RUICHIPS RU6888R

RU6888
N-Channel Advanced Power MOSFET
MOSFET
Features
Pin Description
• 68V/88A,
RDS (ON) =6.0mΩ (Type) @ VGS=10V
• Ultra Low On-Resistance
TO-220
TO-220F
TO-263
TO-247
• Exceptional dv/dt capability
• Fast Switching and Fully Avalanche Rated
• 100% avalanche tested
• 175°C Operating Temperature
• Lead Free and Green Available
Applications
• Switching Application Systems
• Inverter Systems
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
68
VGSS
Gate-Source Voltage
±25
Maximum Junction Temperature
175
°C
-55 to 175
°C
TC=25°C
88
A
TC=25°C
320
A
TJ
TSTG
IS
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP
300μs Pulse Drain Current Tested
ID
Continuous Drain Current
PD
Maximum Power Dissipation
RθJC
Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
EAS
Avalanche Energy, Single Pulsed
Copyright Ruichips Semiconductor Co., Ltd
Rev. A – SEP., 2009
TC=25°C
V
①
TC=100°C
88
65
TC=25°C
130
TC=100°C
70
A
W
0.6
°C/W
400
mJ
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RU6888
Electrical Characteristics
Symbol
(TA=25°C Unless Otherwise Noted)
Parameter
Test Condition
RU6888
Min.
Typ.
Max.
Unit
Static Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VGS(th)
IGSS
RDS(ON)
②
VGS=0V, IDS=250µA
V
68
VDS= 68V, VGS=0V
1
TJ=85°C
Gate Threshold Voltage
VDS=VGS, IDS=250µA
Gate Leakage Current
VGS=±25V, VDS=0V
Drain-Source On-state Resistance
VGS= 10V, IDS=35A
30
2
3
6
µA
4
V
±100
nA
8
mΩ
Diode Characteristics
VSD
②
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ISD=20 A, VGS=0V
ISD=40A, dlSD/dt=100A/µs
0.84
V
49
ns
93
nC
1.4
Ω
③
Dynamic Characteristics
RG
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(ON)
Turn-on Delay Time
tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
tf
VGS=0V,
VDS= 30V,
Frequency=1.0MHz
2900
340
pF
200
13
VDD=30V, RL=30Ω,
IDS= 1A, VGEN= 10V,
RG=8Ω
Turn-off Fall Time
15
ns
29
55
③
Gate Charge Characteristics
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Notes:
65
VDS=30V, VGS= 10V,
IDS=40A
12
nC
21
①Current limited by wire bond.
②Pulse test ; Pulse width≤300µs, duty cycle≤2%.
③Guaranteed by design, not subject to production testing.
Copyright Ruichips Semiconductor Co., Ltd
Rev. A – SEP., 2009
2
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RU6888
Typical Characteristics
Drain Current
Ptot - Power (W)
ID - Drain Current (A)
Power Dissipation
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
ID - Drain Current (A)
Normalized Effective Transient
Thermal Transient Impedance
VDS - Drain-Source Voltage (V)
Copyright Ruichips Semiconductor Co., Ltd
Rev. A – SEP., 2009
Square Wave Pulse Duration (sec)
3
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RU6888
Typical Characteristics
Drain-Source On Resistance
ID - Drain Current (A)
RDS(ON) - On Resistance (mΩ)
Output Characteristics
VDS - Drain-Source Voltage (V)
ID - Drain Current (A)
Gate Threshold Voltage
RDS(ON) - On - Resistance (m)
Normalized Threshold Voltage
Drain-Source On Resistance
VGS - Gate-Source Voltage (V)
Copyright Ruichips Semiconductor Co., Ltd
Rev. A – SEP., 2009
Tj - Junction Temperature (°C)
4
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RU6888
Typical Characteristics
Source-Drain Diode Forward
IS - Source Current (A)
Normalized On Resistance
Drain-Source On Resistance
Tj - Junction Temperature (°C)
VSD - Source-Drain Voltage (V)
Gate Charge
C - Capacitance (pF)
VGS - Gate-Source Voltage (V)
Capacitance
VDS - Drain-Source Voltage (V)
Copyright Ruichips Semiconductor Co., Ltd
Rev. A – SEP., 2009
QG - Gate Charge (nC)
5
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RU6888
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
Copyright Ruichips Semiconductor Co., Ltd
Rev. A – SEP., 2009
6
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RU6888
Ordering and Marking Information
RU6888
Package (Available)
R : TO-220;
S: TO-263 ;
P: TO-220F;
Q: TO-247
Operating Temperature Range
C : -55 to 175 ºC
Assembly Material
G : Green & Lead Free
Packaging
T : TUBE
TR : Tape & Reel
Copyright Ruichips Semiconductor Co., Ltd
Rev. A – SEP., 2009
7
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RU6888
Package Information
TO-220FB-3L
SYMBOL
MM
INCH
MM
SYMBOL
INCH
MIN
NOM
MAX
MIN
NOM
MAX
A
4.40
4.57
4.70
0.173
0.180
0.185
Øp1
MIN
NOM
MAX
MIN
NOM
MAX
1.40
1.50
1.60
0.055
0.059
A1
1.27
1.30
1.33
0.050
0.051
0.052
e
0.063
A2
2.35
2.40
2.50
0.093
0.094
0.098
e1
b
0.77
-
0.90
0.030
-
0.035
H1
6.40
6.50
6.60
0.252
0.256
0.260
b2
1.23
-
1.36
0.048
-
0.054
L
12.75
-
13.17
0.502
-
0.519
-
-
3.95
-
-
0.156
2.54BSC
0.1BSC
5.08BSC
0.2BSC
C
0.48
0.50
0.52
0.019
0.020
0.021
L1
D
15.40
15.60
15.80
0.606
0.614
0.622
L2
D1
9.00
9.10
9.20
0.354
0.358
0.362
Øp
3.57
3.60
3.63
0.141
0.142
0.143
DEP
0.05
0.10
0.20
0.002
0.004
0.008
Q
2.73
2.80
2.87
0.107
0.110
0.113
E
9.70
9.90
10.10
0.382
0.389
0.398
θ1
5°
7°
9°
5°
7°
9°
E1
-
8.70
-
-
0.343
-
θ2
1°
3°
5°
1°
3°
5°
E2
9.80
10.00
10.20
0.386
0.394
0.401
2.50REF.
0.098REF.
ALL DIMENSIONS REFER TO JEDEC STANDARD
DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS
Copyright Ruichips Semiconductor Co., Ltd
Rev. A – SEP., 2009
8
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RU6888
TO-263-2L
SYMBOL
MM
INCH
MM
MIN
NOM
MAX
MIN
NOM
MAX
SYMBOL
INCH
MIN
NOM
MAX
MIN
NOM
MAX
A
4.40
4.57
4.70
0.173
0.180
0.185
L
2.00
2.30
2.60
0.079
0.090
0.102
A1
0
0.10
0.25
0
0.004
0.010
L3
1.17
1.27
1.40
0.046
0.050
0.055
A2
2.59
2.69
2.79
0.102
0.106
0.110
L1
-
-
1.70
-
-
0.067
b
0.77
-
0.90
0.030
-
0.035
L4
0.25BSC
0.01BSC
b1
1.23
-
1.36
0.048
-
0.052
L2
2.50REF.
0.098REF.
c
0.34
-
0.47
0.013
-
0.019
θ
0°
-
8°
0°
-
8°
C1
1.22
-
1.32
0.048
-
0.052
θ1
5°
7°
9°
5°
7°
9°
D
8.60
8.70
8.80
0.338
0.343
0.346
θ2
1°
3°
5°
1°
3°
5°
E
10.00
10.16
10.26
0.394
0.4
0.404
DEP
0.05
0.10
0.20
0.002
0.004
0.008
Øp1
1.40
1.50
1.60
0.055
0.059
0.063
15.50
0.579
e
H
2.54BSC
14.70
15.10
0.1BSC
0.594
0.610
ALL DIMENSIONS REFER TO JEDEC STANDARD
DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS
Copyright Ruichips Semiconductor Co., Ltd
Rev. A – SEP., 2009
9
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RU6888
TO-220F-3L
SYMBOL
MM
INCH
MM
MIN
NOM
MAX
MIN
NOM
MAX
SYMBOL
MIN
NOM
INCH
MAX
MIN
NOM
MAX
E
9.96
10.16
10.36
0.392
0.400
0.408
Øp3
-
3.450
-
-
0.136
-
A
4.50
4.70
4.90
0.177
0.185
0.193
θ1
5°
7°
9°
5°
7°
9°
A1
2.34
2.54
2.74
0.092
0.100
0.108
θ2
-
45°
-
-
45°
-
A2
0.95
1.05
1.15
0.037
0.041
0.045
DEP
0.05
0.10
0.15
0.002
0.004
0.006
A3
0.42
0.52
0.62
0.017
0.020
0.024
F1
1.90
2.00
2.10
0.075
0.079
0.083
A4
2.65
2.75
2.85
0.104
0.108
0.112
F2
13.61
13.81
14.01
0.536
0.544
0.552
c
-
0.50
-
-
0.020
-
F3
3.20
3.30
3.40
0.126
0.130
0.134
D
15.67
15.87
16.07
0.617
0.625
0.633
G
3.25
3.45
3.65
0.128
0.136
0.144
Q
8.80
9.00
9.20
0.346
0.354
0.362
G1
5.90
6.00
6.10
0.232
0.236
0.240
H1
6.48
6.68
6.88
0.255
0.263
0.271
G2
6.90
7.00
7.10
0.272
0.276
0.280
b1
1.17
1.20
0.046
0.047
0.048
b2
0.77
0.8
0.85
0.030
0.031
0.033
e
2.54BSC
0.1BSC
Øp
-
3.183
-
-
0.125
-
1.24
L
12.78
12.98
13.18
0.503
0.511
0.519
b3
1.10
1.30
1.50
0.043
0.051
0.059
D1
8.99
9.19
9.39
0.354
0.362
0.370
E1
9.8
10.00
10.20
0.386
0.394
0.412
Øp1
1.40
1.50
1.60
0.055
0.059
0.063
K1
0.75
0.8
0.85
0.030
0.031
0.033
Øp2
1.15
1.20
1.25
0.045
0.047
0.049
ALL DIMENSIONS REFER TO JEDEC STANDARD
DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS
Copyright Ruichips Semiconductor Co., Ltd
Rev. A – SEP., 2009
10
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RU6888
TO-247
SYMBOL
MM
INCH
MM
SYMBOL
MIN
INCH
MIN
MAX
MIN
MAX
A
4.850
5.150
0,191
0.200
E2
MAX
A1
2.200
2.600
0.087
0.102
L
40.900
41.300
1.610
1.626
3.600 REF
MIN
MAX
0.142 REF
B
1.000
1.400
0.039
0.055
L1
24.800
25.100
0.976
0.988
b1
2.800
3.200
0.110
0.126
L2
20.300
20.600
0.799
0.811
b2
1.800
2.200
0.071
0.087
Φ
7.100
7.300
0.280
0.287
c
0.500
0.700
0.020
0.028
e
5.450 TYP
0.215 TYP
c1
1.900
2.100
0.075
0.083
H
5.980 REF.
0.235 REF.
D
15.450
15.750
0.608
0.620
h
E1
3.500 REF.
0.000
0.300
0.000
0.012
0.138 REF.
ALL DIMENSIONS REFER TO JEDEC STANDARD
DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS
Copyright Ruichips Semiconductor Co., Ltd
Rev. A – SEP., 2009
11
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RU6888
Customer Service
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Copyright Ruichips Semiconductor Co., Ltd
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12
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