1.0 ★ 808nm 200mW 5.6φ TO-Type High Power Laser Diode • Features 1. Standard 5.6φTO-type: easy for design, assembly and integration 2. Low operation current 3. Long operation lifetime, MTTF>10000 hrs 4. Cost effective • Applications 1. Pumps for solid state lasers 2. Miniature low power green laser 3. Medical use • Absolute maximum ratings Parameter Light output power Reverse voltage (LD) Case temperature Storage temperature Symbol Condition PO CW VRL TC TS - Rating 200 2 -10~+50 -40~+75 TX Unit mW V o C o C TZ • Electrical and optical characteristics (Tc=25 oC) Parameter Peak wavelength Threshold current Operating current Operating voltage Differential efficiency Parallel divergence angle Perpendicular divergence angle Emission point accuracy Symbol λ Typ. 808 55 Max. 811 75 Unit nm mA Conditions Ith Min. 805 - Iop - 260 280 mA Po=200mW Vop - 1.7 1.9 V Po=200mW η θ// θ⊥ ΔxΔyΔz 0.8 - 1 9 41 - 15 48 ±80 mW/mA degree degree um Po=150-200mW Po=200mW Po=200mW Precautions 1. Do not operate the device above the maximum rating condition, even momentarily. It may cause unexpected permanent damage to the device. 2. Semiconductor laser device is very sensitive to electrostatic discharge. High voltage spike current may change the characteristics of the device, or malfunction at any time during its service period. Therefore, proper measures for preventing electrostatic discharge are strongly recommended. 3. Effective heat sink can help the device operates under a more relax condition; as a result, a more stable characteristics and better reliability can be achieved. So it is recommended that always apply proper heat sink before the device is operating. 4. Do not look into the laser beam directly by bare eyes. The laser beam may cause severe damage to human eyes. AlGaAs Invisible Laser Diode ADL-80Y01TX/TZ 2004/05 ver. 1.0 L-I Curve vs. Temperature 300 250 80 o Optical Power (mW) o 20 C 30 C o 40 C Threshold Current (mA) o 10 C o 50 C 200 150 100 50 0 0 50 100 150 200 250 Threshold Current vs. Case Temperature 100 300 350 60 40 20 0 10 400 20 Operation Current (mA) Differential Efficiency vs. Case Temperature 830 Oscillation Wavelength (nm) Differential Efficiency (mW/mA) 1.2 1.1 1.0 0.9 0.8 10 20 30 30 40 50 Case Temperature (degree) 40 50 Oscillation Wavelength vs. Case Temperature 820 810 800 790 780 10 20 Case Temperature (degree) 30 40 50 Case Temperature (degree) Power Dependence of Far Field Pattern Power Dependence of Wavelength 12000 10000 Po = 200mW 6000 Intensity Po = 150mW 4000 Po = 100mW 2000 0 Po = 50mW -30 -20 -10 0 Angle (degree) 10 20 30 790 795 800 805 810 Oscillation Wavelength (nm) 815 820 Intensity 8000